BLW97

BLW97 PHILIPS | Alldatasheet

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW97 HF power transistor

Philips Semiconductors Product specification HF power transistor BLW97

DESCRIPTION

N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched h FE groups. QUICK REFERENCE DATA R.F. performance up to Th = 25°C MODE OF OPERATION V CE V IC(ZS) A f MHz PL W G p dB ηdt dB dB s.s.b. (class-AB) 28 0,1 1,6 − 28 175 (PEP) > 11,5 > 40 <− 30 < −30 PIN CONFIGURATION Fig.1 Simplified outline. SOT121B. handbook, halfpage MLA876 PINNING - SOT121B. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF power transistor BLW97 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value) VBE = 0 V CESM max. 65 V open base V CEO max. 33 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current average I C(AV) max. 15 A peak value; f> 1 MHz I CM max. 50 A R.F. power dissipation f> 1 MHz; Th = 25°CP tot(rf) max. 230 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage 102 MGP703 11 0 1 0 2 IC (A) VCE (V) Th = 70 °C Tmb = 25 °C Fig.3 Power/temperature derating curves. I Continuous d.c. operation II Continuous r.f. operation (f> 1 Mhz). III Short-time operation during mismatch; (f> 1 MHz). handbook, halfpage 0 40 120 350 150 250 MGP704 Ptot (W) Th (°C) ΙΙ ΙΙΙ Ι THERMAL RESISTANCE (dissipation = 120 W; Th =2 5°C i.e. Tmb =4 9°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 0,63 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 0,48 K/W From mounting base to heatsink R th mb-h = 0,20 K/W

Philips Semiconductors Product specification HF power transistor BLW97 CHARACTERISTICS Tj=2 5°C unless otherwise specified Notes 1. Measured under pulse conditions: tp = 500µs. 2. Measured under pulse conditions: tp = 300µs;δ = 0,02. Collector-emitter breakdown voltage VBE = 0; IC = 50 mA V (BR)CES > 65 V IC = 100 mA; open base V (BR)CEO > 33 V Emitter-base breakdown voltage IE = 20 mA; open collector V (BR)EBO > 4V Collector cut-off current VCE = 33 V; VBE =0 I CES < 20 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 20 mJ R BE =1 0Ω ESBR > 20 mJ D.C. current gain(1) typ. 30 IC = 10 A; VCE =5 V h FE 15 to 50 D.C. current gain ratio of matched devices(1) IC = 10 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 25 A; IB =5 A V CEsat typ. 2,4 V Transition frequency at f = 100 MHz(2) −IE = 10 A; VCB = 28 V f T typ. 230 MHz −IE = 20 A; VCB = 28 V f T typ. 235 MHz Collector capacitance at f = 1 MHz IE =ie =0 ;VCB = 28 V C c typ. 380 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 28 V C re typ. 235 pF Collector-flange capacitance C cf typ. 4,5 pF

Philips Semiconductors Product specification HF power transistor BLW97 Fig.4 Tj=2 5°C. handbook, halfpage 01 0 3 0 MGP705 hFE IC (A) typ VCE = 28 V 15 V 5 V Fig.5 Tj=2 5°C; f = 100 MHz; tp = 300µs. handbook, halfpage 02 0 260 220 140 100 180 MGP706 fT (MHz) −IE (A) typ VCB = 28 V 15 V 5 V Fig.6 IE =ie = 0; f = 1 MHz; Tj= 25°C. handbook, halfpage 02 0 4 0 1000 800 400 200 600 MGP707 C c (pF) VCB (V) typ Fig.7 VCE = 28 V. handbook, halfpage 1300500 900 10−1 10−2 MGP708 VBE (mV) IC (A) typ Th = 70 °C 25 °C

Philips Semiconductors Product specification HF power transistor BLW97

APPLICATION INFORMATION

VCE = 28 V; Th = 25°C; f1 = 28,000 MHz; f2 = 28,001 MHz. Note 1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER G p ηdt IC d3(1) d5(1) IC(ZS) Wd B % A d B d B A handbook, full pagewidth 50 Ω MGP709 L1 R1 T.U.T. C6L3 C11 C14 C10 C4 C7 C9 R3 VCCVBB C12 C13 50 Ω

