BSB008NE2LX INFINEON | Alldatasheet

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Technical content

Industrial & Multimarket Data Sheet 0.2, 2010-07-28 Target OptiMOS™ BSB008NE2LX n-Channel Power MOSFET

OptiMOS™ Power-MOSFET BSB008NE2LX Target Data Sheet 1 0.2, 2010-07-28

1 Description

OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requiremen ts of the sharpened next generation voltage regulation standards in computing applications

Features

  • Optimized for e-fuse and OR-ing application
  • 100% avalanche tested
  • Ultra low R DS(on) in CanPAK-MX footprint
  • Qualified according to JEDEC 1) for target applications
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • Double.sided cooling
  • Compatible with DirectFET® pa ckage MX footprint and outline
  • 1 0 0 % R g T e s t e d
  • Low profile (<0.7 mm)

Applications

  • On board power for server
  • Power managment for high performance computing
  • Synchronous rectification
  • High power density point of load converters 1) J-STD20 and JESD22 2) CanPAK uses DirectFET ® technology licensed from Internat ional Rectifier Corporation. DirectFET ® is a registered trademark of International Rectifier Corporation. Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 25 V IFX OptiMOS webpage RDS(on),max 0.8 m Ω IFX OptiMOS product brief ID 180 A IFX OptiMOS spice models QOSS 74 nC IFX Design tools Qg.typ 240 Type Package Marking BSB008NE2LX MG-WDSON-2 tbd

OptiMOS™ Power-MOSFET BSB008NE2LX Target Data Sheet 2 0.2, 2010-07-28

2 Maximum ratings

at Tj = 25 °C, unless otherwise specified.

3 Thermal characteristics

Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current ID -- 1 8 0 A VGS=10 V, TC=25 °C

170 VGS=10 V, TC=100 °C

47 VGS=10 V, TA=25 °C,

RthJA=45 K/W Pulsed drain current1) 1) See figure 3 for more detailed information ID,pulse -- 4 0 0 TC=25 °C Avalanche current, single pulse2) 2) See figure 13 for mo re detailed information IAS -- 4 0 Avalanche energy, single pulse EAS -- 2 9 0 m J ID=40 A,RGS=25 Ω Gate source voltage VGS -20 - 20 V Power dissipation Ptot -- 8 9 W TC=25 °C

2.8 TA=25 °C, RthJA=45 K/W

Operating and storage temperature Tj,Tstg -40 - 150 °C IEC climatic category; DIN IEC 68-1 55 150 56 Ncm Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - 1.0 - °K/W bottom 1.4 top Device on PCB RthJA -- 4 5 6 c m 2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (o ne layer, 70µ, thick) copper area for drain conneciton. PCB is vertical in still air.

OptiMOS™ Power-MOSFET BSB008NE2LX

Electrical characteristics

Target Data Sheet 3 0.2, 2010-07-28

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0 V, ID=1 mA Gate threshold voltage VGS(th) 1- 2 . 2 VDS=VGS, ID=250 µA Zero gate voltage drain current IDSS -0 . 1 1 0 µ A VDS=25 V, VGS=0 V, Tj=25 °C - 10 100 VDS=25 V, VGS=0 V, Tj=125 °C Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) -0 . 7 5 1 . 0 m Ω VGS=4.5 V, ID=25A -0 . 6 0 . 8 VGS=10 V, ID=30 A Gate resistance RG -0 . 5 - Ω Transconductance gfs 120 240 S | VDS|>2|ID|RDS(on)max, ID=30 A Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 13000 - pF VGS=0 V, VDS=12 V, f=1 MHzOutput capacitance Coss -4 3 0 0 - Reverse transfer capacitance Crss -3 3 0 0 - Turn-on delay time td(on) -t b d - n s VDD=12V, VGS=10 V, ID=30 A, RG=1 . 6 ΩRise time tr -t b d - Turn-off delay time td(off) -t b d - Fall time tf -t b d -

OptiMOS™ Power-MOSFET BSB008NE2LX Target Data Sheet 4 0.2, 2010-07-28 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -3 0 - n C VDD=12 V, ID=30 A, VGS=0 to 4.5 V Gate charge at threshold Qg(th) -2 1 - Gate to drain charge Qgd -6 5 - Switching charge Qsw -7 4 - Gate charge total Qg - 137 8.1 Gate plateau voltage Vplateau -2 . 2 - V Gate charge total Qg -2 4 0 - n C VDD=12 V, ID=30 A, VGS=0 to 10V Gate charge total, sync. FET Qg(sync) -8 3 - VDS=0.1 V, VGS=0 to 4.5 V Output charge Qoss 75 VDD=12 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode continuous forward current Is -- 8 9 A TC=25 °C Diode pulse current IS,pulse -- 4 0 0 Diode forward voltage VSD -0 . 7 8 - V VGS=0 V, IF=30 A, Tj=25 °C Reverse recovery charge Qrr -- t b d n C VR=15 V, IF=Is, diF/dt=400 A/µs

OptiMOS™ Power-MOSFET BSB008NE2LX Electrical characteristics diagrams Target Data Sheet 5 0.2, 2010-07-28

5 Electrical characteristics diagrams

1 Power dissipation 2 Drain current

Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T

OptiMOS™ Power-MOSFET BSB008NE2LX Electrical characteristics diagrams Target Data Sheet 6 0.2, 2010-07-28 Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C

OptiMOS™ Power-MOSFET BSB008NE2LX Electrical characteristics diagrams Target Data Sheet 7 0.2, 2010-07-28 Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj

OptiMOS™ Power-MOSFET BSB008NE2LX Electrical characteristics diagrams Target Data Sheet 8 0.2, 2010-07-28 Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15

15 Drain-source breakdown voltage 16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

OptiMOS™ Power-MOSFET BSB008NE2LX Package outlines Target Data Sheet 9 0.2, 2010-07-28

6 Package outlines

Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET BSB008NE2LX Package outlines Target Data Sheet 10 0.2, 2010-07-28

7 Package outlines

Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET BSB008NE2LX Package outlines Target Data Sheet 11 0.2, 2010-07-28

8 Package outlines

Figure 3 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET BSB008NE2LX

Revision History

Target Data Sheet 12 0.2, 2010-07-28

9 Revision History

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2010-07-28 Published by Infineon Technologies AG

81726 Munich, Germany

© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. Life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2010-07-28, 0.2 Previous Revision: Revision Subjects (major ch anges since last revision)

0.2 Release of Target data sheet

t