BS107PT ZETEX | Alldatasheet
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ISSUE 2 – SEPT 93
FEATURES
- 200 Volt V DS *R DS(on)=28Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at Tamb=25°C I D 0.12 A Pulsed Drain Current I DM 2A Gate-Source Voltage V GS ±20 V Power Dissipation at Tamb =25°C P tot 500 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 200 230 V ID=100µA, VGS=0V Gate Body Leakage I GSS 10 nA VGS=15V, V DS=0V Drain Cut-Off Current I DSS 30 nA V GS=0V, VDS=130V Drain Cut-Off Current I DSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source on-State Resistance RDS(on) 15 28 Ω Ω VGS=2.6V, ID=20mA* VGS=2.7V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% BS107PT 3-24 D G S E-Line TO92 Compatible TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) ID(On) - On-State Drain Current (Amps) 0.8 0.6 0.4 0.2 1.0 Capacitance v drain-source voltage C-Capacitance (pF) 02 4 6 81 0 0.5 0.4 0.3 0.1 0 20 40 60 80 100 Saturation Characteristics Transfer characteristics 1.5 0.5 1.0 2.0 2.5 VDS-Drain Source Voltage (Volts) Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) 10V ID= 100mA 50mA 25mA VGS-Gate Source Voltage (Volts) 1.2 VGS= 10V VGS= ID(On) -On-State Drain Current (Amps) VDS - Drain Source Voltage (Volts) 0.2 VDS-Drain Source Voltage (Volts) Voltage Saturation Characteristics 0 2 4681 0 ID= 500mA 250mA I00mA 0.3 0.1 0.2 0.4 02 4 6 8 1 0 0.5 0.6 VDS=10V VDS=25V ID(On) -On-State Drain Current (Amps) 01 0 2 03 0 40 50 VDS -Drain-Source Voltage (Volts) Ciss Coss Crss VGS-Gate Source Voltage (Volts) BS107PT 3-25
ISSUE 2 – SEPT 93
- 200 Volt V DS *R DS(on)=28Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at Tamb=25°C I D 0.12 A Pulsed Drain Current I DM 2A Gate-Source Voltage V GS ±20 V Power Dissipation at Tamb =25°C P tot 500 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 200 230 V ID=100µA, VGS=0V Gate Body Leakage I GSS 10 nA VGS=15V, V DS=0V Drain Cut-Off Current I DSS 30 nA V GS=0V, VDS=130V Drain Cut-Off Current I DSX 1 µA VGS=0.2V, VDS=70V Static Drain-Source on-State Resistance RDS(on) 15 28 Ω Ω VGS=2.6V, ID=20mA* VGS=2.7V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% BS107PT 3-24 D G S E-Line TO92 Compatible TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) ID(On) - On-State Drain Current (Amps) 0.8 0.6 0.4 0.2 1.0 Capacitance v drain-source voltage C-Capacitance (pF) 02 4 6 81 0 0.5 0.4 0.3 0.1 0 20 40 60 80 100 Saturation Characteristics Transfer characteristics 1.5 0.5 1.0 2.0 2.5 VDS-Drain Source Voltage (Volts) Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) 10V ID= 100mA 50mA 25mA VGS-Gate Source Voltage (Volts) 1.2 VGS= 10V VGS= ID(On) -On-State Drain Current (Amps) VDS - Drain Source Voltage (Volts) 0.2 VDS-Drain Source Voltage (Volts) Voltage Saturation Characteristics 0 2 4681 0 ID= 500mA 250mA I00mA 0.3 0.1 0.2 0.4 02 4 6 8 1 0 0.5 0.6 VDS=10V VDS=25V ID(On) -On-State Drain Current (Amps) 01 0 2 03 0 40 50 VDS -Drain-Source Voltage (Volts) Ciss Coss Crss VGS-Gate Source Voltage (Volts) BS107PT 3-25
Transconductance v drain current ID(On)-Drain Current (Amps) VGS-Gate-Source Voltage (Volts) Gate charge v gate-source voltage Q-Charge (nC) 15 1 0 ID=500mA 50V 100V VGS-Gate Source Voltage (Volts) RDS(On)-Drain Source Resistance (Ω) ID= 500mA 250mA I00mA 500 400 300 100 25V VDS= gfs-Transconductance (mS) 200 Transconductance v gate-source voltage VGS -Gate-Source Voltage (Volts) 02 4 6 . 8 1 0 500 400 300 100 200 25V VDS= VDS= 180V 100 Gate charge v gate-source voltage 25mA Normalised RDS(on) and VGS(th)v Temperature T-Temperature (°C) Normalised RDS(on)and VGS(th) -40 -20 0 20 40 60 80 120100 140 150 2.4 2.0 1.6 1.2 0.8 Drai n-Source R es istance R DS(on) Gate Thres hold Voltage V GS (TH ID=100mA VGS=5V ID=-1mA VDS=VGS 0.5 -50 Power v temperature derating curve 0 40 80 120 160 200 500 400 300 100 PD-Power Dissipation (mW) 200 20 60 100 140 180 T-Temperature (°C) Tamb - Ambient Temperature (°C) gfs-Transconductance (mS) BS107PT 3-26