Philips Semiconductors Product specification HF power transistor BLW97 List of components: Note 1. American Technical Ceramics capacitor or capacitor of same quality. C1 = 47 pF (500 V) multilayer ceramic chip capacitor(1) C2 = 100 pF film dielectric trimmer C3 = 2 × 130 pF (300 V) multilayer ceramic chip capacitors in parallel(1) C4 = 280 pF film dielectric trimmer C5 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103 C6 = 2 × 180 pF (300 V) multilayer ceramic chip capacitors in parallel (1) C7 = 100 nF (50 V) multilayer ceramic chip capacitor 2222 856 48104 C8 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103 C9 = 2,2 µF - 63 V solid aluminium electrolytic capacitor C10 = 5 × 82 pF (500 V) multilayer ceramic chip capacitors in parallel (1) C11 = 250 pF air dielectric trimmer C12 = 5 × 33 pF ceramic feed-through capacitors mounted in parallel on a brass plate C13 = 100 pF air dielectric trimmer C14 = 3 × 91 pF (500 V) multilayer ceramic chip capacitors in parallel (1) R1 = 0,7 Ω - 7 W (7× 4,7Ω - 1 W carbon resistors in parallel) R2 = 27 Ω - 0,25 W carbon resistor R3 = 4,7 Ω - 0,25 W carbon resistor L1 = 73 nH; 4 turns Cu wire (1,5 mm); int. dia. 7 mm; length 9,4 mm; leads 2× 5 mm L2 = Ferroxcube wide-band h.f. choke grade 3B (cat. no. 4312 020 36640); 6 leads in parallel L3 = 70,4 nH; 4 turns Cu wire (2 mm); int. dia. 7 mm; length 14,8 mm; leads 2× 5 mm L4 = 83,5 nH; 4 turns Cu wire (2 mm); int. dia. 8 mm; length 15 mm; leads 2× 5 mm L5 = Ferroxcube wide-band h.f. choke grade 3 B (cat. no. 4312 020 36640) with 6 leads in parallel

Philips Semiconductors Product specification HF power transistor BLW97 Fig.9 Intermodulation distortion (see note on preceding page). VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C. handbook, halfpage 0 120 240 −80 −20 −60 −40 MGP710 d3, d5 (dB) PL (W) P.E.P. typ Fig.10 Power gain and double-tone efficiency. VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C. handbook, halfpage 0 120 240 MGP711 G P (dB) ηcdt (%) PL (W) P.E.P. ηcdt G P typ RUGGEDNESS The BLW97 is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 150 W (P.E.P.) or a load mismatch (VSWR = 5 through all phases) up to 175 W (P.E.P.) under the following conditions: V CE = 28 V; f = 28 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W. Figures 11 and 12 t typical curves which are valid for one transistor of a push-pull amplifier in s.s.b. class-AB operation. Fig.11 Power gain. handbook, halfpage30 MGP712 11 0 1 0 2 G P (dB) f (MHz) typ VCE = 28 V; IC(ZS) = 0,1 A; PL = 175 W(PEP); Th =2 5°C; ZL = 1,55Ω

Philips Semiconductors Product specification HF power transistor BLW97 Fig.12 Input impedance (series components). VCE = 28 V; IC(ZS) = 0,1 A; PL = 175 W(PEP); Th =2 5°C; ZL = 1,55Ω handbook, halfpage4 MGP713 11 0 1 0 2 ri, −xi (Ω ) f (MHz) −xi ri typ Fig.13 Input impedance (series components). handbook, halfpage 25 125 −0.5 0.5 MGP714 f (MHz) ri, xi (Ω ) xi ri typ VCE = 28 V; PL = 175 W; Th =2 5°C; class-B operation. Fig.14 Load impedance (series components). handbook, halfpage 25 125 MGP715 R L (Ω ) 1.5 0.5 1.0 XL (Ω ) typ R L XL f (MHz) VCE = 28 V; PL = 175 W; Th =2 5°C; class-B operation. Fig.15 Power gain. handbook, halfpage 25 125 MGP716 G P (dB) f (MHz) typ VCE = 28 V; PL = 175 W; Th =2 5°C; class-B operation.

Philips Semiconductors Product specification HF power transistor BLW97 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF power transistor BLW97 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.