BLV90 PHILIPS | Alldatasheet

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Product specification February 1996 DISCRETE SEMICONDUCTORS BLV90 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLV90

DESCRIPTION

NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

FEATURES

  • diffused emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at T a =2 5°C in a common-emitter class-B circuit.(1) Note 1. Device mounted on a printed-circuit board (see Fig.6). MODE OF OPERATION VCE V f MHz PL W G p dB ηC Narrow band; CW 12.5 900 1 > 7.5 > 50 9.6 900 1 typ. 7.0 typ. 57 PIN CONFIGURATION Fig.1 Simplified outline. SOT172D. handbook, halfpage MSB007Top view PINNING - SOT172D. PIN DESCRIPTION 1 emitter 2 base 3 collector 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLV90 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Dissipation = 2.25 W Note 1. Device mounted on a printed-circuit board (see Fig.6). Collector-base voltage (open emitter) V CBO max. 36 V Collector-emitter voltage (open base) V CEO max. 16 V Emitter-base voltage (open collector) V EBO max. 3 V Collector current DC or average I C ; IC(AV) max. 0.2 A (peak value); f> 1 MHz I CM max. 0.6 A Total power dissipation f> 1 MHz; Tmb < 105 °CP tot(rf) max. 3.5 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C From junction to ambient(1) (f> 1 MHz) Ta =2 5°CR th j−a (RF) max. 60 K/W From junction to mounting base Tmb =2 5°C( f> 1 MHz) R th j-mb (RF) max. 19 K/W Fig.2 Power/temperature curve. I Continuous RF operation (f > 1 MHz) II Short-time RF operation during mismatch (f > 1 MHz) handbook, halfpage II I 40 80 Ptot(rf) (W) Tmb (°C) 160 120 MDA389

Philips Semiconductors Product specification UHF power transistor BLV90 CHARACTERISTICS Tj=2 5°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 2.5 mA V (BR)CBO > 36 V Collector-emitter breakdown voltage open base; IC = 10 mA V (BR)CEO > 16 V Emitter-base breakdown voltage open collector; IE = 0.5 mA V (BR)EBO > 3V Collector cut-off current VBE = 0; VCE = 16 V I CES < 1m A Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR > 0.3 mJ D.C. current gain IC = 0.15 A; VCE = 10 V h FE > 25 Collector capacitance at f = 1 MHz IE =ie = 0; VCB = 12.5 V C c typ. 1.8 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 12.5 V C re typ. 1.0 pF Collector-mounting base capacitance C c-mb typ. 0.5 pF Fig.3 Tj=2 5°C; typical values. handbook, halfpage 120 150 IC (mA) hFE 300 600 450 MDA390 VCE = 12.5 V 10 V Fig.4 IE =ie = 0; f = 1 MHz; typical values. handbook, halfpage 048 VCB (V) C c (pF) MDA391

Philips Semiconductors Product specification UHF power transistor BLV90

APPLICATION INFORMATION

RF performance in CW operation (common-emitter circuit, class-B): f = 900 MHz; Ta =2 5°C List of components: Notes 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. 2. Device mounted on a printed-circuit board (see Fig.6). MODE OF OPERATION V CE V PL W G p dB ηC narrow band; CW 12.5 1 > 7.5 > 50 typ. 9.0 typ. 60 9.6 1 typ. 7.0 typ. 57 C1 = C10 = 33 pF multilayer ceramic chip capacitor C2 = C9 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C4 = 5.6 pF multilayer ceramic chip capacitor (1) C5 = 10 pF multilayer ceramic chip capacitor C6 = 330 pF multilayer ceramic chip capacitor C7 = 3.9 pF multilayer ceramic chip capacitor (1) C8 = 1.2 to 3.5 pF film dielectric trimmer (cat. no. 2222 809 05001) L1 = L7 = 50 Ω stripline (30.8 mm× 2.4 mm) L2 = 60 nH; 4 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2× 5 mm L3 = 38 Ω stripline (16.0 mm× 3.5 mm) L4 = 38 Ω stripline (11.0 mm× 3.5 mm) L5 = 280 nH; 15 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2× 5 mm L6 = 50 Ω stripline (41.2 mm× 2.4 mm) L8 = L9 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642) R1 = R2 = 10 Ω ± 5%; 0.25 W metal film resistor L1, L3, L4, L6 and L7 are striplines on a double Cu-clad printed-circuit board with P.T.F.E. fibre-glass dielectric r = 2.2); thickness1⁄32 inch; thickness of copper-sheet 2× 35 µm. handbook, full pagewidth MDA392 /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, T.U.T. L1C1 R1 L8 C5 C6 L3 L6 L7 C10 50 Ω50 Ω +VCC C3 C8 Fig.5 Class-B test circuit at f = 900 MHz.

Philips Semiconductors Product specification UHF power transistor BLV90 Fig.6 Printed-circuit board and component lay-out for 900 MHz class-B test circuit. handbook, full pagewidth +VCC E L6L1 L4L3 C2 C3 C8 C9 C10 E BC 160 mm 80 mm MDA393 rivets copper straps The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane.

Philips Semiconductors Product specification UHF power transistor BLV90 Fig.7 Load power as a function of source power. handbook, halfpage 0 0.1 PL (W) PS (W)0.2 0.3 1.6 1.2 0.4 0.8 MDA394 f = 900 MHz; class-B operation; typical values.  Tmb = 25°C; VCE = 12.5 V; Fig.8 Power gain and efficiency as a function of load power. handbook, halfpage 0.4 120 PL (W) G p (dB) 0.8 1.6 1.2 MDA395 G p ηC (%) ηC f = 900 MHz; class-B operation; typical values.  Tmb = 25°C; VCE = 12.5 V; RUGGEDNESS The device is capable to withstand a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15.5 V at T a =2 5°C. Device mounted on a printed-circuit board (see Fig.6).

Philips Semiconductors Product specification UHF power transistor BLV90 Fig.9 Input impedance (series components). VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb =2 5°C; class-B operation; typical values. handbook, halfpage 800 1000 840 xi ri 880 920 Zi (Ω ) f (MHz) 960 MDA396 Fig.10 Load impedance (series components). VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb =2 5°C; class-B operation; typical values. handbook, halfpage 800 1000 840 XL R L 880 920 ZL (Ω ) f (MHz) 960 MDA397 Fig.11 Power gain as a function of frequency. VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb =2 5°C; class-B operation; typical values. handbook, halfpage 800 850 f (MHz) G p (dB) 900 1000 950 MDA563

Philips Semiconductors Product specification UHF power transistor BLV90 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT172D 97-06-28 H b H 0 5 10 mm scale Q A D D 1 c Studless ceramic package; 4 leads SOT172D UNIT A mm Db 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 1.15 0.88 3.71 2.89 c D 1 H 26.17 24.63 inches 0.13 0.12 0.035 0.025 0.006 0.004 0.205 0.195 0.210 0.200 0.045 0.035 0.146 0.114 1.03 0.97 Q DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLV90 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.