BLW83

BLW83 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW83 HF/VHF power transistor

Philips Semiconductors Product specification HF/VHF power transistor BLW83

DESCRIPTION

N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance MODE OF OPERATION V CE V f MHz PL W G p dB ηdt IC A dB Th PIN CONFIGURATION handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB057 PINNING - SOT123 PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF/VHF power transistor BLW83 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value V CESM max. 65 V Collector-emitter voltage (open base) V CEO max. 36 V Emitter-base voltage (open-collector) V EBO max. 4 V Collector current (average) I C(AV) max. 3 A Collector current (peak value); f> 1 MHz I CM max. 9 A R.F. power dissipation (f> 1 MHz); Tmb =2 5°CP rf max. 76 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP586 10−1 11 0 1 0 2 IC (A) VCE (V) Th = 70 °C Tmb = 25 °C Fig.3 R.F. power dissipation; VCE ≤ 28 V; f≥ 1 MHz. handbook, halfpage 0 50 100 150 100 MGP587 Prf (W) Th (°C) continuous d.c. operation derate by 0.32 W/K continuous r.f. operation derate by

0.42 W/K

(dissipation = 35 W; Tmb =8 0°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 3,15 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 2,35 K/W From mounting base to heatsink R th mb-h = 0,3 K/W

Philips Semiconductors Product specification HF/VHF power transistor BLW83 CHARACTERISTICS Tj=2 5°C unless otherwise specified Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Collector-emitter breakdown voltage VBE = 0; IC = 10 mA V (BR)CES > 65 V Collector-emitter breakdown voltage open base; IC = 50 mA V (BR)CEO > 36 V Emitter-base breakdown voltage open collector; IE = 10 mA V (BR)EBO > 4V Collector cut-off current V BE = 0; VCE = 36 V I CES < 4m A Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 8m J R BE =1 0Ω ESBR > 8m J D.C. current gain(1) typ. 50 IC = 1,25 A; VCE =5 V h FE 10 to 100 D.C. current gain ratio of matched devices(1) IC = 1,25 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 3,75 A; IB = 0,75 A V CEsat typ. 1,5 V Transition frequency at f = 100 MHz(1) −IE = 1,25 A; VCB = 28 V f T typ. 530 MHz −IE = 3,75 A; VCB = 28 V f T typ. 530 MHz Collector capacitance at f = 1 MHz IE =Ie =0 ;VCB = 28 V C c typ. 50 pF Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V C re typ. 31 pF Collector-flange capacitance C cf typ. 2 pF Fig.4 Typical values; VCE = 28 V. handbook, halfpage 012 MGP588 IC (A) VBE (V) Th = 70 °C 25 °C

Philips Semiconductors Product specification HF/VHF power transistor BLW83 Fig.5 Typical values; Tj=2 5°C. handbook, halfpage 05 1 0 MGP589 VCE = 28 VhFE IC (A) 5 V Fig.6 IE =Ie = 0; f = 1 MHz; Tj= 25°C. handbook, halfpage 02 0 4 0 150 100 MGP590 C c (pF) VCB (V) typ Fig.7 Typical values; f = 100 MHz; Tj= 25°C. handbook, full pagewidth 106 600 02 8 MGP591 200 400 fT (MHz) −IE (A) VCB = 28 V 15 V

Philips Semiconductors Product specification HF/VHF power transistor BLW83

APPLICATION INFORMATION

VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W G p dB IC A dB (1) dB (1) Th handbook, full pagewidth 50 Ω MGP592 50 Ω L1 R3 T.U.T. C10 C11 C12 C4L2 R2R1 +VCC R5 R8 BY206 BD204

Philips Semiconductors Product specification HF/VHF power transistor BLW83 List of components in Fig.8: C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = 22 nF ceramic capacitor (63 V) C4 = 47 µF/10 V electrolytic capacitor C5 = 56 pF ceramic capacitor (500 V) C6 = 47 µF/35 V electrolytic capacitor C7 = C8 = 220 nF polyester capacitor C9 = 10 µF/35 V electrolytic capacitor C10 = C11 = 7 to 100 pF film dielectric trimmer C12 = 82 pF ceramic capacitor (500 V) L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2× 5 mm L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm R1 = 600 Ω ; parallel connection of 2× 1,2 kΩ carbon resistors (±5%; 0,5 W each) R2 = 15 Ω carbon resistor (±5%; 0,25 W) R3 = 1,2 Ω ; parallel connection of 4× 4,7Ω carbon resistors (±5%; 0,125 W each) R4 = 33 Ω carbon resistor (±5%; 0,25 W) R5 = 18 Ω carbon resistor (±5%; 0,25 W) R6 = 120 Ω wirewound resistor (±5%; 5,5 W) R7 = 1 Ω carbon resistor (±5%; 0,125 W) R8 = 47 Ω wirewound potentiometer (3 W) R9 = 1,57 Ω ; parallel connection of 3× 4,7Ω wirewound resistors ( 5%; 5,5 W each) Fig.9 Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; —— Th =7 0°C; − − −Th = 25°C. handbook, halfpage 0 5 10 15 −20 −60 −40 MGP593 (dB) P.E.P. (W) IC = 0.8 A 1 A 1.35 A

Philips Semiconductors Product specification HF/VHF power transistor BLW83 VCE = 28 V; f1 = 28,000 MHz; f2 = 28,001 MHz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. List of components: OUTPUT POWER G p ηdt (%) I C (A) d 3 d5 IC(ZS) Th W dB at 30 W P.E.P. dB (1) dB (1) mA °C C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = C5 = C6 = 220 nF polyester capacitor C4 = 56 pF ceramic capacitor (500 V) C7 = C8 = 15 to 575 pF film dielectric trimmer L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2× 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2× 5 mm L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2× 5 mm R1 = 1,2 Ω ; parallel connection of 4× 4,7Ω carbon resistors R2 = 39 Ω carbon resistor handbook, full pagewidth 50 Ω MGP594 50 Ω L1 R1 T.U.T. C8C4 +VCC C5 C6 temperature compensated bias

Philips Semiconductors Product specification HF/VHF power transistor BLW83 Fig.11 Intermodulation distortion as a function of output power.(1) handbook, halfpage 02 0 4 0 −20 −40 −50 −30 MGP595 d3, d5 (dB) P.E.P. (W) Th = 90 °C 70 °C 50 °C 25 °C Th = 90 °C 70 °C 50 °C 25 °C VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; typical values Fig.12 Double-tone efficiency and power gain as a function of output power. VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C; typical values handbook, halfpage 02 0 4 0 MGP596 ηdt (%) G p (dB) G p ηdt P.E.P. (W) Figs 13 and 14 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Fig.13 Power gain as a function of frequency. handbook, halfpage MGP597 11 0 1 0 2 G p (dB) f (MHz) VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25°C; ZL = 9,5Ω Ruggedness in s.s.b. operation The BLW83 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: f 1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th =7 0°C and PLnom = 35 W (P.E.P.). Fig.14 Input impedance (series components) as a function of frequency. handbook, halfpage MGP598 11 0 1 0 2 ri (Ω ) ri −12.5 −7.5 −10 −2.5 xi (Ω ) f (MHz) xi VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25°C; ZL = 9,5Ω

Philips Semiconductors Product specification HF/VHF power transistor BLW83 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power transistor BLW83 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.