BLW86

BLW86 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW86 HF/VHF power transistor

Philips Semiconductors Product specification HF/VHF power transistor BLW86

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =2 5°C MODE OF OPERATION VCE V f MHz PL W G p dB η zi Ω YL mS dB c.w. (class-B) 28 175 45 > 7,5 > 70 0,7 + j1,3 110− j62 − PIN CONFIGURATION handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB057 PINNING - SOT123 PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF/VHF power transistor BLW86 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE =0 ) peak value V CESM max. 65 V Collector-emitter voltage (open base) V CEO max. 36 V Emitter-base voltage (open-collector) V EBO max. 4 V Collector current (average) I C(AV) max. 4 A Collector current (peak value); f> 1 MHz I CM max. 12 A R.F. power dissipation (f> 1 MHz); Tmb =2 5°CP rf max. 105 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP630 10 10 2 IC (A) Th = 70 °C Tmb = 25 °C VCE (V) Fig.3 R.F. power dissipation; VCE ≤ 28 V; f> 1 MHz. I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch handbook, halfpage 0 50 100 150 100 MGP631 Prf (W) Th (°C) Ι ΙΙ ΙΙΙ derate by 0.58 W/K

0.43 W/K

(dissipation = 45 W; Tmb = 83,5°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 2,65 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 1,95 K/W From mounting base to heatsink R th mb-h = 0,3 K/W

Philips Semiconductors Product specification HF/VHF power transistor BLW86 CHARACTERISTICS Tj=2 5°C unless otherwise specified Collector-emitter breakdown voltage VBE =0 ;IC =2 5m A V (BR)CES > 65 V Collector-emitter breakdown voltage open base; IC = 100 mA V (BR)CEO > 36 V Emitter-base breakdown voltage open collector; IE =1 0m A V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE =3 6V I CES < 10 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 8m J R BE =1 0Ω ESBR > 8m J D.C. current gain(1) IC = 2,5 A; VCE =5V hFE typ. 45 10 to 80 D.C. current gain ratio of matched devices(1) IC = 2,5 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 7,5 A; IB = 1,5 A V CEsat typ. 1,5 V Transition frequency at f = 100 MHz(1) −IE = 2,5 A; VCB = 28 V f T typ. 570 MHz −IE = 7,5 A; VCB = 28 V f T typ. 570 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB =2 8V C c typ. 82 pF Feedback capacitance at f=1M H z IC = 100 mA; VCE =2 8V C re typ. 54 pF Collector-flange capacitance C cf typ. 2 pF Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Fig.4 Typical values; VCE = 28 V. handbook, halfpage 0.5 1.5 MGP632 Th = 70 °C 25 °C IC (A) VBE (V)

Philips Semiconductors Product specification HF/VHF power transistor BLW86 Fig.5 Typical values; Tj=2 5°C. handbook, halfpage 0 5 10 15 100 MGP633 VCE = 28 V 5 V hFE IC (A) Fig.6 IE =Ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 02 0 4 0 300 200 MGP634 100 typ C c (pF) VCB (V) Fig.7 Typical values; f = 100 MHz; Tj=2 5°C. handbook, full pagewidth 1000 05 1 0 MGP635 500 15 V VCB = 28 V fT (MHz) −IE (A)

Philips Semiconductors Product specification HF/VHF power transistor BLW86

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =2 5°C List of components: L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6". R1 = R2 = 10Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.9. f (MHz) V CE (V) P L (W) P S (W) G P (dB) I C (A) η (%) zi(Ω ) YL (mS) 175 28 45 < 8 > 7,5 < 2,47 > 70 0,7 + j1,3 110 − j62 C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = 2,2 pF ceramic capacitor (500 V) C6b = 1,8 pF ceramic capacitor (500 V) C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2× 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2× 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm× 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2× 5 mm L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2× 5 mm Fig.8 Test circuit; c.w. class-B. handbook, full pagewidth 50 Ω 50 Ω MGP604 /,/, /,/, /,/, C2 C3b C3a C6a C5 R2 C6b C8 L5 L7 T.U.T. +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW86 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed. Fig.9 Component layout and printed-circuit board for 175 MHz test circuit. handbook, full pagewidth MGP605 1888MJK 1888MJK C1 C2 C3a C5 R2 C3b C6b C6a L8L3 L1 L5 +VCC rivet 150

Philips Semiconductors Product specification HF/VHF power transistor BLW86 Fig.10 Typical values; VCE = 28 V; f = 175 MHz. handbook, halfpage 01 0 2 0 MGP636 PL (W) PS (W) 70 °CTh = 25 °C Fig.11 Typical values; VCE = 28 V; f = 175 MHz; handbook, halfpage 0 2 55 07 5 100 MGP637 G p (dB) η (%) PL (W) η G p f = 175 MHz; VCE = 28 V; Rth mb-h= 0,3 K/W The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. handbook, halfpage100 MGP638 11 0 VSWR 102 PLnom (W) (VSWR = 1) 90 °C 70 °C Th = 50 °C

