BS807 DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm 2 area. 2. Pulse test: Pulse width = 80µs, duty cycle = 1%. /c183High Breakdown Voltage /c183High Input Impedance /c183Fast Switching Speed /c183Specially Suited for Telephone Subsets /c183Ideal for Automated Surface Mount Assembly Characteristic Symbol Value Unit Max Forward Current (continuous) IF 0.3 A Forward Voltage Drop (typ) GS = 0, IF = 0.3A, Tj = 25°C VF 0.85 V Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 200 V Drain-Gate Voltage VDGS 200 V Gate-Source Voltage (pulsed) (Note 2) VGS ±20 V Drain Current (continuous) ID 100 mA Power Dissipation @ TC = 50°C (Note 1) Pd 310 mW Operating and Storage Temperature Range Tj,T STG -55 to +150 °C /c183Case: SOT-23, Plastic /c183Terminals: Solderable per MIL-STD-202 Method 208 /c183Pin Connection: See Diagram /c183Marking: S07 /c183Weight: 0.008 grams (approx.) Mechanical Data Maximum Ratings @ TA = 25°C unless otherwise specified A E J L M B C H G D K TOP VIEW D S G SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm
DS11301 Rev. D-3 2 of 3 BS807
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage V(BR)DSS 200 230 — V ID = 100µA, VGS = 0 Gate-Body Leakage Current IGSS — — 10 nA VGS = 15V, VDS = 0 Drain-Source Cutoff Current IDSS IDSX —— 30 1.0 nA µA V DS = 130V, VGS =0 VDS = 70V, VGS = 0.2V Gate-Source Threshold Voltage VGS(th) — 1.8 3.0 V VGS =V DS, ID = 1.0mA Drain-Source ON Resistance rDS(ON) —1 82 8 /c87 VGS = 2.8V, ID = 20 mA Thermal Resistance, Junction to Substrate Backside R/c113JSB — — 320 K/W Note 1 Thermal Resistance, Junction to Ambient Air R/c113JA — — 400 K/W Note 1 Input Capacitance Output Capacitance Feedback Capacitance C iss Coss Crss 8.0 1.5 —p F V DS = 20V,VGS = 0,f = 1.0 MHz Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm 2 area. 2. Pulse test: Pulse width = 80µs, duty cycle = 1%. @ TA = 25°C unless otherwise specified
DS11301 Rev. D-3 3 of 3 BS807 100 200 300 400 0 20 40 60 80 100 I ,DRAIN ON-CURRENT (mA) D(ON) V , DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics DS T = 25 CA V= 4 VGS 3.5 2.5 See Note 2 100 200 300 400 024 68 1 0 I ,DRAIN ON-CURRENT (mA) D(ON) V , DRAIN-SOURCE VOLTAGE (V) Fig. 3, Saturation Characteristics DS T = 25 CA V= 4 VGS 3.5 2.5 See Note 2 0.2 0.4 0.6 0.8 1.0 012 34 5 I ,DRAIN CURRENT (A) D V , GATE-SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate-Source Volta ge GS V = 25VDS T = 25 CA See Note 2 100 200 300 400 012 3 4 5 g ,TRANSCONDUCT ANCE (mm) fs V , GATE-SOURCE VOLTAGE (V) Fig. 5, Transconductance vs Gate-Source Volta ge GS V = 25VDS See Note 2 100 200 300 400 500 0 100 200 P ,POWER DISSIP ATION (mW) d T , SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Deratin g Curve SB See Note 1 100 200 300 400 0 100 200 g ,TRANSCONDUCT ANCE (mm) fs I , DRAIN CURRENT (mA) Fig. 6, Transconductance vs Drain Current D V = 25VDS See Note 2