BLW95

BLW95 NXP | Alldatasheet

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| BLW95 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hfe groups are available on request. The transistor has a 4" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Tp = 25 °C mode of operation | Voce lc(zs) f PL Gp Nat dg v A MHz Ww dB % dB * At 160 WP.E.P. MECHANICAL DATA SOT-121A (see Fig. 1). PRODUCT SAFETY This device incorporates bery!lium oxide, the dust of which is toxic, The device is entirely safe provided that the BeO disc is not damaged. | August 1986 891

MECHANICAL DATA Dimensions in mm Fig. 1 SOT-121. WA \\ . cepe-o4 29 | 26 | \\7 89 iA eS ‘ rr 5 ceramic c — e | ‘| | 25,2 || 13 mi max 18.42 | max 5 min ‘ | FALL 29 e 2 Ld 26 a! 12338 (9 metal MY 3,04 (2%) r 12,2 max —>| a — 2,54 450 4+ ‘ 405 7.5 F max 72783344 Torque on screw: min. 0,6 Nm (6 kg cm) max. 0,75 Nm (7,5 kg cm) Recommended screw: cheese-head 4-40 UNC/2A Heatsink compound must be applied sparingly and evenly distributed.

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H.F. power transistor BLW95 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VE = 0) peak value VcESM max. 110 V Collector-emitter voltage (open base) VcEO max. 53 V Emitter-base voltage (open collector) VEBO max. 4Vv Collector current (average) Ic(AV) max. 8A Collector current (peak value); f > 1 MHz Iom max. 20 A R.F. power dissipation (f > 1 MHz); Tip = 25 °C Pre max. 245 W Storage temperature Tstg —65 to + 150 °C Operating junction temperature Tj max. 200 °C 30 7277895 300 7277459.2 PPT Terry ert PPP eer HEHE EEA Io Prot Er Preyer rrr (A) ww) EECEP Pre eeree SERS PPT Tr ASE t BREE EEE ERE | aS Sa 200 CCPRSECCCECCEEEEE SS oo a a CCCCCSsS CCC P \\ TA {ot tr COe or Ss ,," COOP | NI {TT Trt RET Cre, rN CPC PRIS 7, TT

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IX [TTT POET Pe ters Tie N SEE ReEER Coy TAA N COC ~ 98>" LSS NX ) roo FE eee Wr = Nl CO rs TI \\ Pr Ter sed IN Prey ere ree s Pere Perr rrr HABE AH PrP rrr rrr rrr Pre Pee 1 (oe 10 50 102 0 50 T,(°c) 100 Vee (V) nc} #21 MHz. | Continuous d.c. operation 1 Continuous r.f. operation Il Short-time operation during mismatch THERMAL RESISTANCE (dissipation = 100 W; Tmpb = 90 °C, i.e. Ty = 70 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(de) = 1,0 KW From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 0,7 KAN From mounting base to heatsink Rth mb-h = 0,2 KAW NS August 1986 893

BLW95 | | CHARACTERISTICS T)= 25 0C Collector-emitter breakdown voltage Vee =0;!¢ = 25 mA ViBR)CES > 110 V Collector-emitter breakdown voltage open base; I¢ = 100 mA V(BR)CEO > 53 V Emitter-base breakdown voltage open collector; Iz = 20 mA V(BR)EBO > 4v Collector cut-off current Vee = 0; Vee = 53 V Ices < 10 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base Espo > 12,5 mJ Ree = 102 Espr > 12,5 mJ D.C. current gain * = . = typ. 30 Ic=4A;Voe=5V hE 1 to 50 D.C. current gain ratio of matched devices * Ic=4A;VcE=5V hrev/hee2 < 1,2 Collector-emitter saturation voltage * Io = 12,5 A; 1g =2,5A VcEsat typ, 2,2 V Transition frequency at f = 100 MHz * —le= 4A;Vcop=40V aa typ. 270 MHz —le = 12,5 A; Vog =40V fr typ. 285 MHz Collector capacitance at f = 1 MHz le = le = 0; Veg =50V Ce typ. 185 pF Feedback capacitance at f = 1 MHz Ic = 150 mA; Vcg = 50 V Cre typ. 115 pF Collector-flange capacitance Cot typ. 3 pF * Measured under pulse conditions: tp < 200 us; 6 < 0,02. :

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H.F. power transistor | BLW95 10 7Z77896.1 60 7277897 ee oe a Coo Ree ee CCEeCecCe cece | AAR FARA HH HH HHH -H \\ a EEEEEEEEE EEE A EEE re FEEL EEE EEE mT | LET Teri EERE rr] ECEEEEEEEEEEEEEEEEE a COCO Cee eee eee) FEEEESZERREEEEE) “ECEEEEEEEETHH Voe=a6v EEREEREE EERE COCO eee er | I COC eer rT hov | [yt] a COC eer Coe SORNY COMMU ORRUN S522 cccascereTcnnee VOTE), KASS | |

