BLW78

BLW78 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW78 HF/VHF power transistor

Philips Semiconductors Product specification HF/VHF power transistor BLW78

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =2 5°C Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. MODE OF OPERATION V CE V IC IC(ZS) A f MHz PL W G p dB η d3(1) dB c.w. (class-B) 28 − 150 100 > 6 > 70 − PIN CONFIGURATION Fig.1 Simplified outline. SOT121B. handbook, halfpage MLA876 PINNING - SOT121B. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF/VHF power transistor BLW78 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE =0 ) peak value V CESM max. 70 V Collector-emitter voltage (open base) V CEO max. 35 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 10 A Collector current (peak value); f> 1 MHz I CM max. 25 A R.F. power dissipation (f> 1 MHz); Tmb =2 5°CP rf max. 160 W Storage temperature T stg −65 to+150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP543 102 11 0 1 0 2 IC (A) VCE (V) Th = 70 °CT mb = 25 °C Fig.3 R.F. power dissipation; VCE ≤ 28 V; f> 1 MHz. I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch handbook, halfpage 0 50 100 200 150 MGP544 100 Prf (W) Th (°C) ΙΙΙ ΙΙ Ι derate by

0.61 W/K

derate by 0.79 W/K THERMAL RESISTANCE (dissipation = 80 W; Tmb =8 6°C; i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 1,45 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 1,06 K/W From mounting base to heatsink R th mb-h = 0,2 K/W

Philips Semiconductors Product specification HF/VHF power transistor BLW78 CHARACTERISTICS Tj=2 5°C Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. Collector-emitter breakdown voltage VBE =0 ;IC =5 0m A V (BR)CES > 70 V Collector-emitter breakdown voltage open base; IC = 100 mA V (BR)CEO > 35 V Emitter-base breakdown voltage open collector; IE = 5 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE =3 5V I CES < 5m A D.C. current gain(1) IC = 5 A; VCE =5V h FE 20 to 85 Collector-emitter saturation voltage IC = 15 A; IB =3 A V CEsat typ. 2 V Transition frequency at f= 100 MHz(2) −IE = 5 A; VCB =2 8V f T typ. 370 MHz −IE = 15 A; VCB =2 8V f T typ. 350 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB =2 8V C c typ. 155 pF Feedback capacitance at f=1M H z IC = 100 mA; VCE =2 8V C re typ. 102 pF Collector-flange capacitance C cf typ. 3 pF

Philips Semiconductors Product specification HF/VHF power transistor BLW78 Fig.4 Typical values; Tj=2 5°C. handbook, halfpage 05 1 0 MGP545 hFE IC (A) 5 V VCE = 28 V Fig.5 IE =I e = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 02 0 4 0 600 400 MGP546 200 typ C c (pF) VCB (V) Fig.6 Typical values; f = 100 MHz; Tj=2 5°C. handbook, full pagewidth 750 01 0 5 20 MGP547 250 500 VCB = 28 V 20 V fT (MHz) −IE (A)

Philips Semiconductors Product specification HF/VHF power transistor BLW78

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =2 5°C List of components: Note 1. ATC means American Technical Ceramics. f (MHz) V CE (V) P L (W) P D (W) η (%) zi(Ω ) ZL (Ω ) 150 28 100 ≤ 25 ≥ 70 0,74 + j1,35 4,30 + j0,60 C1 = C2 = C7 = C8 = 5 to 100 pF film dielectric trimmer C3 = 203 pF; 2× 82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC(1)) in parallel C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC(1)) C5 = 1 nF feed-through capacitor C6 = 100 nF polyester capacitor L1 = strip (30 mm× 8 mm); bent to form inverted ‘U’ shape with top 15 mm above heatsink, and bottom 5 mm above heatsink L2 = 1µH r.f. choke L3 = strip; shape as shown in Fig.8; 5 mm above heatsink L4 = strip (40 mm× 8 mm); bent in form , 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink L5 = strip (75 mm long; width 8 mm); 5 mm above base L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm. Heatsink: aluminium; 0,9 K/W At P L = 100 W and VCE = 28 V, the output power at heatsink temperatures between 25°C and 90°C relative to that at 25 °C is diminished by typ. 0,12 W/K. Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8. Fig.7 Test circuit; c.w. class-B; f = 150 MHz. handbook, full pagewidth MGP548 50 Ω 50 Ω C2 L2 +VCC L1 T.U.T.

Philips Semiconductors Product specification HF/VHF power transistor BLW78 Fig.8 Component layout on an aluminium heatsink for 150 MHz test circuit.⊗ Earthing bolts. handbook, full pagewidth MGP549 input 50 Ω aluminium heatsink output 50 ΩC4

Philips Semiconductors Product specification HF/VHF power transistor BLW78 Fig.9 V CE = 28 V; f = 150 MHz; Th =2 5°C. handbook, halfpage 02 0 4 0 150 100 MGP550 typ PL (W) PS (W) Fig.10 VCE = 28 V; f = 150 MHz; Th =2 5°C; typical values. handbook, halfpage 0 50 100 150 100 MGP551 η (%) G p (dB) η G p PL (W) f = 150 MHz; VCE =2 8V ; R th mb-h= 0,2 K/W. The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. handbook, halfpage150 100 MGP552 11 0 1 0 2 VSWR PLnom (W) (VSWR = 1) Th ≤ 70 °C ≤ 90 °C

Philips Semiconductors Product specification HF/VHF power transistor BLW78 OPERATING NOTE Below 50 MHz a base-emitter resistor of 4,7Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. Fig.12 Input impedance (series components). handbook, halfpage 0 100 200 MGP553 ri xi xi ri ri, xi (Ω ) f (MHz) VCE = 28 V; PL = 100 W; Th =2 5°C; typical values; class-B operation. Fig.13 Load impedance (series components). handbook, halfpage 0 100 200 MGP554 R L, XL (Ω ) f (MHz) R L XL VCE = 28 V; PL = 100 W; Th =2 5°C; typical values; class-B operation. Fig.14 handbook, halfpage 0 100 200 MGP555 G p (dB) f (MHz) typ VCE = 28 V; PL = 100 W; Th =2 5°C; typical values; class-B operation.

