BLW85

BLW85 PHILIPS

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Product specification March 1993 DISCRETE SEMICONDUCTORS BLW85 HF/VHF power transistor

Philips Semiconductors Product specification HF/VHF power transistor BLW85

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h = 25°C MODE OF OPERATION V CE V f MHz PL W G p dB η zi Ω ZL Ω dB PIN CONFIGURATION handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB057 PINNING - SOT123 PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF/VHF power transistor BLW85 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value V CESM max. 36 V Collector-emitter voltage (open base) V CEO max. 16 V Emitter-base voltage (open-collector) V EBO max. 4 V Collector current (average) I C(AV) max. 9 A Collector current (peak value); f> 1 MHz I CM max. 22 A R.F. power dissipation up to (f> 1 MHz); Tmb =2 5°CP rf max. 105 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP612 11 0 1 0 2 VCE (V) IC (A) Th = 70 °C Tmb = 25 °C Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f≥ 1 MHz. handbook, halfpage 0 50 100 150 120 100 MGP613 Prf (W) Th (°C) continuous d.c. operation derate by 0.43 W/K continuous r.f. operation derate by

0.58 W/K

(dissipation = 30 W; Tmb =7 9°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 2,5 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 1,8 K/W From mounting base to heatsink R th mb-h = 0,3 K/W

Philips Semiconductors Product specification HF/VHF power transistor BLW85 CHARACTERISTICS Tj=2 5°C Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Collector-emitter breakdown voltage VBE = 0; IC = 50 mA V (BR) CES > 36 V Collector-emitter breakdown voltage open base; IC = 100 mA V (BR) CEO > 16 V Emitter-base breakdown voltage open collector; IE = 25 mA V (BR)EBO > 4V Collector cut-off current V BE = 0; VCE = 18 V I CES < 25 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 8m J R BE =1 0Ω ESBR > 8m J D.C. current gain(1) typ. 50 IC = 4 A; VCE =5 V h FE 10 to 80 D.C. current gain ratio of matched devices(1) IC = 4 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 12,5 A; IB = 2,5 A V CEsat typ. 1,5 V Transition frequency at f = 100 MHz(1) −IE = 4 A; V CB = 12,5 V f T typ. 650 MHz −IE = 12,5 A; VCB = 12,5 V f T typ. 600 MHz Collector capacitance at f = 1 MHz IE =Ie =0 ;VCB = 15 V C c typ. 120 pF Feedback capacitance at f = 1 MHz IC = 200 mA; VCE = 15 V C re typ. 82 pF Collector-flange capacitance C cf typ. 2 pF

Philips Semiconductors Product specification HF/VHF power transistor BLW85 Fig.4 handbook, halfpage 0 5 10 15 100 hFE MGP614 IC (A) VCE = 12.5 V 5 V typical values Tj = 25 °C Fig.5 Tj=2 5°C. handbook, halfpage 01 0 2 0 300 C c (pF) MGP615 VCB (V) 100 200 typ IE = Ie = 0 f = 1 MHz Fig.6 handbook, full pagewidth 750 05 1 0 MGP616 500 250 15 −IE (A) fT (MHz) VCB = 12.5 V 10 V 5 V typical values f = 100 MHz Tj = 25 °C

Philips Semiconductors Product specification HF/VHF power transistor BLW85

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =2 5°C List of components: f (MHz) V CE (V) P L (W) P S (W) G p (dB) I C (A) η (%) zi(Ω ) ZL (Ω ) 175 12,5 45 < 16 > 4,5 < 4,8 > 75 1,4 + j1,5 2,7 − j1,3 175 13,5 45 − typ. 6,0 − typ. 75 −− C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2× 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2× 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm× 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2× 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2× 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω (±10%) carbon resistor (0,25 W) R2 = 4,7 Ω (±5%) carbon resistor (0,25 W) Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8. Fig.7 Test circuit; c.w. class-B. handbook, full pagewidth 50 Ω 50 Ω MGP604 /,/, /,/, /,/, C2 C3b C3a C6a C5 R2 C6b C8 L5 L7 T.U.T. +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW85 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed. Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. handbook, full pagewidth MGP605 1888MJK 1888MJK C1 C2 C3a C5 R2 C3b C6b C6a L8L3 L1 L5 +VCC rivet 150

Philips Semiconductors Product specification HF/VHF power transistor BLW85 Fig.9 Typical values; f = 175 MHz; handbook, halfpage 01 0 3 0 100 MGP617 PL (W) PS (W) Th = 25 °C Th = 70 °C Fig.10 Typical values; f = 175 MHz ;Th =2 5°C; handbook, halfpage 10 30 50 G p (dB) 100 η (%) MGP618 PL (W) η G p Fig.11 R.F. SOAR; (short-time operation during mismatch); f = 175 MHz; Th = 70°C; R th mb-h= 0,3 K/W ; VCEnom = 12,5 V or 13,5 V; PS =P Snom at VCEnom and VSWR =1 measured in the circuit of Fig.7. handbook, halfpage 1 1.1 1.2 1.3 PLnom (W) (VSWR = 1) MGP619 VCE VCEnom VSWR = PS PSnom The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive S/PSnom ) increases linearly with supply over-voltage ratio.