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0 10 ig (ay 20 0 25 50 von (vy 78 Fig. 6 Typical values; f = 100 MHz; Tj = 25 OC. Fig. 7 Ip ='g=0;f=1 MHz; T]=25 lon August 1986 895

BLW95 | |

APPLICATION INFORMATION

R.F. performance in s.s.b, class-AB operation (linear power amplifier) Voce = 50 V; Th = 25 °C; fy = 28,000 MHz; fo = 28,001 MHz output power Gp nat (%) Ic (A) dg dg 'c(zs) Ww dB at 160 W (P.E.P.) dB* dB* A cto Xs ct La 500 Z5* TUT. 6) 500. 1 R1 (Pr iS. a fo) cit IL a Lg (C12 C13 cs f | ‘temperature e ¢ compensated bias Co Rg L5 H+} ec a 7277098 List of components: C1 = C10 = 100 pF film dielectric trimmer C2 = C6 = 27 pF ceramic capacitor (500 V) C3 = 220 pF polystyrene capacitor C4 = C13 = 100 pF film dielectric trimmer C5 = C7 = 3,9 nF ceramic capacitor C8 = 100 nF polyester capacitor C9 = 2,2 uF moulded metallized polyester capacitor C11 = 68 pF ceramic capacitor (500 V) C12 = 220 pF polystyrene capacitor L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 x 5 mm L2 = L5 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 180 nH; 4 turns enamelled Cu wire (1,6 mm); int. dia. 12,0 mm; length 9,9 mm; leads 2 x 10 mm L4 = 350 nH; 7 turns enamelled Cu wire (1,6 mm); int. dia. 12,0 mm; length 19,1 mm; leads 2 x 10 mm R1 = 0,66 9; parallel connection of 5 x 3,3 Q carbon resistors (+ 5%; 0,5 W each) R2= 27 Q carbon resistor (+ 5%; 0,5 W) R3= 4,7 Q carbon resistor (+ 5%; 0,5 W) * Stated intermodulation distortion figures are referred to the according level of either of the equal am- plified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.

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H.F. power transistor BLW95 20 7277900 60 7277901 20 ~ TTT TTT ty PP TT] EEE EEEEEECEEEEEETH EERE EEE d i Pry ry Prt rrr HS |

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Fig. 9 Intermodulation distortion as a Fig.10 Double-tone efficiency and power function of output power.* gain as a function of output power, Conditions for Figs 9 and 10: Vee = 50 V; I¢(zs) = 0,1 A; f7 = 28,000 MHz; fo = 28,001 MHz; Ty, = 25 °C; typical values. Ruggedness The BLW95 is capable of withstanding full load mismatch (VSWR = 50) up to 150 W (P.E.P.) under the following conditions: Voce = 45V; f = 28 MHz; Th = 70 °C; Reh mb-h = 0.2 KW. * See noite on previous page. | August 1986 897

HHI CHHD “Faerie ae ee | SCTE CHIT i int LTT AN PT TIN ETT a ell Nl a el oot LTT VT, a derennaiiil LT TS LT NAGE TTT eel LT TNT || a ll LE TTT PT TTI NTT Lt LETITIA 1 10 f(MHz) 10? 1 10 fimHz) 10? Fig. 11 Power gain as a function of frequency. Fig. 12 Input impedance (series components) as a function of frequency. Figs 11 and 12 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. vone sv: '¢(zs) = 0,1 A; PL = 160 W (P.E.P.); Th = 25 °C; Z_ = 6,25 Q in series with 7,3 nH (in parallel with —188 pF).

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H.F. power transistor | BLW95 a “coin “oOo Gp oo ‘i AH 5) Hail HH Seaetienaaall PA mill sof | TIT TTT gE ATT ail PATE ET RG lll TRH NE ll Nl [NEE PARE lll ll vot TI INET 4 ll Sana; almanali LEN TT TTT TT al | LT ERAS LT meena iil Nl woL LETH TT gt ETT Fig. 13 Power gain as a function of frequency. Fig. 14 Input impedance (series components) as a function of frequency. Figs 13 and 14 are ‘pica! cures and hold for one transistor of a push-pull amplifier with cross- neutralization in s.s.b. class-AB operation. Conditions: Voce = 50 V; Ic(zg) = 0,1 A; Py = 160 W (P.E.P.); Th = 25 °C; Z;_ = 6,25 & in series with 10,4 nH (in parallel with —267 pF); neutralizing capacitor: 82 pF. | August 1986 899