BSB028N06NN3G INFINEON | Alldatasheet
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Technical content
Industrial & Multimarket Data Sheet 1.3, 2011-03-01 Preliminary OptiMOS™ BSB028N06NN3 G n-Channel Power MOSFET
OptiMOS™ Power-MOSFET BSB028N06NN3 G Preliminary Data Sheet 1 1.3, 2011-03-01
1 Description
OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 60V the best choice for the demanding requirements of switched mode power supplies in Servers, Datacom and Telecom applications but also for motor drives. With almost no parasitic package inductances, the CanPAK allows best controllability of the gate in highly dynamic switchin g enviroments. This package in addition features best cooling capability through top-side cooling of the metal can. Hence, this packaging technology combined wit h the OptiMOS silicon enables highest efficiency levels while having mininal space requirements at the same time.
Features
- Optimized technology for DC/DC converters
- 100% avalanche tested
- Excellent Q g x RDS(on) product (FOM)
- Qualified according to JEDEC 1) for target applications
- Superior thermal resistance
- Pb-free plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- Double sided cooling
- Compatible with DirectFET® pack age MN footprint and outline
- N-channel, normal level
- Low parasitic inductance
- Low profile (<0.7 mm)
Applications
- DC/DC converters
- Synchronous rectification
- Power distribution
- Motor drive applications 1) J-STD20 and JESD22 2) DirectFET ® is a trademark of Inte rnational Rectifier Corporation. BSB028N06NN3 G uses DirectFET ® technology licensed from International Rectifier Corporation Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 60 V IFX OptiMOS webpage RDS(on),max 2.8 m Ω IFX OptiMOS product brief ID 90 A IFX OptiMOS spice models QOSS 87 nC IFX Design tools Qg.typ 108 Type Package Marking BSB028N06NN3 G MG-WDSON-2 0106
OptiMOS™ Power-MOSFET BSB028N06NN3 G Preliminary Data Sheet 2 1.3, 2011-03-01
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current ID -- 9 0 A VGS=10 V, TC=25 °C
85 VGS=10 V, TC=100 °C
22 VGS=10 V, TA=25 °C,
RthJA=58 K/W)1) 1) DirectFET ® is a trademark of Inter national Rectifier Corporation. BSB028N06NN3 G uses DirectFET ® technology licensed from International Rectifier Corporation Pulsed drain current2) 2) See figure 3 for more detailed information ID,pulse -- 3 6 0 TC=25 °C Avalanche energy, single pulse EAS -- 5 9 0 m J ID=30 A,RGS=25 Ω Gate source voltage VGS -20 - 20 V Power dissipation Ptot -- 7 8 W TC=25 °C
2.2 TA=25 °C, RthJA=583) K/W
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Operating and storage temperature Tj,Tstg -40 - 150 °C IEC climatic category; DIN IEC 68-1 55 150 56 Ncm Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - 1.0 - °K/W bottom -1 . 6 - t o p Device on PCB RthJA -- 5 8 6 c m 2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (o ne layer, 70µ, thick) copper area for drain conneciton. PCB is vertical in still air.
OptiMOS™ Power-MOSFET BSB028N06NN3 G
Electrical characteristics
Preliminary Data Sheet 3 1.3, 2011-03-01
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0 V, ID=1 mA Gate threshold voltage VGS(th) 23 4 VDS=VGS, ID=102 µA Zero gate voltage drain current IDSS -0 . 1 1 0 µ A VDS=60V, VGS=0 V, Tj=25 °C - 10 100 VDS=60 V, VGS=0 V, Tj=125 °C Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) -2 . 2 2 . 8 m Ω VGS=10 V, ID=30A Gate resistance RG -0 . 5 - Ω Transconductance gfs 42 83 S | VDS|>2|ID|RDS(on)max, ID=30 A Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 8800 12000 pF VGS=0 V, VDS=30 V, f=1 MHzOutput capacitance Coss - 2100 2800 Reverse transfer capacitance Crss -6 4 - Turn-on delay time td(on) -2 1 - n s VDD=30V, VGS=10 V, ID=30 A, RG=1 . 6 ΩRise time tr -9- Turn-off delay time td(off) -3 8 - Fall time tf -6-
OptiMOS™ Power-MOSFET BSB028N06NN3 G Preliminary Data Sheet 4 1.3, 2011-03-01 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -4 1 - n C VDD=30 V, ID=30 A, VGS=0 to 10 V Qgd 8 Gate to drain charge Qsw -2 3 - Switching charge Qg - 108 143 Gate charge total Vplateau -4 . 6 - V Output charge Qoss 87 116 nC VDD=30 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode continuous forward current Is 30 A TC=25 °C Diode pulse current IS,pulse 120 Diode forward voltage VSD -0 . 8 1 . 2 V VGS=0 V, IF=30 A, Tj=25 °C Reverse recovery charge Qrr -8 7 - n C VR=30V, IF=Is, diF/dt=100 A/µsReverse recovery time t rr -6 0 - n s
OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Preliminary Data Sheet 5 1.3, 2011-03-01
5 Electrical characteristics diagrams
1 Power dissipation 2 Drain current
Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T
OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Preliminary Data Sheet 6 1.3, 2011-03-01 Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Preliminary Data Sheet 7 1.3, 2011-03-01 Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj
OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Preliminary Data Sheet 8 1.3, 2011-03-01 Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
OptiMOS™ Power-MOSFET BSB028N06NN3 G Package outlines Preliminary Data Sheet 9 1.3, 2011-03-01
6 Package outlines
Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET BSB028N06NN3 G Package outlines Preliminary Data Sheet 10 1.3, 2011-03-01
7 Package outlines
Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET BSB028N06NN3 G Package outlines Preliminary Data Sheet 11 1.3, 2011-03-01
8 Package outlines
Figure 3 Dimensions in mm/ Recomended stencil thikness 150µm
OptiMOS™ Power-MOSFET BSB028N06NN3 G
Revision History
Preliminary Data Sheet 12 1.3, 2011-03-01
9 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-03-01 Published by Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. Life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2011-03-01, 1.3 Previous Revision: Revision Subjects (major ch anges since last revision)