BLW898 PHILIPS | Alldatasheet

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Product specification Supersedes data of 1995 Oct 04

1996 Jul 16

UHF linear power transistor

1996 Jul 16 2

Philips Semiconductors Product specification UHF linear power transistor BLW898

FEATURES

  • Internal input matching for wideband operation and high power gain
  • Polysilicon emitter ballasting resistors for an optimum temperature profile
  • Gold metallization ensures excellent reliability. APPLICATION
  • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.

DESCRIPTION

NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a P o sync= 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. PINNING SOT171A PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter Fig.1 Simplified outline and symbol. handbook, halfpage MAM141Top view e c b QUICK REFERENCE DATA RF performance at Th =2 5°C in a common emitter test circuit. Note 1. Three-tone test signal (−8,−16, and−10 dB); dim = −63 dB. MODE OF OPERATION f (MHz) VCE (V) ICQ (A) Po sync (W) G p (dB) CW class-A 860 25 1.1 ≥3(1) ≥9(1) WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

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Philips Semiconductors Product specification UHF linear power transistor BLW898 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 3.7 A IC(AV) average collector current − 3.7 A Ptot total power dissipation up to T mb =7 0°C − 44 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting-base Ptot= 44 W; Tmb =7 0°C 3 K/W R th mb-h thermal resistance from mounting-base to heatsink

0.3 K/W

Fig.2 Power derating curve. (1) Continuous operation (2) Short-time operation during mismatch. handbook, halfpage 120 Ptot (W) (2) (1) 40 80 160 MGD531 120 Tmb °C

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Philips Semiconductors Product specification UHF linear power transistor BLW898 CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 15 mA; IE =0 6 0 −− V V(BR)CEO collector-emitter breakdown voltage IC = 30 mA; IB =0 2 8 −− V V(BR)EBO emitter-base breakdown voltage IE = 0.6 mA; IC = 0 2.5 −− V ICBO collector-base leakage current V BE = 0; VCB =2 8V −− 1.5 mA ICEO collector-emitter leakage current VCE =2 0V −− 3m A hFE DC current gain V CE = 25 V; IC = 1.1 A 30 − 140 C c collector capacitance V CB = 25 V; IE =ie =0 ; f = 1 MHz − 18 − pF C re feedback capacitance V CB = 25 V; IC = 0; f = 1 MHz− 11 − pF Fig.3 DC current gain as a function of collector current; typical values. VCE = 25 V; tp = 500µs;δ =< 1% . handbook, halfpage hFE

2 IC (A) 3

Fig.4 Collector capacitance as a function of collector-base voltage; typical values. IE =ie = 0; f = 1 MHz. handbook, halfpage C c (pF) 10 20 40 MGD533 VCB (V)

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Philips Semiconductors Product specification UHF linear power transistor BLW898

APPLICATION INFORMATION

RF performance at Th =2 5°C in a common emitter class-A test circuit. Notes 1. Three-tone test method (vision carrier−8 dB, sound carrier−10 dB, sideband signal−16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the conditions: VCE = 25 V; ICQ = 1.1 A; Th =2 5°C; f = 860 MHz; Po sync=3W . MODE OF OPERATION f (MHz) VCE (V) ICQ (A) Po sync (W) G p (dB) dim (dB) Fig.5 Output power as a function of input power; typical values. VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage 012 Po sync (W) Pi sync (W) MGD534 (2) (1) Fig.6 Power gain as a function of output power; typical values. VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage 01 0 G p (dB) 20 30 MGD535 Po sync (W) (2) (1)

