BLV93

BLV93 PHILIPS | Alldatasheet

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Product specification March 1993 DISCRETE SEMICONDUCTORS BLV93 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLV93

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

FEATURES

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile
• internal input matching to achieve an optimum wideband capability and high power gain
• gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance at T h =2 5°C in a common-emitter class-B test circuit MODE OF OPERATION V CE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 900 8 > 6,5 > 50 9,6 900 6 typ. 6,0 typ. 59 PINNING - SOT171A PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter Fig.1 Simplified outline and symbol. handbook, halfpage MAM141Top view e c b WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

Philips Semiconductors Product specification UHF power transistor BLV93 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value V CBOM max. 36 V Collector-emitter voltage (open base) V CEO max. 16 V Emitter-base voltage (open collector) V EBO max. 3 V Collector current d.c. or average I C ; IC AV max. 1,6 A (peak value); f> 1 MHz I CM max. 4,8 A Total power dissipation at Tmb =6 7°CP tot(dc) max. 18 W at Tmb =6 7°C; f > 1 MHz P tot(rf) max. 24 W Storage temperature T stg −65 to+150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. R th mb-h= 0,4 K/W handbook, halfpage 10−1 MDA422 11 0 VCE (V) IC (A) 102 Th = 60 °C Fig.3 Power/temperature derating curves. I Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz) handbook, halfpage II I 50 100 Ptot (W) Th (°C) 200 150 MDA423 III THERMAL RESISTANCE Dissipation = 12 W; Tmb = 112°C From junction to mounting base (d.c. dissipation) R th j-mb(dc) max. 7,0 K/W (r.f. dissipation) R th j-mb(rf) max. 5,2 K/W From mounting base to heatsink R th mb-h max. 0,4 K/W

Philips Semiconductors Product specification UHF power transistor BLV93 CHARACTERISTICS Tj=2 5°C unless otherwise specified Note 1. Measured under pulse conditions: tp = 50µs;δ < 1%. Collector-base breakdown voltage open emitter; IC = 20 mA V (BR)CBO > 36 V Collector-emitter breakdown voltage open base; IC = 40 mA V (BR)CEO > 16 V Emitter-base breakdown voltage open collector; IE = 2 mA V (BR)EBO > 3V Collector cut-off current VBE = 0; VCE = 16 V I CES < 10 mA Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR > 2m J D.C. current gain IC = 1,2 A; VCE = 10 V h FE > 25 Transition frequency at f = 500 MHz(1) −IE = 1,2 A; VCE = 12,5 V f T typ. 4 GHz Collector capacitance at f = 1 MHz IE =ie = 0; VCB = 12,5 V C c typ. 15 pF Feed-back capacitance at f = 1 MHz IC = 0; VCE = 12,5 V C re typ. 9 pF Collector-flange capacitance C cf typ. 2 pF Fig.4 Tj=2 5°C; typical values. handbook, halfpage 012 hFE IC (A) 100 MDA424 12.5 V VCE = 10 V Fig.5 V CB = 12,5 V; f = 500 MHz; Tj=2 5°C; typical values. handbook, halfpage 0 −4 −0.8 −1.6 −2.4 fT (GHz) −3.2 MDA425 IE (A)

Philips Semiconductors Product specification UHF power transistor BLV93

APPLICATION INFORMATION

V PL W PS W G p dB IC A ηC narrow band; c.w. 12,5 8 < 1,8 > 6,5 < 1,28 > 50 typ. 1,5 typ. 7,3 typ. 1,1 typ. 58 9,6 6 typ. 1,5 typ. 6,0 typ. 1,05 typ. 59 Fig.6 IE =ie = 0; f = 1 MHz; typical values. handbook, halfpage 04 2 0 81 21 6 MDA426 C c (pF) VCB (V)

Philips Semiconductors Product specification UHF power transistor BLV93 List of components: Note 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. C1 = C12 = 33 pF multilayer ceramic chip capacitor C2 = C3 = C10 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C4 = C5 = 4,7 pF multilayer ceramic chip capacitor(1) C6 = C7 = 5,6 pF multilayer ceramic chip capacitor(1) C8 = C9 = 3,3 pF multilayer ceramic chip capacitor(1) C13 = 10 pF ceramic feed-through capacitor C14 = 6,8 µF (63 V) electrolytic capacitor C15 = 330 pF ceramic feed-through capacitor L1 = L7 = 50 Ω stripline (29,0× 2,4 mm) L2 = 50 Ω stripline (6,0 mm× 2,4 mm) L3 = 42,7 Ω stripline (13,1 mm× 3,0 mm) L4 = 42,7 Ω stripline (4,4 mm× 3,0 mm) L5 = 42,7 Ω stripline (4,6 mm× 3,0 mm) L6 = 50 Ω stripline (11,0× 2,4 mm) L8 = 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2× 5 mm L9 = 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia 4 mm; leads 2× 5 mm L10 = L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) R1 = R2 = 10 Ω± 10%; 0,25 W, metal film resistor L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric r = 2,2); thickness1⁄32 inch. Fig.7 Class-B test circuit at f = 900 MHz. handbook, full pagewidth MBK458 /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/,/, /,/,/,/,/,/,/, T.U.T. L1 L2C1 L4 L5 L11 L3 L6 L7 C12 C11 50 Ω50 Ω +VCC C10 C8C6 C4 C9 R1 L10 L8 L9 C13 C14 C15 C3 C7

Philips Semiconductors Product specification UHF power transistor BLV93 Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit. handbook, full pagewidth +VCC 124 mm 80 mm MBK459 C3C3 L1 L3 L6 L4 C12 copper straps L10 L8 L9 C13 C14 L11R2 C15 C11C10C9 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane.

Philips Semiconductors Product specification UHF power transistor BLV93 Fig.9 Load power vs. source power. VCE = 9,6 V; f = 900 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage PS (W) PL (W) MDA427 Fig.10 Power gain and efficiency vs. load power. VCE = 9,6 V; f = 900 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 02 1 0 8 80 46 8 MDA428 G p (dB) PL (W) G p ηC ηC (%) Fig.11 Load power vs. source power. VCE = 12,5 V; f = 900 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 012 PS (W) PL (W) MDA429 Fig.12 Power gain and efficiency vs. load power. VCE = 12,5 V; f = 900 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 02 0 100 G p (dB) MDA430 PL (W) G p ηC ηC (%)

Philips Semiconductors Product specification UHF power transistor BLV93 RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and at T h =2 5°C. Fig.13 Input impedance (series components). VCE = 12,5 V; PL = 8 W; f = 800-960 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 800 1000 840 880 xi ri 920 Zi (Ω ) f (MHz) 960 MDA431 Fig.14 Load impedance (series components). VCE = 12,5 V; PL = 8 W; f = 800-960 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 800 1000 840 R L XL 880 920 ZL (Ω ) f (MHz) 960 MDA432 Fig.15 Power gain vs. frequency. VCE = 12,5 V; PL = 8 W; f = 800-960 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 800 850 900 G p (dB) f (MHz) 1000 950 MDA433

Philips Semiconductors Product specification UHF power transistor BLV93 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT171A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT171A U 2 EE1H Q D D 1 A F c A b Mw 3 H 1 M Cw 2 e U 1 q p C w 1 ABM B UNIT A mm Db 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 D 1 9.30 8.99 E 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c E1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 9.27 9.01 p 3.43 3.17 Q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLV93 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.