BS850 DIODES | Alldatasheet
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Characteristic Symbol Value Unit Drain-Source Voltage –VDSS 60 V Drain-Gate Voltage –VDGS 60 V Gate-Source Voltage (pulsed) VGS ±20 V Drain Current (continuous) –ID 250 mA Power Dissipation @TC = 25°C (Note 1) Pd 310 mW Operating and Storage Temperature Range Tj,T STG -65 to+150 °C Characteristic Symbol Value Unit Maximum Forward Current (continuous) IF 0.30 A Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.12A, Tj = 25°C VF 0.85 V Maximum Ratings @ TA = 25°C unless otherwise specified Inverse Diode @ TA = 25°C unless otherwise specified Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm 2 area. A E J L M B C H G D K TOP VIEW D SG SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm DISCONTINUED, FOR NEW DESIGN USE BSS84
DS11402 Rev. F-3 2 of 3 BS850 Electrical Characteristics @ TA = 25°C unless otherwise specified Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5 cm 2 area. Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage -V(BR)DSS 60 90 — V -ID = 100µA, VGS = 0 Gate Threshold Voltage VGS(th) — 1.0 3.0 V -VGS =V DS, –ID = 1.0mA Gate-Body Leakage Current -IGSS — — 10 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS — — 0.5 µA -VDS = 25V, VGS = 0 Drain-Source ON Resistance rDS (ON) — 3.5 5.0 /c87-VGS = 10V, –ID = 0.2A Thermal Resistance, Junction to Ambient Air R/c113JA — — 400 K/W Note 1 Thermal Resistance Junction to Substrate Backside R/c113JSB — — 320 K/W Note 1 Forward Transconductance gFS — 200 — m m -VDS = 10V, –ID = 0.2A, f = 1.0MHz Input Capacitance Ciss —6 0—p F -VDS = 10V, VGS=0, f = 1.0MHz Switching Times Turn On Time Turn Off Time t on toff — 5.0 25 —n s -VGS = 10V, –VDS = 10V, RD = 100/c87 DISCONTINUED, FOR NEW DESIGN USE BSS84
DS11402 Rev. F-3 3 of 3 BS850 0 500 -I , DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current D g , FORWARD TRANSCONDUCT ANCE (mm) fs 100 200 300 400 500 200 300100 400 Pulse test width 80 s; pulse duty factor 1% -V = 10VDS 0 100 200 T , AMBIENT TEMPERATURE ( C) Fig. 1. Power Deratin g Curve A P , POWER DISSIP ATION (W) d 0.1 0.2 0.3 0.4 0.5 (See Note 1) 01 0 -V , GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage GS g , FORWARD TRANSCONDUCT ANCE (mm) fs 100 200 300 400 500 4 62 8 -V = 10VDS Pulse test width 80 s; pulse duty factor 1% 0 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics DS -I (ON), DRAIN SOURCE ON CURRENT (A) D 0.2 0.4 0.6 0.8 40 6020 80 -V = 6VGS T = 25 CA Pulse test width 80 s; pulse duty factor 1% 0 10 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics DS -I (ON), DRAIN SOURCE ON-CURRENT (mA D 100 200 300 400 500 4 62 8 -V = 5VGS 3.5V 3.0V T= 2 5 CA 4.0V 4.5V Pulse test width 80 s; pulse duty factor 1% 0 10 -V , GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage GS -I , DRAIN CURRENT (A) D 0.2 0.4 0.6 0.8 1.0 4 62 8 Pulse test width 80 s; pulse duty factor 1% T = 25 CA -V = 10VDS DISCONTINUED, FOR NEW DESIGN USE BSS84