BS817 DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
/c183Case: SOT-23, Plastic /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections (see Diagram) /c183Marking: S17 /c183Weight: 0.008 grams (approx.) Mechanical Data Maximum Ratings @ TA = 25°C unless otherwise specified Notes: 1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm 2 area. 2. Pulse Test: Pulse width = 80µs, duty cycle = 1%. /c183High Breakdown Voltage /c183High Input Impedance /c183Fast Switching Speed /c183Specially Suited for Telephone Subsets /c183Ideal for Automated Surface Mount Assembly Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage -VDSS 200 V Drain-Gate Voltage -VDGS 200 V Gate-Source Voltage (pulsed) (Note 2) VGS ±20 V Drain Current (continuous) -ID 100 mA Power Dissipation @ TC = 50°C (Note 1) Pd 310 mW Operating and Storage Temperature Range Tj,T STG -55 to +150 °C Characteristic Symbol Value Unit Max Forward Current (continuous) IF 0.3 A Forward Voltage Drop (typical) GS = 0, IF = 0.3A, Tj = 25°C VF 0.85 V A E J L M B C H G D K TOP VIEW D S G SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm
DS11401 Rev. D-3 2 of 2 BS817 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage -V(BR)DSS 200 230 — V -ID = 100µA, VGS = 0 Gate-Body Leakage Current -IGSS — — 10 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS -IDSX —— 30 1.0 nA µA DS = 130V, VGS = 0 -VDS = 70V, -VGS = 0.2V Gate-Source Threshold Voltage -VGS(th) — 2.8 3.5 V -VGS =V DS, -ID = 1.0mA Drain-Source ON Resistance rDS(ON) —3 05 0 /c87 -VGS = 2.8V, -ID = 20mA Thermal Resistance, Junction to Substrate Backside R/c113JSB — — 320 K/W Note 1 Thermal Resistance, Junction to Ambient Air R/c113JA — — 400 K/W Note 1 Input Capacitance Output Capacitance Feedback Capacitance C iss Coss Crss 8.0 1.5 —p F -V DS = 20V, VGS = 0, f = 1.0MHz Switching Times Turn-On Time Turn-Off Time t ON tOFF — 5.0 15 — ns -VGS = 10V, -VDS = 10V, RD = 100/c87 Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm 2 area. 2. Pulse test: Pulse width = 80µs, duty cycle = 1%. 100 200 300 400 500 0 100 200 POWER DISSIP AT ION (mW) d T , SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Derating Curve SB See Note 1 100 01 0 2 0-V ,DRAIN-S OURCE ON-RESIST ANCE (W) DS(0N) -V , GATE-SOURCE VOLTAGE (VOLTS) Fig. 2, Drain-Source Resistance vs Gate-Source Voltag e GS -V = 0.1VDS T = 25 CA