BLW87

BLW87 PHILIPS | Alldatasheet

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW87 VHF power transistor

Philips Semiconductors Product specification VHF power transistor BLW87

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =2 5°C in an unneutralized common-emitter class-B circuit MODE OF OPERATION V CE V f MHz PL W G p dB η zi Ω YL mS c.w. 13,5 175 25 > 6 > 70 1,6 + j1,4 210 + j5,5 PIN CONFIGURATION handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB057 PINNING - SOT123 PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification VHF power transistor BLW87 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value V CESM max. 36 V Collector-emitter voltage (open base) V CEO max. 18 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 6 A Collector current (peak value); f> 1 MHz I CM max. 12 A R.F. power dissipation (f> 1 MHz); Tmb = 25°CP rf max. 76 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP649 11 0 1 0 2 VCE (V) IC (A) Th = 70 °C Tmb = 25 °C Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f≥ 1 MHz. handbook, halfpage 0 50 100 150 100 MGP650 Prf (W) Th (°C) continuous d.c. operation derate by

0.32 W/K

r.f. operation derate by

0.42 W/K

(dissipation = 20 W; Tmb =7 6°C; i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 3,0 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 2,25 K/W From mounting base to heatsink R th mb-h = 0,3 K/W

Philips Semiconductors Product specification VHF power transistor BLW87 CHARACTERISTICS Tj=2 5°C Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Collector-emitter breakdown voltage VBE = 0; IC = 25 mA V (BR) CES > 36 V Collector-emitter breakdown voltage open base; IC = 50 mA V (BR) CEO > 18 V Emitter-base breakdown voltage open collector; IE = 10 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 18 V I CES < 10 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 8m J R BE =1 0Ω ESBR > 8m J D.C. current gain(1) typ. 50 IC = 2,5 A; VCE =5 V h FE 10 to 80 Collector-emitter saturation voltage(1) IC = 7,5 A; IB = 1,5 A V CEsat typ. 1,7 V Transition frequency at f = 100 MHz(1) −IE = 2,5 A; VCB = 13,5 V f T typ. 800 MHz −IE = 7,5 A; VCB = 13,5 V f T typ. 750 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 15 V C c typ. 65 pF Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 15 V C re typ. 41 pF Collector-flange capacitance C cf typ. 2 pF

Philips Semiconductors Product specification VHF power transistor BLW87 Fig.4 handbook, halfpage 0 5 10 15 hFE MGP651 IC (A) VCE = 13.5 V 5 V typical values Tj = 25 °C Fig.5 Tj=2 5°C. handbook, halfpage 01 0 2 0 200 C c (pF) MGP652 VCB (V) 100 typ IE = Ie = 0 f = 1 MHz Fig.6 handbook, full pagewidth 1000 051 0 MGP653 500 15−IE (A) fT (MHz) VCB = 13.5 V f = 100 MHz Tj = 25 °C typ

Philips Semiconductors Product specification VHF power transistor BLW87

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =2 5°C List of components: Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8. f (MHz) V CE (V) P L (W) P S (W) G P (dB) I C (A) η (%) zi(Ω ) YL (mS) 175 13,5 25 < 6,25 > 6 < 2,64 > 70 1,6 + j1,4 210 + j5,5 175 12,5 25 − typ. 6,6 − typ. 75 −− C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2× 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2× 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2× 5 mm L7 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2× 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω (± 10%) carbon resistor (0,25 W) R2 = 4,7 Ω (± 5%) carbon resistor (0,25 W) Fig.7 Test circuit; c.w. class-B. handbook, full pagewidth 50 Ω 50 Ω MGP604 /,/, /,/, /,/, C2 C3b C3a C6a C5 R2 C6b C8 L5 L7 T.U.T. +VCC

Philips Semiconductors Product specification VHF power transistor BLW87 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. handbook, full pagewidth MGP605 1888MJK 1888MJK C1 C2 C3a C5 R2 C3b C6b C6a L8L3 L1 L5 +VCC rivet 150

Philips Semiconductors Product specification VHF power transistor BLW87 Fig.9 handbook, halfpage 0 5 10 15 MGP654 PL (W) PS (W) typical values f = 175 MHz VCE = 13.5 V VCE = 12.5 V Th = 25 °C Th = 70 °C Fig.10 handbook, halfpage 150 100 G p (dB) MGP655 η (%) PL (W) typical values f = 175 MHz Th = 25 °C VCE = 13.5 V VCE = 12.5 V G p η Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70°C; R th mb-h= 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS =P Snom at VCEnom and VSWR =1; measured in the circuit of Fig.7. handbook, halfpage 1 1.1 1.2 1.3 PLnom (W) (VSWR = 1) MGP656 VCE VCEnom VSWR = 20 PS PSnom The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive S/PSnom ) increases linearly with supply over-voltage ratio.

Philips Semiconductors Product specification VHF power transistor BLW87 OPERATING NOTE Below 50 MHz a base-emitter resistor of 10Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. Fig.12 handbook, halfpage 0 100 ri, xi (Ω ) 300200 MGP657 f (MHz) input impedance (series components) versus frequency (class-B operation) xi ri xi ri Typical values; VCE = 13,5 V; PL = 25 W; Th = 25°C. Fig.13 handbook, halfpage R L (Ω ) 100 200 300 C L (pF) −500 500 MGP658 f (MHz) load impedance (parallel components) versus frequency (class-B operation) C L R L R L C L Typical values; VCE = 13,5 V; PL = 25 W; Th = 25°C. Fig.14 handbook, halfpage 0 100 G p (dB) 200 300 MGP659 f (MHz) power gain versus frequency (class-B operation) Typical values; VCE = 13,5 V; PL = 25 W; Th = 25°C.

Philips Semiconductors Product specification VHF power transistor BLW87 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power transistor BLW87 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.