BS208 DIODES | Alldatasheet
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/c183Case: TO-92, Plastic /c183Leads: Solderable per MIL-STD-202, Method 208 /c183Pin Connections: See Diagram /c183Weight: 0.18 grams (approx.) Mechanical Data Maximum Ratings @ TA = 25°C unless otherwise specified Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80µs, duty factor = 1%. Characteristic Symbol Value Unit Drain-Source-Voltage -VDSS 240 V Drain-Gate-Voltage -VDGS 200 V Gate-Source-Voltage (pulsed) (Note 2) VGS ±20 V Drain-Current (continuous) -ID 200 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Operating and Storage Temperature Range Tj,T STG –55 to +150 °C /c183High Breakdown Voltage /c183High Input Impedance /c183Fast Switching Speed /c183Low Drain-Source On-Resistance /c183Specially Suited for Telephone Subsets Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Maximum Forward Current (continuous) IF 0.22 A Forward Voltage Drop (Typical) GS = 0, IF = 0.75A, Tj = 25°C VF 0.85 V D SGD H H BOTTOM VIEW E A B C G TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage -V(BR)DSS 200 230 — V -ID = 100µA, VGS = 0 Gate-Body Leakage Current -IGSS — — 10 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS -IDSX —— 1.0 25 µA -VDS =130V, VGS = 0 -VDS = 10V, -VGS = 0.2V Gate-Source Threshold Voltage -VGS(th) — 2.8 4.0 V VGS =V DS, -ID = 1.0mA Drain-Source ON Resistance rDS(ON) — 7.0 14 /c87 -VGS = 10V, -ID = 100 mA Thermal Resistance Junction to Ambient R/c113JA — — 150 K/W Note 1 Input Capacitance Output Capacitance Feedback Capacitance C iss Coss Crss 270 6.0 —p F -VDS = 20V, VGS= 0, f =1.0MHz Electrical Characteristics @ TA = 25°C unless otherwise specified
DS21901 Rev. E-3 2 of 2 BS208 0 10 -V , DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics DS ,DRAIN ON-CURRENT (mA) D 100 200 300 400 500 See Note 2 -V = 4.5VGS 2 46 8 T = 25°CA 5.0 4.0 3.5 -V , GATE-SOURCE VOLTAGE (V) Fig. 4. Drain-Source Current vs Gate-Source Voltage GS DRAIN-SOURCE CURRENT (A) DS, 0.2 0.4 0.6 0.8 1.0 T = 25°CA(See Note 2) 68 1 0 -V = 25VDS 200 400 02 4 g ,FOR W ARD TRANSCONDUCT ANCE (mm) fs -V , GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Volta ge GS -V = 25VDS See Note 2 68 1 0 100 300 0 1000 -I , DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current D g ,FOR W ARD TRANSCONDUCT ANCE (mm) fs 200 400 600 800 1000 500 See Note 2 -V = 25VDS 0 100 200 T , AMBIENT TEMPERATURE (ºC) Fig. 1. Power Deratin g Curve A P ,POWER DISSIP ATION (W) d 0.2 0.4 0.6 0.8 (See Note 1) 02 0 100 0.4 0.8 1.2 1.6 2.0 40 60 80 T = 25°CASee Note 2 -V = 9VGS -V , DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics DS (ON), DRAIN ON-CURRENT (A) D 3.5