BS870
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 5
Technical content
Document number: DS11302 Rev. 21 - 2 1 of 5 www.diodes.com December 2019 © Diodes Incorporated BS870 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max 60V 5Ω @ VGS = 10V 250mA Description and Applications This MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions Backlighting Logic Level Gate Drive Switching Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Notes 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Complaint Part is Available Under Separate Datasheet (BS870Q) Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging BS870-7-F SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 1998 … 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code J … G H I J K L M N O P Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View K70 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Internal Schematic Top View SOT23 D S G D G S
Document number: DS11302 Rev. 21 - 2 2 of 5 www.diodes.com December 2019 © Diodes Incorporated BS870 Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS 1.0M VDGR 60 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 5) Continuous ID 250 mA Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient RJA 417 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 60 80 — V VGS = 0V, ID = 100A Zero Gate Voltage Drain Current IDSS — — 0.5 µA VDS = 25V, VGS = 0V Gate-Body Leakage IGSS — — 10 nA VGS = 15V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 1.0 2.0 3.0 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance RDS(ON) — 3.5 5.0 VGS = 10V, ID = 0.2A On-State Drain Current ID(ON) 0.5 1.0 — A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 — — ms VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss — 22 50 pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 11 25 pF Reverse Transfer Capacitance Crss — 2.0 5.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) — 2.0 20 ns VES = 10V, RL = 150, VDS = 10V, RD = 100 Turn-Off Delay Time tD(OFF) — 5.0 20 ns Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect.
Document number: DS11302 Rev. 21 - 2 3 of 5 www.diodes.com December 2019 © Diodes Incorporated BS870 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DS I DRAIN-SOURCE CURRENT (A)D, 0 0.2 R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current D 0.4 0.6 0.8 1.0 0.5 1.0 1.5 2.0 -55 -30 -5 20 45 70 95 120 145 R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance vs. Junction Temperature j ° V , GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage GS 0 2 4 6 8 10 12 14 16 18 R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE DS(ON) 100 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE ( 癈) Fig. 5 Max Power Dissipation vs. Ambient Temperature A 150 200 250 300 350 400 (°C) () () TJ, TJ = 25°C ()
Document number: DS11302 Rev. 21 - 2 4 of 5 www.diodes.com December 2019 © Diodes Incorporated BS870 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C
Document number: DS11302 Rev. 21 - 2 5 of 5 www.diodes.com December 2019 © Diodes Incorporated BS870 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may b e pr ovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com