BLV98CE PHILIPS | Alldatasheet

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Technical content

Product specification March 1993 DISCRETE SEMICONDUCTORS BLV98CE UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLV98CE

FEATURES

  • Internal input matching to achieve high power gain
  • Implanted ballasting resistors an for optimum temperature profile
  • Gold metallization ensures excellent reliability

DESCRIPTION

NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to T h =2 5°C in a common emitter class-AB circuit. MODE OF OPERATION f (MHz) V CE (V) P L (W) G P (dB) ηc (%) c.w. class-AB 960 24 15 > 7.5 > 50 PINNING - SOT171A PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter Fig.1 Simplified outline and symbol. handbook, halfpage MAM141Top view e c b WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

Philips Semiconductors Product specification UHF power transistor BLV98CE LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector base voltage open emitter − 50 V VCEO collector emitter voltage open base − 27 V VEBO emitter base voltage open collector − 3.5 V IC collector current DC or average − 1.5 A ICM collector current peak value f> 1 MHz − 4.5 A Ptot total power dissipation f > 1 MHz Tmb =2 5°C − 40 W Tstg storage temperature −65 150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R thj-mb from junction to mounting base (RF) − 4.4 K/W R th mb-h from mounting base to heatsink − 0.4 K/W Fig.2 DC SOAR. handbook, halfpage10 10−1 MDA449 11 0 VCE (V) IC (A) 102 Tmb = 25 °C Th = 70 °C Fig.3 Power/temperature derating. handbook, halfpage Ptot (W) 80 160 120 MDA450 Th (°C) (1) (2) (1) DC or RF operation (2) short-term operation during mismatch

Philips Semiconductors Product specification UHF power transistor BLV98CE CHARACTERISTICS at Tj=2 5°C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter IC = 25 mA 50 −− V V(BR)CEO collector-emitter breakdown voltage open base IC = 50 mA 27 −− V V(BR)EBO emitter-base breakdown voltage open collector IE = 5 mA 3.5 −− V ICES collector leakage current V BE =0 VCE = 27 V −− 5m A hFE DC current gain I C =1 A VCE = 20 V 15 −− C c collector capacitance at f = 1 MHz IE =Ie =0 VCB = 24 V − 23 − pF C re feedback capacitance at f = 1 MHz I C =0 VCE = 24 V − 14 − pF C cf collector-flange capacitance − 2 − pF Fig.4 DC current gain as a function of collector current; typical values. handbook, halfpage 012 hFE IC (A) 100 MDA451 VCE = 24 V 20 V Fig.5 Output capacitance as a function of VCB ; typical values. handbook, halfpage 01 0 VCB (V) C c (pF) 20 30 100 MDA452

Philips Semiconductors Product specification UHF power transistor BLV98CE

APPLICATION INFORMATION

RF performance in a common emitter test circuit. Th =2 5°C, Rth mb-h= 0.4 K/W unless otherwise specified. MODE OF OPERATION f (MHz) V CE (V) I C(ZS) (mA) P L (W) G P (dB) ηc (%) c.w. class-AB 960 24 30 15 > 7.5 typ. 8.5 > 50 typ. 55 Fig.6 Power gain and efficiency as a function of load power; typical values. handbook, halfpage 02 5 51 0 100 G p (dB) MDA453 PL (W) G p η η (%) Ruggedness in class-AB operation The BLV98CE is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: V CE = 24 V, IC(ZS) = 30 mA, f = 960 MHz at rated output power. Fig.7 Load power as a function of input power; typical values. handbook, halfpage PS (W) PL (W) 48 6 MDA454

Philips Semiconductors Product specification UHF power transistor BLV98CE Fig.8 Test circuit BLV98CE class-AB. handbook, full pagewidth MDA455 D.U.T. L1 L2 L3 L10 L11 L12 L13L4 L9 C6 C8 VB C11 C14 C10C9 C17 50 Ω output VCC /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, C150 Ω input C3 C4 C12 C13 C15 C16

Philips Semiconductors Product specification UHF power transistor BLV98CE List of components(Fig.8) Notes 1. ATC capacitor type 100A or capacitor of the same quality. 2. ATC capacitor type 100B or capacitor of the same quality. 3. The microstrips are on a double copper-clad PCB with PTFE fibre-glass dielectric (ε r = 2.2); thickness1⁄32 inch. DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C6, C7, C8,C17 multilayer ceramic chip capacitor 330 pF C2, C3, C15, C16 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C4, C5 multilayer ceramic chip capacitor note 1 4.3 pF C9 35 V solid aluminium capacitor 2.2 µF 2222 128 50228 C10 multilayer ceramic chip capacitor 3 × 100 nF in parallel C11, C12 multilayer ceramic chip capacitor note 1 5.6 pF C13, C14 multilayer ceramic chip capacitor note 2 5.1 pF L1, L13 microstrip note 3 50 Ω 9.0× 2.4 mm L2, L12 microstrip note 3 50 Ω 23.0× 2.4 mm L3 microstrip note 3 50 Ω 16.0× 2.4 mm L4 microstrip note 3 43 Ω 3.0× 3.0 mm L5 3 turns enamelled 0.8 mm copper wire int. dia. 3 mm length 5 mm leads 2× 5m m L6, L8 grade 3B ferroxcube wide-band RF choke 4312 020 36642 L7 4 turns enamelled 0.8 mm copper wire int. dia. 4 mm length 5 mm leads 2× 5m m L9 microstrip note 3 43 Ω 3.5× 3.0 mm L10 microstrip note 3 43 Ω 11.0× 3.0 mm L11 microstrip note 3 50 Ω 4.5× 2.4 mm R1, R2 0.4 W metal film resistor 10 Ω 2322 151 71009

Philips Semiconductors Product specification UHF power transistor BLV98CE Fig.9 Printed circuit board and component layout for 960 MHz test circuit. handbook, full pagewidth 122 mm C7 L6 C10 C3C3 C16 C17 C15 L1C1 L2 L3 R2C8 L7L5 C5 C12 C13 C11 L10 L12L11 L13 rivetsrivets rivets copper straps copper straps copper straps copper straps rivets 70 mm MDA456 rivetsrivets The circuit and components are located on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters, to provide a direct contact between the component side and the ground plane.

Philips Semiconductors Product specification UHF power transistor BLV98CE Fig.10 Input impedance; series components; VCE = 24 V; PL = 15 W; R th mb-h= 0.4 K/W; typical values. handbook, halfpage 800 850 ri f (MHz) Zi (Ω ) 900 1000 950 MDA457 xi Fig.11 Load impedance; series components; VCE = 24 V; PL = 15 W; Rth mb-h= 0.4 K/W; typical values. handbook, halfpage 800 850 XL R L f (MHz) ZL (Ω ) 900 1000 950 MDA458 Fig.12 Power gain; class-AB operation; VCE = 24 V; PL = 15 W; Rth mb-h= 0.4 K/W; typical values. handbook, halfpage 800 850 900 G p (dB) f (MHz) 1000 950 MDA459

Philips Semiconductors Product specification UHF power transistor BLV98CE PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT171A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT171A U 2 EE1H Q D D 1 A F c A b Mw 3 H 1 M Cw 2 e U 1 q p C w 1 ABM B UNIT A mm Db 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 D 1 9.30 8.99 E 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c E1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 9.27 9.01 p 3.43 3.17 Q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLV98CE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.