BLW98

BLW98 PHILIPS | Alldatasheet

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW98 UHF linear power transistor

Philips Semiconductors Product specification UHF linear power transistor BLW98

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES:

• diffused emitter ballasting resistors for an optimum temperature profile;
• gold sandwich metallization ensures excellent reliability. The transistor has a 1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance in linear amplifier Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. MODE OF OPERATION f vision MHz VCE V IC mA Th dim(1) dB Po sync (1) W G p dB class-A 860 25 850 70 −60 > 3,5 > 6,5 class-A 860 25 850 25 −60 typ. 4,4 typ. 7,0 PIN CONFIGURATION Fig.1 Simplified outline. SOT122A. handbook, halfpage Top view MBK187 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF linear power transistor BLW98 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE =0 V CESM max. 50 V open base V CEO max. 27 V Emitter-base voltage (open collector) V EBO max. 3,5 V Collector current d.c. I C max. 2 A (peak value); f> 1 MHz I CM max. 4 A Total power dissipation at Th =7 0°CP tot max. 21,5 W Storage temperature T stg −65 to+150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. (1) Second breakdown limit (independent of temperature). handbook, halfpage IC (A) VCE (V) 10−1 MGP717 11 0 1 0 2 Th = 70 °C Tmb = 25 °C (1) Fig.3 Power derating curve vs. temperature. handbook, halfpage 50 100 MGP718 Ptot (W) Th (°C) THERMAL RESISTANCE (dissipation = 21,25 W; Tmb = 82,75°C, Th =7 0°C) From junction to mounting base R th j-mb = 5,45 K/W From mounting base to heatsink R th mb-h = 0,6 K/W

Philips Semiconductors Product specification UHF linear power transistor BLW98 Example Nominal class-A operation (without r.f. signal): VCE = 25 V; IC = 850 mA; Th =7 0°C. Fig.4 shows: R th j-h max. 6,05 K/W Tj max. 200 °C Typical device: Rth j-h typ. 5,35 K/W Tj typ. 183 °C Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h= 0,6 K/W.) handbook, full pagewidth 6.5 51 5 3 5 MGP719 4.5 5.5 R th j-h (K/W) Ptot (W) Th = 120 °C 60 °C 40 °C 20 °C 0 °C Tj = 200 °C 100 °C 175 °C 125 °C 75 °C 150 °C 100 °C 80 °C

Philips Semiconductors Product specification UHF linear power transistor BLW98 CHARACTERISTICS Tj=2 5°C unless otherwise specified Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. Collector-emitter breakdown voltage VBE = 0; IC = 10 mA V (BR)CES > 50 V open base, IC = 25 mA V (BR)CEO > 27 V Emitter-base breakdown voltage open collector, IE = 5 mA V (BR)EBO > 3,5 V D.C. current gain(1) typ. 40IC = 850 mA; VCE = 25 V h FE Collector-emitter saturation voltage(1) IC = 500 mA; IB = 100 mA V CEsat typ. 0,25 V Transition frequency at f = 500 MHz(2) −IE = 850 mA; VCB = 25 V f T typ. 2,5 GHz Collector capacitance at f = 1 MHz typ. pF pFIE =Ie = 0; VCB = 25 V C c Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 25 V C re typ. 15 pF Collector-stud capacitance C cs typ. 1,2 pF Fig.5 Typical values; VCE = 25 V. handbook, halfpage 20.5 1 1.5 10−1 10−2 MGP720 Th = 70 °C 25 °C IC (A) VBE (V)

Philips Semiconductors Product specification UHF linear power transistor BLW98 Fig.6 Typical values; Tj=2 5°C. handbook, halfpage MGP721 hFE 5 V IC (A) VCE = 25 V Fig.7 IE =Ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 typ 20 30 100 MGP722 C c (pF) VCB (V) Fig.8 VCB = 25 V; f = 500 MHz; Tj=2 5°C. handbook, full pagewidth MGP723 typ fT (GHz) −IE (A)