Philips Semiconductors Product specification HF/VHF power transistor BLW78 VCE =2 6V ; Th =4 0°C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W G p dB IC A dB handbook, full pagewidth 50 Ω MGP556 50 Ω R2 R4 BD136 BY206 T.U.T. C11 C10 C8 C12 C13 C4C3 R1 R8 C7 C14 +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW78 List of components: C1 = 33 pF ceramic capacitor (500 V) C2 = 100 pF air dielectric trimmer (single insulated rotor type) C3 = 280 pF air dielectric trimmer (single non-insulated rotor type) C4 = 180 pF polystyrene capacitor C5 = C6 = C7 = 3,9 nF ceramic capacitor C8 = 2× 33 pF ceramic capacitors in parallel (500 V) C9 = 330 nF polyester capacitor C10 = 82 pF ceramic capacitor (500 V) C11 = 100 pF air dielectric trimmer (single insulated rotor type) C12 = 180 pF air dielectric trimmer (single non-insulated rotor type) C13 = 150 pF polystyrene capacitor C14 = 390 nF polyester capacitor L1 = 72 nH; 3 turns Cu wire (1,0 mm); int. dia. 7 mm; length 4,8 mm; leads 2× 5 mm L2 = Cu strip (28 mm× 5m m × 0,2 mm); 18 mm at 3 mm above printed-circuit board L3 = Ferroxcube choke coil (cat. no. 4312 020 36640) L4 = 300 nH; 6 turns Cu wire (1,5 mm); int. dia. 12 mm; length 16 mm; leads 2× 5 mm L5 = 330 nH; 7 turns Cu wire (1,5 mm); int. dia. 12 mm; length 20,8 mm; leads 2× 5 mm R1 = 1,5 kΩ (± 5%) carbon resistor (0,5 W) R2 = 100Ω (± 5%) carbon resistor (0,5 W) R3 = 68Ω (± 5%) carbon resistor (0,5 W) R4 = 100Ω wirewound potentiometer R5 = 33Ω (± 5%) carbon resistor (0,5 W) R6 = 0,68Ω (± 10%) wirewound resistor (7 W) R7 = 120Ω wirewound resistor (8 W) R8 = 10Ω (± 10%) carbon resistor (0,5 W)

Philips Semiconductors Product specification HF/VHF power transistor BLW78 Fig.16 Intermodulation distortion as a function of output power; VCE = 26 V; IC =3A ; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =4 0°C. handbook, halfpage 05 0 −30 −50 −60 −40 MGP557 (dB) typ P.E.P. (W)

Philips Semiconductors Product specification HF/VHF power transistor BLW78 VCE = 28 V; Th =2 5°C; f1 = 28,000 MHz; f2 = 28,001 MHz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. List of components: OUTPUT POWER W G p dB ηdt IC A d3(1) dB d5(1) dB IC(ZS) mA C1 = C11 = 150 pF air dielectric trimmer (single insulated rotor type) C2 = 27 pF ceramic capacitor (500 V) C3 = C12 = 150 pF air dielectric trimmer (single non-insulated rotor type) C4 = 180 pF ceramic capacitor (500 V) C5 = C8 = 3,9 nF ceramic capacitor C6 = 150µF/6 V solid tantalum capacitor C7 = 150 pF ceramic capacitor (500 V) C9 = 100 nF polyester capacitor C10 = 750 pF mica dielectric trimmer (single insulated rotor type) C13 = 750 pF mica dielectric trimmer (single non-insulated rotor type) L1 = 3 turns enamelled Cu wire (1,0 mm); int. dia. 12 mm; length 12 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 3 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 12 mm L4 = 2 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 8 mm R1 = 27Ω (± 10%) carbon resistor (0,5 W) R2 = 4,7Ω (± 10%) carbon resistor (0,5 W) handbook, full pagewidth 50 Ω MGP558 50 Ω C9 R2 T.U.T. C11 C13C12 temperature compensated bias (Ri < 0.1 Ω ) C10 +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW78 Fig.18 Intermodulation distortion(1) as a function of output power. handbook, halfpage 0 50 100 −20 −50 −30 MGP559 −40 d3, d5 (dB) P.E.P. (W) Typical values; VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C. Fig.19 Power gain as a function of frequency. handbook, halfpage30 MGP560 G p (dB) f (MHz)11 0 1 0 2 VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.); Th =2 5°C; ZL = 2,7Ω . Figs 19 and 20 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Fig.20 Input impedance (series components). VCE = 28 V; IC(ZS) = 50 mA; PL = 100 W (P.E.P.); Th =2 5°C; ZL = 2,7Ω . handbook, halfpage10 −10 MGP561 ri (Ω) xi (Ω) xi f (MHz)11 0 1 0 2 ri

Philips Semiconductors Product specification HF/VHF power transistor BLW78 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power transistor BLW78 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.