BLW80

BLW80 PHILIPS

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Product specification March 1993 DISCRETE SEMICONDUCTORS BLW80 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLW80

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. QUICK REFERENCE DATA R.F. performance up to Th =2 5°C in an unneutralized common-emitter class-circuit. MODE OF OPERATION V CE V f MHz PL W G p dB η zi Ω YL mS c.w. 12,5 470 4 > 8,0 > 60 2,1 + j2,3 57 − j56 c.w. 12,5 175 4 typ. 15,0 typ. 60 2,0 − j2,2 51 −j48 PIN CONFIGURATION Fig.1 Simplified outline. SOT122A. handbook, halfpage Top view MBK187 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLW80 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE =0 ) peak value V CESM max 36 V Collector-emitter voltage (open base) V CEO max 17 V Emitter-base voltage (open collector) V EBO max 4 V Collector current (d.c.) I C max 1 A Collector current (peak value); f> 1 MHz I CM max 3 A Total power dissipation (d.c. and r.f.) up to Tmb =2 5°CP tot max 17 W Storage temperature T stg −65 to+150 °C Operating junction temperature T j max 200 °C Fig.2 D.C. soar. 11 0 1 0 2 handbook, halfpage10 10−1 VCE (V) IC (A) MGP938 Th = 70 °C Tmb = 25 °C Fig.3 R.F. power dissipation. handbook, halfpage 0 50 100 MGP939 Th (°C) Prf (W) short time operation during mismatch continuous operation derate by

0.092 W/K

r.f. power dissipation VCE ≤ 16.5 V f > 1 MHz THERMAL RESISTANCE From junction to mounting base R th j-mb = 10,3 K/W From mounting base to heatsink R th mb-h = 0,6 K/W

Philips Semiconductors Product specification UHF power transistor BLW80 CHARACTERISTICS Tj=2 5°C Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Breakdown voltages Collector-emitter voltage VBE =0 ;IC =1 0m A V (BR)CES > 36 V Collector-emitter voltage open base; IC =5 0m A V (BR)CEO > 17 V Emitter-base voltage open collector; IE = 4 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE =1 7V I CES < 4m A D.C. current gain(1) IC = 0,5 A; VCE =5V h FE > 10 typ 35 Collector-emitter saturation voltage(1) IC = 1,5 A; IB = 0,3 A V CEsat typ 0,75 V Transition frequencyat f = 500 MHz(1) IC = 0,5 A; VCE = 12,5 V f T typ 1,75 GHz IC = 1,5 A; VCE = 12,5 V f T typ 1,25 GHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 12,5 V C c typ 14 pF Feedback capacitanceat f = 1 MHz IC = 40 mA; VCE = 12,5 V C re typ 7,1 pF Collector-stud capacitance C cs typ 1,2 pF

Philips Semiconductors Product specification UHF power transistor BLW80 Fig.4 handbook, halfpage 0123 MGP562 IC (A) hFE typ VCE = 5 V Tj = 25 °C Fig.5 handbook, halfpage C c (pF) 10 20 MGP563 VCB (V) typ IE = Ie = 0 f = 1 MHz Tj = 25 °C Fig.6 handbook, full pagewidth fT (GHz)