Philips Semiconductors Product specification UHF linear power transistor BLW98

APPLICATION INFORMATION

1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. fvision(MHz) V CE (V) I C (mA) T h (°C) d im(dB)(1) Po sync (W)(1) G P (dB) 860 25 850 70 −60 > 3,5 > 6,5 860 25 850 70 −60 typ. 3,8 typ. 7,0 860 25 850 25 −60 typ. 4,4 typ. 7,0 Fig.9 Class-A test circuit at fvision= 860 MHz. handbook, full pagewidth MGP724 50 Ω 50 Ω L1 T.U.T.C1 C5 C6 C10 C11 +VS BY206 BD136 C12 L2 L3 C9 VSWR output <VSWR input < 1.1 L4 C8

Philips Semiconductors Product specification UHF linear power transistor BLW98 List of components: C1 = C2 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = C4 = 100 nF polyester capacitor C5 = C6 = 1 nF feed-through capacitor C7 = 5,6 pF ceramic capacitor C8 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003) C9 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C10 = 10 µF/40 V solid aluminium electrolytic capacitor C11 = 470 nF polyester capacitor C12 = 2 × 3,3 pF chip capacitors (in parallel) R1 = 150 Ω carbon resistor (0,25 W) R5 = 4 × 12 Ω carbon resistors in parallel (1 W each) R2 = 1,8 k Ω carbon resistor (0,5 W) R6 = 1 k Ω carbon resistor (0,25 W) R3 = 33 Ω carbon resistor (0,5 W) R7 = 220 Ω carbon potentiometer (0,25 W) R4 = 220 Ω carbon resistor (1 W) L1 = stripline (13,6 mm× 6,9 mm) L2 = microchoke 0,47 µH (cat. no. 4322 057 04770) L3 = 1 turn Cu wire (1 mm); internal diameter 5,5 mm; leads 2× 5 mm L4 = stripline (40,8 mm× 6,9 mm) L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε r = 2,74); thickness 1,5 mm.

Philips Semiconductors Product specification UHF linear power transistor BLW98 The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.10 Component layout and printed circuit board for 860 MHz class-A test circuit. Note Hole in printed-circuit board: Ø 9,7 mm. handbook, full pagewidth MGP725 47 mm 96 mm C12 band V rivet C6 C11 +VCCVBB

Philips Semiconductors Product specification UHF linear power transistor BLW98 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal≤− 75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier−7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (d cm ) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to−20 dB. Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm )(2.) as a function of Po sync. Typical values; VCE = 25 V; IC = 850 mA;− − −Th =2 5°C; Th =7 0°C; fvision= 860 MHz. handbook, full pagewidth −50 −65 02 8 MGP726 −60 −55 dim (dB) dcm (%) dim dcm Po sync (W)

Philips Semiconductors Product specification UHF linear power transistor BLW98 Fig.12 Input impedance (series components). Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th =7 0°C. handbook, halfpage 400 650 900 MGP727 ri, xi (Ω ) f (MHz) xi ri Fig.13 Load impedance (series components). Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th =7 0°C. handbook, halfpage 400 650 900 MGP728 R L, XL (Ω ) f (MHz) R L XL Fig.14 Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th =7 0°C. handbook, halfpage 400 650 900 MGP729 G p (dB) f (MHz)

Philips Semiconductors Product specification UHF linear power transistor BLW98 PACKAGE OUTLINE UNIT A D 1 W REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 8-32 UNC α 90° SOT122A 97-04-18 H b H L detail X Db 5.85 5.58 0.18 0.14 5.97 4.74 cM 1 M 1.02 NN 3 11.82 11.04 w 1 0.381 Q 3.38 2.74 3.86 2.92 H 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 7.50 7.23 6.48 6.22 7.24 6.93 L N 1 max. 0 5 10 mm scale D 2 M ceramic BeO metal W Q A N N 1 N 3 M 1 D c X Studded ceramic package; 4 leads SOT122A α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A w 1 AM D 1 D 2

Philips Semiconductors Product specification UHF linear power transistor BLW98 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.