BLV99 PHILIPS | Alldatasheet
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Technical content
Product specification September 1991 DISCRETE SEMICONDUCTORS BLV99/SL UHF power transistor
Philips Semiconductors Product specification UHF power transistor BLV99/SL
FEATURES
- Emitter-ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. PINNING - SOT172D PIN DESCRIPTION 1 emitter 2 base 3 collector 4 emitter PIN CONFIGURATION QUICK REFERENCE DATA RF performance at Tmb = 25°C in a common emitter class-B test circuit. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. MODE OF OPERATION f (MHz) V CE (V) PL (W) G p (dB) ηc (%) c.w. narrow band 900 24 2 > 8 > 55 handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB007Top view
Philips Semiconductors Product specification UHF power transistor BLV99/SL LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC collector current DC value − 200 mA ICM collector current peak value f> 1 MHz − 600 mA Ptot total power dissipation f > 1 MHz; Tmb =5 0°C − 6W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb(RF) from junction to mounting base P L = 4.5 W; Tmb =2 5°C 20 K/W Fig.2 Power/temperature derating curves. (I) Continuous RF operation. (II) Short time operation during mismatch. handbook, halfpage 0 40 80 160 Th (°C) Ptot (W) 120 MBK466 Ι ΙΙ
Philips Semiconductors Product specification UHF power transistor BLV99/SL CHARACTERISTICS Tj = 25°C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 50 −− V V(BR)CEO collector-emitter breakdown voltage VBE =0 ; IC = 10 mA 27 −− V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 3.5 −− V ICES collector-emitter leakage current VBE =0 ; VCE = 27 V −− 2m A hFE DC current gain V CE = 20 V; IC = 150 mA 25 −− ESBR second breakdown energy L = 25 mH; R BE = 10Ω ; f = 50 Hz 0.5 −− mJ C c collector capacitance V CB = 24 V; IE = Ie =0 ; f = 1 MHz − 3 − pF C re feedback capacitance V CE = 24 V; IC = 0; f = 1 MHz − 1.3 − pF Fig.3 DC current gain as a function of collector current, typical values. VCE = 20 V; Tj=2 5°C. handbook, halfpage 0 0.5 IC (A) hFE 100 0.1 0.2 0.3 0.4 MBK467 Fig.4 Collector capacitance as a function of collector-base voltage, typical values. IE =ie = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 3 0 VCB (V) C c (pF) MBK468
Philips Semiconductors Product specification UHF power transistor BLV99/SL
APPLICATION INFORMATION
RF performance Tmb = 25°C in a common emitter class-B test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) G p (dB) ηc (%) c.w. narrow band 900 24 2 > 8 typ. 9.3 > 55 typ. 63 Fig.5 Gain and efficiency as functions of load power, typical values. Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25°C. handbook, halfpage10 01 3 PL (W) G p (dB) G p ηC (%) ηC 100 MBK469 Ruggedness in class-B operation The BLV99/SL is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: V CE = 24 V, f = 900 MHz, Tmb =2 5°C, and rated output power. Fig.6 Load power as a function of drive power, typical values. Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25°C. handbook, halfpage 0.1 0.2 0.4 PS (W) PL (W) 0.3 MBK470
Philips Semiconductors Product specification UHF power transistor BLV99/SL List of components (see test circuit) Notes 1. American Technical Ceramics type 100A or capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness1⁄32 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C8, C9 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C2 multilayer ceramic chip capacitor (note 1) 4.7 pF C4, C6, C10 multilayer ceramic chip capacitor 220 pF C5 63 V electrolytic capacitor 1 µF C7 multilayer ceramic chip capacitor (note 1) 2.2 pF L1 stripline (note 2) 50 Ω 48 mm × 2.4 mm L2 7 turns enamelled 0.4 mm copper wire 50 nH int. dia. 2 mm; leads 2× 5 mm L3, L7 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L4, L5 stripline (note 2) 35 Ω 14 mm × 4 mm; L6 6 turns enamelled 1 mm copper wire 120 nH int. dia. 6 mm; length 10 mm; leads 2× 5 mm L8 stripline (note 2) 50 Ω 31 mm × 2.4 mm L9 stripline (note 2) 50 Ω 29 mm × 2.4 mm R1, R2 0.4 W metal film resistor 10 Ω , 5% Fig.7 Class-B test circuit at f = 900 MHz. handbook, full pagewidth MDA559 T.U.T. L1 L8 L9L4 L2 L6 R1 L3 C6C5C4 C10 50 Ω +VCC /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/,/, /,/,/,/,/,/,/, 50 Ω C3 C9C8
Philips Semiconductors Product specification UHF power transistor BLV99/SL Fig.8 Component layout for 900 MHz class-B test circuit. The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws, hollow rivets and copper straps under the emitters. handbook, full pagewidth 170 mm C2L1 L4 L5 L8 C10 C4 L7 C3C1 C8 C9 70 mm MDA560 +VCC rivets
Philips Semiconductors Product specification UHF power transistor BLV99/SL Fig.9 Input impedance (series components) as a function of frequency, typical values. Class-B operation; VCE = 24 V; PL = 2 W; Tmb =2 5°C. handbook, halfpage 800 850 900 1000 f (MHz) ri, xi (Ω ) ri xi 950 MBK471 Fig.10 Load impedance (series components) as a function of frequency , typical values. Class-B operation; VCE = 24 V; PL = 2 W; Tmb =2 5°C. handbook, halfpage 800 850 900 1000 f (MHz) R L, XL (Ω ) R L XL 950 MBK472 Fig.11 Definition of transistor impedance. handbook, halfpage MBA451 Zi ZL Fig.12 Power gain as a function of frequency, typical values. Class-B operation; VCE = 24 V; PL = 2 W; Tmb =2 5°C. handbook, halfpage 800 850 900 1000 f (MHz) G p (dB) 950 MBK473
Philips Semiconductors Product specification UHF power transistor BLV99/SL PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT172D 97-06-28 H b H 0 5 10 mm scale Q A D D 1 c Studless ceramic package; 4 leads SOT172D UNIT A mm Db 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 1.15 0.88 3.71 2.89 c D 1 H 26.17 24.63 inches 0.13 0.12 0.035 0.025 0.006 0.004 0.205 0.195 0.210 0.200 0.045 0.035 0.146 0.114 1.03 0.97 Q DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Philips Semiconductors Product specification UHF power transistor BLV99/SL DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.