0 IC (A)

VCE = 12.5 V f = 500 MHz Tj = 25 °C

Philips Semiconductors Product specification UHF power transistor BLW80

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th =2 5°C List of components: f (MHz) V CE (V) P L (W) P S (W) G p (dB) I C (A) η (%) zi(Ω ) YL (mS) 470 12,5 4 < 0,63 > 8,0 < 0,53 > 60 2,1 + j2,3 57 − j56 470 13,5 4 − typ 9,5 − typ 65 −− 175 12,5 4 − typ 15,0 − typ 60 2,0 − j2,2 51 − j48 C1 = 2,2 pF ( ± 0,25 pF) ceramic capacitor C2 = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 5,6 pF ( ± 0,25 pF) ceramic capacitor C4 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C5 = 100 pF ceramic feed-through capacitor C6 = 100 nF polyester capacitor L1 = stripline (22,5 mm× 6,0 mm) L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2× 5 mm L3 = L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = 51 nH; 3,5 turns Cu wire (1 mm); int. dia. 6 mm; coil length 7 mm; leads 2× 5 mm L6 = stripline (10,0 mm× 6,0 mm) L7 = 15 nH; 1 turn Cu wire (1 mm); int. dia. 5 mm; leads 2× 5 mm L1 and L6 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε r = 2,74); thickness 1/16". R1 = R2 = 10 Ω (± 5%) carbon resistor Component layout and printed-circuit board for 470 MHz test circuit (Fig.8). Fig.7 Class-B test circuit at f = 470 MHz. handbook, full pagewidth MGP565 50 Ω 50 Ω C4 L2 C8L6 L7 +VCC L1 T.U.T. R1L3 C6 R2

Philips Semiconductors Product specification UHF power transistor BLW80 Fig.8 Component layout and printed-circuit board for 470 MHz test circuit. The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets. handbook, full pagewidth MGP566 L1 L6 C7L5 R2 C6 L4 +VCC rivet 101

Philips Semiconductors Product specification UHF power transistor BLW80 Fig.9 handbook, halfpage 01 2 MGP567 PL (W) PS (W) Th = 25 °C 70 °C f = 470 MHz typical values VCC = 12.5 V VCC = 13.5 V Fig.10 handbook, halfpage 150 100 G p (dB) MGP568 η (%) PL (W) G p η f = 470 MHz Th = 25 °C typical values VCC = 12.5 V VCC = 13.5 V Fig.11 handbook, halfpage 1 1.1 1.2 1.3 6.5 PLnom (W) VSWR = 1 5.5 MGP569 VCC VCCnom VSWR = PS PSnom Conditions for R.F. SOAR f = 470 MHz Th = 70°C R th mb-h= 0,6 K/W VCCnom = 12,5 V or 13,5 V PS =P Snom at VCCnom and VSWR = 1 measured in the circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other that the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. The graph applies to the situation in which the drive S/PSnom ) increases linearly with supply over-voltage ratio.

Philips Semiconductors Product specification UHF power transistor BLW80 OPERATING NOTE Below 300 MHz a base-emitter resistor of 10Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. Fig.12 handbook, halfpage 100 G p (dB) 300 500 MGP570 f (MHz) power gain versus frequency (class-B operation) Measuring conditions: VCC = 12,5 V PL =4W Th =2 5°C typical values Fig.13 handbook, halfpage 100 ri, xi (Ω ) 300 500 MGP571 f (MHz) xi ri xi ri input impedance (series components) versus frequency (class-B operation) Measuring conditions: VCC = 12,5 V PL =4W Th =2 5°C typical values Fig.14 handbook, halfpage 100 R L (Ω ) 300 500 C L (pF) −10 −50 −70 −30 MGP572 f (MHz) C L R L load impedance (parallel components) versus frequency (class-B operation) Measuring conditions: VCC = 12,5 V PL =4W Th =2 5°C typical values

Philips Semiconductors Product specification UHF power transistor BLW80 PACKAGE OUTLINE UNIT A D 1 W REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 8-32 UNC α 90° SOT122A 97-04-18 H b H L detail X Db 5.85 5.58 0.18 0.14 5.97 4.74 cM 1 M 1.02 NN 3 11.82 11.04 w 1 0.381 Q 3.38 2.74 3.86 2.92 H 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 7.50 7.23 6.48 6.22 7.24 6.93 L N 1 max. 0 5 10 mm scale D 2 M ceramic BeO metal W Q A N N 1 N 3 M 1 D c X Studded ceramic package; 4 leads SOT122A α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A w 1 AM D 1 D 2

Philips Semiconductors Product specification UHF power transistor BLW80 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.