Philips Semiconductors Product specification HF/VHF power transistor BLW85 Fig.12 Input impedance (series components). handbook, halfpage 0 100 200 MGP620 f (MHz) ri ri, xi (Ω ) xi Typical values; VCE = 12,5 V; PL =4 5W ; class-B operation; Th =2 5°C Fig.13 Load impedance (series components). handbook, halfpage 0 100 200 MGP621 f (MHz) R L, XL (Ω ) R L XL Typical values; VCE = 12,5 V; PL =4 5W ; class-B operation; Th =2 5°C Fig.14 handbook, halfpage 0 100 200 G p (dB) MGP622 f (MHz) Typical values; VCE = 12,5 V; PL =4 5W ; class-B operation; Th =2 5°C

Philips Semiconductors Product specification HF/VHF power transistor BLW85 VCE = 12,5 V; Th up to 25°C; Rth mb-h≤ 0,3 K/W f1 = 28,000 MHz; f2 = 28,001 Mhz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W G p dB ηdt dB (1) dB (1) IC(ZS) mA handbook, full pagewidth MGP623 R1L2 C4C3 L3 C12 C13 C14C6 T.U.T. C10 C11 C9 R2 L5 +VB = 12.5 V TR2 biasTR1 C16 C15 R L = 50 Ω +VB = 12.5 V R S = 50 Ω

Philips Semiconductors Product specification HF/VHF power transistor BLW85 List of components: TR1 = TR2 = BD137 C1 = 100 pF air dielectric trimmer (single insulated rotor type) C2 = 27 pF ceramic capacitor (500 V) C3 = 180 pF polystyrene capacitor C4 = 100 pF air dielectric trimmer (single non-insulated rotor type) C5 = C7 = 3,9 nF polyester capacitor C6 = 2 × 270 pF polystyrene capacitors in parallel C8 = C15 = C16 = 100 nF polyester capacitor C9 = 2,2 µF moulded metallized polyester capacitor C10 = 2 × 385 pF (sections in parallel) film dielectric trimmer C11 = 68 pF ceramic capacitor (500 V) C12 = 2 × 82 pF ceramic capacitors in parallel (500 V) C13 = 47 pF ceramic capacitor (500 V) C14 = 385 pF film dielectric trimmer L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2× 5 mm L2 = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640) L3 = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2× 5 mm L4 = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2× 5 mm R1 = 27 Ω (±5%) carbon resistor (0,5 W) R2 = 4,7 Ω (±5%) carbon resistor (0,25 W) R3 = 1,5 k Ω (±5%) carbon resistor (0,5 W) R4 = 10 Ω wirewound potentiometer (3 W) R5 = 47 Ω wirewound resistor (5,5 W) R6 = 150 Ω (±5%) carbon resistor (0,25 W)

Philips Semiconductors Product specification HF/VHF power transistor BLW85 Fig.16 handbook, halfpage 02 0 4 0 −20 d3, d5 (dB) −60 −40 MGP624 P.E.P. (W) intermodulation distortion versus output power * VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th =2 5°C; R th mb-h≤ 0,3°K/W; IC(ZS) = 25 mA; typical values. Fig.17 handbook, halfpage 02 0 4 0 ηdt (%) MGP625 P.E.P. (W) typ double-tone efficiency versus output power VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th =2 5°C; R th mb-h≤ 0,3°K/W; IC(ZS) = 25 mA; typical values. Fig.18 handbook, halfpage 02 0 4 0 −20 d3, d5 (dB) −60 −40 MGP626 P.E.P. (W) intermodulation distortion versus output power * VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25°C; R th mb-h≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values. * Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. Fig.19 handbook, halfpage 02 0 4 0 ηdt (%) MGP627 P.E.P. (W) typ double-tone efficiency versus output power VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25°C; R th mb-h≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values.

Philips Semiconductors Product specification HF/VHF power transistor BLW85 Fig.20 Power gain as a function of frequency. handbook, halfpage30 MGP628 11 0 1 0 2 G p (dB) f (MHz) Fig.21 Input impedance (series components) as a function of frequency. handbook, halfpage10 MGP629 11 0 1 0 2 2.5 7.5 −2.5 2.5 ri (Ω ) xi (Ω ) f (MHz) xi ri Conditions: VCE = 12, 5 V V CE = 13, 5 V Th =2 5°CT h =2 5°C R th mb-h≤ 0,3 K/W R th mb-h≤ 0,3 K/W IC(ZS) = 25 mA I C(ZS) = 25 mA ZL = 1,8Ω ZL = 1,8Ω

Philips Semiconductors Product specification HF/VHF power transistor BLW85 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power transistor BLW85 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.