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BLW77 PHILIPS

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Product speciﬁcation August 1986 DISCRETE SEMICONDUCTORS BLW77 HF/VHF power transistor

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched h FE groups. The transistor has a1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h = 25°C Note 1. At 130 W P.E.P. MODE OF OPERATION V CE V IC(ZS) A f MHz PL W G p dB η dB s.s.b. (class-AB) 28 0,1 1,6 − 28 15 − 130 (P.E.P.) c.w. (class-B) 28 − 87,5 130 typ. 7,5 typ. 75 − PIN CONFIGURATION Fig.1 Simplified outline. SOT121B. handbook, halfpage MLA876 PINNING - SOT121B. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value V CESM max. 70 V Collector-emitter voltage (open base) V CEO max. 35 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 12 A Collector current (peak value); f> 1 MHz I CM max. 30 A R.F. power dissipation (f> 1 MHz;); Tmb = 25°CP rf max. 245 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP521 102 11 0 1 0 2 IC (A) VCE (V) Tmb = 25 °CTh = 70 °C I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE ≤ 28 V; f≥ 1 MHz. handbook, halfpage Prf (W) 50 100 300 100 200 MGP522 Th (°C) ΙΙΙ ΙΙ Ι derate by 1.11 W/K derate by 0.82 W/K THERMAL RESISTANCE (dissipation = 100 W; Tmb =9 0°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 1,03 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 0,71 K/W From mounting base to heatsink R th mb-h = 0,2 K/W

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. Collector-emitter breakdown voltage VBE = 0; IC = 50 mA V (BR) CES > 70 V Collector-emitter breakdown voltage open base; IC = 100 mA V (BR) CEO > 35 V Emitter-base breakdown voltage open collector; IE = 20 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 35 V I CES < 20 mA D.C. current gain(1) IC = 7 A; VCE =5 V h FE 15 to 80 D.C. current gain ratio of matched devices(1) IC = 7 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 20 A; IB =4 A V CEsat typ. 2 V Transition frequency at f = 100 MHz(2) −IE = 7 A; VCB = 28 V f T typ. 320 MHz −IE = 20 A; VCB = 28 V f T typ. 300 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 28 V C c typ. 255 pF Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V C re typ. 175 pF Collector-ﬂange capacitance C cf typ. 3 pF Fig.4 Typical values; VCE = 20 V. handbook, halfpage 1.50.5 1 10−1 10−2 MGP523 VBE (V) IC (A) Th = 70 °C 25 °C

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 Fig.5 Typical values; Tj=2 5°C. handbook, halfpage 0 10 20 30 MGP524 hFE IC (A) 5 V VCE = 28 V Fig.6 IE =Ie = 0; f = 1 MHz; Tj= 25°C. handbook, halfpage C c (pF) 20 40 1500 500 1000 MGP525 VCB (V) typ Fig.7 VCB = 28 V; f = 100 MHz; Tj=2 5°C. handbook, full pagewidth 400 05 1 5 MGP526 10 −IE (A) 200 fT (MHz) typ

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77

APPLICATION INFORMATION

VCE = 28 V; Th = 25°C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER G p ηdt (%) I C (A) d 3 d5 IC(ZS) W dB at 130 W P.E.P. dB dB A handbook, full pagewidth 50 Ω MGP527 50 Ω C10 R7 T.U.T. BD228 BD443 C13 C12C11 C14 C15 C4 R2 R5 R1 R4 +VCC

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 List of components: C1 = 27 pF ceramic capacitor (500 V) C2 = 100 pF air dielectric trimmer (single insulated rotor type) C3 = 180 pF polystyrene capacitor C4 = C6 = C9 = 100 nF polyester capacitor C5 = 100 pF air dielectric trimmer (single non-insulated rotor type) C7 = C8 = 3,9 nF ceramic capacitor C10 = 2,2 µF moulded metallized polyester capacitor C11 = 2 × 180 pF polysterene capacitors in parallel C12 = 3 × 56 pF and 33 pF ceramic capacitors in parallel (500 V) C13 = 4 × 56 pF and 68 pF ceramic capacitors in parallel (500 V) C14 = 360 pF air dielectric trimmer (single insulated rotor type) C15 = 360 pF air dielectric trimmer (single non-insulated rotor type) L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2× 7 mm L2 = L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = L5 = 80 nH; 2,5 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 10,0 mm; leads 2× 7m m R1 = 470 Ω wirewound resistor (5,5 W) R2 = 4,7 Ω wirewound potentiometer (3 W) R3 = 0,55 Ω ; parallel connection of 4× 2,2Ω carbon resistors (± 5%; 0,5 W each) R4 = 45 Ω ; parallel connection of 4× 180 Ω wirewound resistors (5,5 W each) R5 = 56 Ω (± 5%) carbon resistor (0,5 W) R6 = 27 Ω (± 5%) carbon resistor (0,5 W) R7 = 4,7 Ω (± 5%) carbon resistor (0,5 W)

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. Fig.9 Intermodulation distortion as a function of output power.(1.) VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25°C; typical values. handbook, halfpage 0 10050 150 −20 d3, d5 (dB) −60 −40 MGP528 P.E.P. (W) Fig.10 Double-tone efficiency and power gain as a function of output power. VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25°C; typical values. handbook, halfpage 0 50 100 150 ηdt (%) MGP529 P.E.P. (W) ηdt G p (dB) G p

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 Fig.11 Power gain as a function of frequency. VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25°C; ZL = 2,5Ω . handbook, halfpage40 MGP530 11 0 1 0 2 G p (dB) f (MHz) Fig.12 Input impedance (series components) as a function of frequency. VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th = 25°C; ZL = 2,5Ω . handbook, halfpage5 MGP531 11 0 1 0 2 2.5 ri (Ω ) xi (Ω ) f (MHz) xi ri Figs 11 and 12 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation.

