BS107 DIODES | Alldatasheet
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/c183Case: TO-92 Plastic /c183Leads: Solderable per MIL-STD-202, Method 208 /c183Pin Connections: See Diagram /c183Weight: 0.18 grams (approx.) Mechanical Data Maximum Ratings @ TA = 25°C unless otherwise specified Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80µs, duty factor = 1%. Characteristic Symbol Value Unit Drain-Source-Voltage VDSS 200 V Drain-Gate-Voltage VDGS 200 V Gate-Source-Voltage (pulsed) (Note 2) VGS ±20 V Drain-Current (continuous) ID 120 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Operating and Storage Temperature Range Tj,T STG -55 to +150 °C /c183High Breakdown Voltage /c183High Input Impedance /c183Fast Switching Speed /c183Specially Suited for Telephone Subsets Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Maximum Forward Current (continuous) IF 0.5 A Forward Voltage Drop (typical) @V GS = 0, IF = 0.5A, Tj = 25°C VF 0.85 V D SGD HH BOTTOM VIEW E A B C G TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage V(BR)DSS 200 230 — V ID = 100µA, VGS = 0 Gate-Body Leakage Current IGSS — — 10 nA VGS = 15V, VDS = 0 Drain-Cutoff Current IDSS IDSX —— 30 1.0 nA µA VDS =130V, VGS = 0 VDS = 70V, VGS = 0.2V Gate-Source Threshold Voltage VGS(th) — 1.8 3 V VGS =V DS, ID = 1.0mA Drain-Source ON Resistance rDS(ON) —1 82 8 /c87 VGS = 2.8V, ID = 20 mA Thermal Resistance, Junction to Ambient Air R/c113JA — — 150 K/W (Note 1) Input Capacitance Output Capacitance Feedback Capacitance C iss Coss Crss 8.0 1.5 —p F V DS = 20V, VGS = 0,f =1.0MHz Turn On Time Turn Off Time ton toff — 5.0 15 —n s VGS = 10V, VDS = 10V, RD = 100/c87 Electrical Characteristics @ TA = 25°C unless otherwise specified
DA21804 Rev. C-3 2 of 2 BS107 0 10 V , DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics DS I , DRAIN ON-CURRENT (mA)D(ON) 100 200 300 400 500 (See Note 2) V= 4 VGS 2 46 8 T = 25°CA 3.5V 2.5V 0 5 V , GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage GS I DRAIN CURRENT (A)D, 0.2 0.4 0.6 0.8 1.0 2 31 4 T = 25°CA (See Note 2) V = 25VDS 100 200 300 400 500 01234 5 g , FORWARD TRANSCONDUCT ANCE (mm) fs V , GATE-SOURCE VOLTAGE (VOLTS) Fig. 5. Transconductance vs Gate-Source Volta ge GS V = 25VDS See Note 2 0 200 I , DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current D g , FORWARD TRANSCONDUCT ANCE (mm) fs 100 200 300 400 500 100 (See Note 2) V = 25VDS 02 0 100 100 200 300 400 500 40 60 80 T = 25°CASee Note 2 V , DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics DS I (ON), DRAIN ON-CURRENT (mA)D V = 4.0VGS 3.5 3.0 2.5 2.0 0 100 200 T , AMBIENT TEMPERATURE (ºC) Fig. 1. Power Deratin g Curve A P , POWER DISSIP ATION (W) d 0.2 0.4 0.6 0.8 (See Note 1)