BS250F

BS250F ZETEX | Alldatasheet

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SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 PARTMARKING DETAIL – MX ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -45 V Continuous Drain Current at T amb=25°C I D -90 mA Pulsed Drain Current I DM -1.6 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -45 -70 V ID=-100µ A, VGS=0V Gate-Source Threshold Voltage VGS(th) -1 -3.5 V I D=-1mA, VDS= VGS Gate-Body Leakage I GSS -20 nA V GS=-15V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5. µ A VDS=-25V, VGS=0V Static Drain-Source On-State Resistance (1) RDS(on) 91 4 Ω VGS=-10V,ID=-200mA Forward Transconductance (1)(2) gfs 90 mS V DS=-10V,ID=-200mA Input Capacitance (2) C iss 25 pF V DS=-10V, VGS=0V, f=1MHz Turn-On Delay Time (2)(3) t d(on) 10 ns VDD ≈-25V, ID=-200mARise Time (2)(3) t r 10 ns Turn-Off Delay Time (2)(3) t d(off) 10 ns Fall Time (2)(3) t f 10 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device BS250F D G S SOT23 3 - 55

VDS - Drain Source Voltage (Volts) ID - Drain Current (Amps) -0.8 -0.6 -0.4 -0.2 -1.0 Transfer Characteristics Normalised RDS(on) and VGS(th)vs Temperature Junction Temperature (°C) Normalised RDS(on)and VGS(th) -40 -20 0 20 40 60 80 120100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Dr ain-Source R esistanc e RDS(o Gate Thres hold Voltag e V GS (TH) ID=0.37A 0- 2 - 4 - 6 - 8 - 1 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 -10 -20 -30 -40 -50 Saturation Characteristics On-resistance vs Drain Current ID-Drain Current (mA) 0- 2 - 4 - 6 - 8- 1 0 -10 VDS-Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) -0.6 -0.2 -0.4 -0.8 0- 2- 4 - 6 - 8 - 1 0 -1.0 VGS=-20V -16V -6V -7V -8V -5V -4V -16V -9V ID= -400mA -200mA -100mA VDS=-10V VGS-Gate Source Voltage (Volts) VGS=-10V ID=-1mA VGS=VDS -1.2 -10V -9V -10V -6V 2.6 180 100 -10 -100 -1000 VGS=-5V VGS=-20V -15V -20V -7V -6V -7V -8V -10V -12V -5V -4.5V -14V VGS= -14V -12V ID - Drain Current (Amps) VDS - Drain Source Voltage (Volts) ID(On)-On-State Drain Current (Amps) TYPICAL CHARACTERISTICS Transconductance v drain current ID - Drain Current (Amps) gfs-Transconductance (mS) 100 -10 -14 -16 -12 0 0.5 1.0 1.5 Q-Gate Charge (nC) 120 Note:VDS=-10V Transconductance v gate-source voltage VGS -Gate Source Voltage (Volts) gfs-Transconductance (mS) 100 0- 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 1 0 120 Note:VDS=-10V 0 -10 -20 -30 -40 -50 -60 -70 VDS -Drain Source Voltage (Volts) Capacitance v drain-source voltage C-Capacitance (pF) Note:VGS=0V f=1MHz Ciss Coss Crss VGS-Gate Source Voltage (Volts) Gate charge v gate-source voltage VDS= -20V Note:ID=- 0.2A -40V -60V 3 - 56

VDS - Drain Source Voltage (Volts) ID - Drain Current (Amps) -0.8 -0.6 -0.4 -0.2 -1.0 Transfer Characteristics Normalised RDS(on) and VGS(th)vs Temperature Junction Temperature (°C) Normalised RDS(on)and VGS(th) -40 -20 0 20 40 60 80 120100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Dr ain-Source R esistanc e RDS(o Gate Thres hold Voltag e V GS (TH) ID=0.37A 0- 2 - 4 - 6 - 8 - 1 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 -10 -20 -30 -40 -50 Saturation Characteristics On-resistance vs Drain Current ID-Drain Current (mA) 0- 2 - 4 - 6 - 8- 1 0 -10 VDS-Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) -0.6 -0.2 -0.4 -0.8 0- 2- 4 - 6 - 8 - 1 0 -1.0 VGS=-20V -16V -6V -7V -8V -5V -4V -16V -9V ID= -400mA -200mA -100mA VDS=-10V VGS-Gate Source Voltage (Volts) VGS=-10V ID=-1mA VGS=VDS -1.2 -10V -9V -10V -6V 2.6 180 100 -10 -100 -1000 VGS=-5V VGS=-20V -15V -20V -7V -6V -7V -8V -10V -12V -5V -4.5V -14V VGS= -14V -12V ID - Drain Current (Amps) VDS - Drain Source Voltage (Volts) ID(On)-On-State Drain Current (Amps) TYPICAL CHARACTERISTICS Transconductance v drain current ID - Drain Current (Amps) gfs-Transconductance (mS) 100 -10 -14 -16 -12 0 0.5 1.0 1.5 Q-Gate Charge (nC) 120 Note:VDS=-10V Transconductance v gate-source voltage VGS -Gate Source Voltage (Volts) gfs-Transconductance (mS) 100 0- 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 1 0 120 Note:VDS=-10V 0 -10 -20 -30 -40 -50 -60 -70 VDS -Drain Source Voltage (Volts) Capacitance v drain-source voltage C-Capacitance (pF) Note:VGS=0V f=1MHz Ciss Coss Crss VGS-Gate Source Voltage (Volts) Gate charge v gate-source voltage VDS= -20V Note:ID=- 0.2A -40V -60V 3 - 56