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 Fig.13 Power gain as a function of frequency. VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th =2 5°C; ZL = 2,5Ω ; neutralizing capacitor: 150 pF. handbook, halfpage30 MGP533 11 0 1 0 2 f (MHz) G p (dB) Fig.14 Input impedance (series components) as a function of frequency. VCE = 28 V; IC(ZS) = 100 mA; PL = 130 W; Th =2 5°C; ZL = 2,5Ω ; neutralizing capacitor: 150 pF. handbook, halfpage7.5 MGP534 11 0 1 0 2 2.5 ri (Ω ) f (MHz) xi ri xi (Ω ) 13 and 14 are typical curves and hold for a push-pull amplifier with cross-neutralization in s.s.b class-AB operation.

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Rth mb-h= 0,2 K/W. The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. handbook, halfpage250 100 MGP532 11 0 1 0 2 150 200 PLnom (W P.E.P.) (VSWR = 1) VSWR 90 °C Th = 50 °C 70 °C

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =2 5°C List of components: Component layout and printed-circuit board for 87,5 MHz test circuit are shown in Fig.17. f (MHz) V CE (V) P L (W) P S (W) G p (dB) I C (A) η (%) zi(Ω ) YL (mS) 87,5 28 130 typ.23,2 typ.7,5 typ.6,2 typ.75 0,62 + j0,73 273 −j42 C1 = 4 to 40 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07008) C2 = C9 = C10 = 7 to 100 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07015) C3 = C8 = 22 pF ceramic capacitor (500 V) C4 = 4 × 82 pF ceramic capacitors in parallel (500 V) C5 = 390 pF polystyrene capacitor C6 = 220 nF polyester capacitor C7a = 2 × 10 pF ceramic capacitors in parallel (500 V) C7b = 2 × 8,2 pF ceramic capacitors in parallel (500 V) L1 = 25 nH; 2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 4,6 mm; leads 2× 5 mm L2 = L5 = 2,4 nH; strip (12 mm × 6 mm); tap for L4 and L6 at 5 mm from transistor L3 = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2× 5 mm L6 = 46 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,0 mm; leads 2× 5 mm L8 = 44 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,7 mm; leads 2× 5 mm L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy ﬁbre-glass dielectric. R1 = 10 Ω (± 10%) carbon resistor R2 = 10 Ω (± 10%) carbon resistor Fig.16 Test circuit; c.w. class-B. handbook, full pagewidth 50 Ω 50 Ω MGP535 /,/, /,/, /,/, C2 C3 C4 C6 R2 C7ab C10 L1 L2 L5 L8 T.U.T. +VCC

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. Fig.17 Component layout and printed-circuit board for 87,5 MHz test circuit. handbook, full pagewidth MGP536 116 C2 C3 C4 R1 C6 C10 +VCCR2 C7b C7aL4 L7L3 rivet strip L2 L5

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 Fig.18 VCE = 28 V; f = 87,5 MHz; Th =2 5°C. handbook, halfpage 02 5 5 0 7 5 250 200 MGP537 PS (W) 150 100 PL (W) typ Fig.19 VCE = 28 V; f = 87,5 MHz; Th =2 5°C; typical values. handbook, halfpage 0 100 200 300 PL (W) G p (dB) 100 η (%) MGP538 η G p f = 87,5 MHz; VCE = 28 V; R th mb-h= 0,2 K/W. The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. handbook, halfpage175 MGP539 11 0 1 0 2 125 PLnom (W) (VSWR = 1) Th = 50 °C 70 °C 90 °C VSWR

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 Fig.21 VCE = 28 V; PL =130 W; Th =2 5°C; typical values. handbook, halfpage 0 100 200 ri, xi (Ω ) MGP540 f (MHz) xi ri Fig.22 VCE = 28 V; PL =130 W; Th =2 5°C; typical values. handbook, halfpage 0 100 200 −10 0.5 −0.5 MGP541 f (MHz) R L (Ω ) C L (nF) R L C L Fig.23 VCE = 28 V; PL =130 W; Th =2 5°C. handbook, halfpage 0 50 100 150 G p (dB) f (MHz) MGP542 typ

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product speciﬁcation HF/VHF power transistor BLW77 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the speciﬁcation.

Product Information

BLW77 specifications and overview.

Summary

HF/VHF power transistor August 1986

Description

HF/VHF power transistor August 1986

Source title BLW77 Datasheet(PDF) - NXP Semiconductors

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