BMS3004-1E

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Technical content

Features

• ON-resistance R DS(on)1=6.5mΩ (typ.)
• Input capacitance Ciss=13400pF (typ.)
• 4V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS - -75 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D - -68 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -272 A Allowable Power Dissipation P D 2.0 W Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 380 mJ Avalanche Current *2 I AV - -54 A Note : *1 VDD=- -48V , L=100μH, IAV=- -54A (Fig.1) *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V - -75 V Zero-Gate Voltage Drain Current I DSS V DS=- -75V, VGS=0V - -10 μA Gate to Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=- -34A 120 S Static Drain to Source On-State Resistance RDS(on)1 I D=- -34A, VGS=--10V 6.5 8.5 mΩ RDS(on)2 I D=- -34A, VGS=--4V 8.3 11.4 mΩ Input Capacitance Ciss VDS=- -20V, f=1MHz 13400 pF Output Capacitance Coss 1000 pF Reverse Transfer Capacitance Crss 740 pF Turn-ON Delay Time td(on) See Fig.2 70 ns Rise Time tr 245 ns Turn-OFF Delay Time td(off) 1400 ns Fall Time tf 650 ns Total Gate Charge Qg VDS=- -48V, VGS=- -10V, ID=- -68A 300 nC Gate to Source Charge Qgs 30 nC Gate to Drain “Miller” Charge Qgd 70 nC Diode Forward Voltage VSD IS=- -68A, VGS=0V - -0.9 - -1.5 V Reverse Recovery Time trr See Fig.3 IS=- -68A, VGS=0V, di/dt=- -100A/μs 146 ns Reverse Recovery Charge Qrr 470 nC

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet. TO-220F-3SG

No. A1908-2/5 Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- mΩ Case Temperature, Tc -- °C Static Drain to Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate to Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT16255 IT16252 --50 --25 150 100 1000 IT16259 IT16257IT16256 --0.1 --1.023 5 7 100 1000 --0.01 --0.1 --1.0 --10 --100 --1000 1.0 10000 100000 2 --1035 7 --1005723 0 25 50 75 100 125 Tc= --25 --25 °CTc=75 ID= --34A Single pulse Single pulse Tc=75°C 25°C --25°C Tc= --25 25°C 75°C VDS= --10V Single pulse Tc=75 --25 Ciss Crss IT16258 100 1000 10000 td(off) VDD= --48V VGS= --10V tr --20 --40 --140 --120 --100 --80 --60 --20 --40 --140 --120 --100 --80 --60 IT16501 IT16253 Tc=25°C Single pulse --4V VGS= --3V --10V VDS= --10V Single pulse tf VGS= --4V , ID= --34A VGS= --10V , I D= --34A --8V Coss td(on) --6V f=1MHz VGS=0V Single pulse

No. A1908-3/5 Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V VGS -- Qg EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W PD -- Tc A S O Drain to Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT16250 20 40 60 80 100 120 140 100 120 160 IT16251 20 40 60 80 100 140 120 160 IT16249 20 40 60 80 100 140 120 2.5 2.0 1.0 0.5 1.5 160 IT16261 0 50 200 150 250100 300 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 --0.1 --1.0 --10 --0.1 IDP= --272A (PW≤10μs) ID= --68A 100μs1ms 10ms100msDC operation Operation in this area is limited by RDS(on). --1.023 5 7 2 --10 --10035 7 2 35 7 10μs --100 --1000 IT16260 VDS= --48V ID= --68A Tc=25°C Single pulse

No. A1908-4/5 MS3004 LOT No. Package Dimensions BMS3004-1E TO-220F-3SG CASE ISSUE O Unit : mm 1: Gate 2: Drain 3: Source Ordering & Package Information Marking Electrical Connection Device Package Shipping memo BMS3004-1E TO-220F-3SG SC-67 pcs./tube Pb-Free

PS No. A1908-5/5 Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit 50Ω ≥50Ω RG L BMS3004 G S D -10V PW=10μs D.C.≤1% P. G 50Ω G S D ID= -34A RL=1.4Ω VDD= -48V VOUT VIN VIN BMS3004 -10V VDD BMS3004 L Driver MOSFET G S D