Philips Semiconductors Product specification HF/VHF power transistor BLW86 Fig.13 Input impedance (series components). handbook, halfpage 0 100 200 300 2.5 −2.5 MGP639 ri, xi (Ω ) f (MHz) xi ri xi ri Typical values; VCE = 28 V; PL = 45 W; Th =2 5°C. Fig.14 Load impedance (parallel components). handbook, halfpage 0 100 R L (Ω ) R L C L R L C L C L (pF) 200 f (MHz) 300 −500 −250 MGP640 Typical values; VCE = 28 V; PL = 45 W; Th =2 5°C. Fig.15 Power gain versus frequency. handbook, halfpage 0 100 200 300 MGP641 f (MHz) G p (dB) Typical values; VCE = 28 V; PL = 45 W; Th =2 5°C. OPERATING NOTE Below 75 MHz a base-emitter resistor of 10Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only.

Philips Semiconductors Product specification HF/VHF power transistor BLW86 VCE = 28 V; f1 = 28,000; f2 = 28,001 MHz. Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. List of components: OUTPUT POWER W G P dB ηdt (%) at 47,5 W IC (A) (P.E.P.) dB (1) dB (1) IC(ZS) mA Th C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = C5 = C6 = 220 nF polyester capacitor C4 = 56 pF ceramic capacitor (500 V) C7 = C8 = 15 to 575 pF film dielectric trimmer L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2× 5m m L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2× 5 mm L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2× 5 mm R1 =1,2Ω ; parallel connection of 4× 4,7Ω carbon resistors R2 = 39Ω carbon resistor handbook, full pagewidth 50 Ω MGP642 50 Ω temperature compensated bias T.U.T. C5 C6 +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW86 Fig.17 Intermodulation distortion as a function of output power.(1) VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; typical values. handbook, halfpage 02 5 5 0 −20 −50 −40 −30 MGP643 d3, d5 (dB) P.E.P. (W) Th = 90 °C 70 °C 50 °C 25 °C Fig.18 Double-tone efficiency and power gain as a function of output power. VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C; typical values. handbook, halfpage 02 5 G p (dB) 50 P.E.P. (W)75 MGP644 ηdt (%) G p ηdt Fig.19 Power gain as a function of frequency. handbook, halfpage30 MGP645 11 0 1 0 2 G p (dB) f (MHz) VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W; Th =2 5°C; ZL = 6,4Ω . Figs 19 and 20 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Fig.20 Input impedance (series components) as a function of frequency. handbook, halfpage20 −10 MGP646 11 0 1 0 2 ri, xi (Ω ) f (MHz) ri xi VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W; Th =2 5°C; ZL = 6,4Ω .

Philips Semiconductors Product specification HF/VHF power transistor BLW86 Ruggedness in s.s.b. operation The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation; f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th =7 0°C and PLnom = 50 W P.E.P. VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W G P dB IC A dB (1) dB (1) Th handbook, full pagewidth 50 Ω MGP647 50 Ω L1 R3 T.U.T. C10 C11 C4L2 R2R1 +VCC R5 R8 BY206 BD204

Philips Semiconductors Product specification HF/VHF power transistor BLW86 List of components in Fig.21: C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = 22 nF ceramic capacitor (63 V) C4 = 47µF/10 V electrolytic capacitor C5 = 56 pF ceramic capacitor (500 V) C6 = 47µF/35 V electrolytic capacitor C7 = C8 = 220 nF polyester capacitor C9 = 10 µF/35 V electrolytic capacitor C10 = 10 to 210 pF film dielectric trimmer C11 = 15 to 575 pF film dielectric trimmer L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2× 5 mm L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm R1 = 600Ω; parallel connection of 2× 1,2 kΩ carbon resistors (±5%; 0,5 W each) R2 = 15 Ω carbon resistor (±5%; 0,25 W) R3 = 1,2Ω ; parallel connection of 4× 4,7Ω carbon resistors (±5%; 0,125 W each) R4 = 33 Ω carbon resistor (±5%; 0,25 W) R5 = 18 Ω carbon resistor (±5%; 0,25 W) R6 = 120Ω wirewound resistor (±5%; 5,5 W) R7 = 1 Ω carbon resistor (±5%; 0,125 W) R8 = 47 Ω wirewound potentiometer (3 W) R9 = 1,57Ω; parallel connection of 3× 4,7Ω wirewound resistors (±5%; 5,5 W each) Fig.22 Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; Th =7 0°C; f1 = 28,000 MHz; f2 = 28,001 MHz. handbook, halfpage 03 0 −20 −30 −50 −60 −40 10 20 P.E.P. (W) MGP648 IC = 1.4 A 1.55 A 1.7 A (dB)

Philips Semiconductors Product specification HF/VHF power transistor BLW86 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power transistor BLW86 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.