BS250 DIODES | Alldatasheet
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Characteristic Symbol Value Unit Drain-Source Voltage –VDSS 60 V Drain-Gate Voltage –VDGS 60 V Gate-Source-Voltage (pulsed) VGS ±20 V Drain Current (continuous) –ID 250 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Operating and Storage Temperature Range Tj, TSTG -55 +150 °C Characteristic Symbol Value Unit Maximum Forward Current (continuous) IF 0.15 A Forward Voltage Drop (Typ.) @ VGS = 0, IF = 0.15A, Tj = 25°C VF 0.85 V Maximum Ratings @ TA = 25°C unless otherwise specified Inverse Diode @ TA = 25°C unless otherwise specified Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. D SGD H H BOTTOM VIEW E A B C G TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage -V(BR)DSS 60 70 — V ID = 100µA, VGS = 0 Gate Threshold Voltage -VGS(th) — 1.0 3.0 V VGS =V DS, –ID = 1.0mA Gate-Body Leakage Current -IGSS — — 20 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS — — 0.5 µA -VDS = 25V, VGS = 0 Drain-Source ON Resistance rDS (ON) — 3.5 5.0 /c87 -VGS = 10V, –ID = 0.2A Thermal Resistance, Junction to Ambient Air R/c113JA — — 150 K/W Note 1 Forward Transconductance gFS — 150 — mS -VDS = 10V, –ID = 0.2A, f = 1.0MHz Input Capacitance Ciss —6 0—p F -VDS = 10V, VGS = 0, f = 1.0MHz Switching Times Turn On Time Turn Off Time t on toff ns GS = 10V, –VDS = 10V, RD = 100/c87
DS21902 Rev. D-3 2 of 2 BS250 0 500 I , DRAIN CURRENT, (mA) Fig. 6, Transconductance vs. Drain Current D g ,FOR W ARD TRANSCONDUCT ANCE (mm) fs 100 200 300 400 200 300100 400 Pulse test width 80µs; pulse duty factor 1% -V = 10VDS 0 100 200 T , AMBIENT TEMPERATURE (ºC) Fig. 1, Power Deratin g Curve A P ,POWER DISSIP ATION (W) d 0.2 0.4 0.6 0.8 (See Note 1) 01 0 V , GATE-SOURCE VOLTAGE (V) Fig. 5, Transconductance vs Gate-Source Volta ge GS g ,FOR W ARD TRANSCONDUCT ANCE (mm) fs 100 200 300 400 500 4 62 8 Pulse test width 80µs; pulse duty factor 1% -V = 10VDS 0 100 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics DS (ON) DRAIN SOURCE ON CURRENT (A) 100 200 300 400 500 40 6020 80 -V = 5.5VGS 5.0V 3.0V 4.0V T = 25°CA Pulse test width 80µs; pulse duty factor 1% 4.5V 0 10 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate-Source Volta ge GS DRAIN CURRENT (A) 0.2 0.4 0.6 0.8 1.0 4 62 8 T = 25°CA Pulse test width 80µs; pulse duty factor 1% -V = 10VDS 0 10 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 3, Saturation Characteristics DS (ON) DRAIN SOURCE ON-CURRENT (mA) 100 200 300 400 500 4 62 8 -V = 5VGS 3.5V 3.0V T = 25°CA 4.0V Pulse test width 80µs; pulse duty factor 1% 4.5V