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Philips Semiconductors Product specification UHF linear power transistor BLW898 Fig.7 Intermodulation distortion as a function of output power; typical values. VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage −10 −30 −50 −70 10 20 30 MGD536 dim (dB) Po sync (W) (1) (2) Fig.8 Intermodulation distortion as a function of collector current; typical values. VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; Po sync=3W ; (3-tone;−8/−16/−10 dB). (1) Th =7 0°C. (2) Th =2 5°C. handbook, halfpage -40 -50 -60 -70 0.4 0.8 1.6 MGD537 1.2 IC (A) (2) (1) dim (dB) Fig.9 Class-A test circuit at 860 MHz. handbook, full pagewidth MGD538 /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, DUT C4 C5 L4 L9 L10 L11 L5L1C1 +VBB +VCC L2 L3 L8L7 C13 output 50 Ω input 50 Ω C9 C10 C11 C12 L12 C6 C7

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Philips Semiconductors Product specification UHF linear power transistor BLW898 Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit. Dimensions in mm. handbook, full pagewidth 7777 160 MGD539 C10 C5 C4 L12 L10L9 L11 L1 C7 C3 L7 & L8L4 & L5 L2 & L3 C11 C13 C12 +VCC+VBB

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Philips Semiconductors Product specification UHF linear power transistor BLW898 List of components Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad PCB with PTFE fibre-glass dielectric (ε r = 2.2); thickness 0.79 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 multilayer ceramic chip capacitor; note 1 8.2 pF C2, C8 Tekelec Giga trim 37271 0.6 to 4.5 pF C3 multilayer ceramic chip capacitor; note 1 15 pF C4, C12 multilayer ceramic chip capacitor 10 nF; 63 V 2222 592 16627 C5 solid aluminium capacitor 10 µF; 63 V 2222 030 38109 C6 multilayer ceramic chip capacitor; note 2 10 pF C7 multilayer ceramic chip capacitor; note 2 2.4 pF C9 multilayer ceramic chip capacitor; note 2 500 pF C10 solid aluminium capacitor 47 µF; 63 V 2222 031 38479 C11 multilayer ceramic chip capacitor; note 2 330 pF C13 multilayer ceramic chip capacitor; note 1 5.1 pF L1 stripline; note 3 50 Ω 50 × 2.3 mm L2 stripline; note 3 50 Ω 10 × 2.3 mm L3 stripline; note 3 40 Ω 2 × 3.25 mm L4, L5 stripline; note 3 40 Ω 4 × 3.25 mm L6 RF choke 220 nH L7 stripline; note 3 40 Ω 9 × 3.25 mm L8 stripline; note 3 40 Ω 3.5× 3.25 mm L9 stripline; note 3 50 Ω 9 × 2.3 mm L10 stripline; note 3 50 Ω 48.5× 2.3 mm L11 stripline; note 3 40 Ω 41.5× 3.25 mm L12 grade 4S2 ferroxcube wideband RF choke 4330 030 36301 R1 metal film resistor 50 Ω ; 0.6 W 2322 156 14999 R2 metal film resistor 10 Ω ; 0.6 W 2322 156 11009

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Philips Semiconductors Product specification UHF linear power transistor BLW898 Table 1 Common emitter scattering parameter, ICQ = 1.1 A; VCE =2 5V . f (MHZ) S11 S21 S12 S22 G UM (dB)MAG. (RAT) ANG. (DEG) MAG. (RAT) ANG. (DEG) MAG. (RAT) ANG. (DEG) MAG. (ANG) ANG. (DEG)

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Philips Semiconductors Product specification UHF linear power transistor BLW898 PACKAGE OUTLINE Fig.11 SOT171A. Dimensions in mm. handbook, full pagewidth MBC828 - 1 5 6 1 (2x) 2.25 1.85(2x) 3.25 2.859.15 2.25 min 5.85 11.5 10.5 3.45 3.15(2x) 2.8 6 max 0.14 4.50 4.05 7.0 max 18.4225.2 max 9.3 max

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Philips Semiconductors Product specification UHF linear power transistor BLW898 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com/ps/ (1) BLW898_2 June 26, 1996 11:51 am Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1996 SCA50 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 83749, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 926 5361, Fax. +7 095 564 8323 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 708 296 8556 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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