BLV862

BLV862 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1997 Oct 14

1999 Jun 25

UHF linear push-pull power transistor M3D091

1999 Jun 25 2

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862

FEATURES

• Double stage internal input and output matching networks for an optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound).

DESCRIPTION

NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. PINNING Notes 1. Collectors 1 and 2 are connected together internally. 2. Common emitters are connected to the flange. PIN SYMBOL DESCRIPTION 1 c1 collector 1; note 1 2 c2 collector 2; note 1 3 b1 base 1 4 b2 base 2 5 e common emitter; note 2 Fig.1 Simplified outline (SOT262B) and symbol. handbook, halfpage MAM031 e Top view QUICK REFERENCE DATA RF performance at Th =2 5°C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) G p (dB) ηC (%) ΔG p (dB) CW class-AB 860 28 150 ≥8 typ. 9 ≥45 typ. 52 ≤1 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Thermal resistance is determined under specified RF operating conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 25 A Ptot total power dissipation T mb =2 5°C − 350 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Ptot= 350 W; note 1 0.5 K/W R th mb-h thermal resistance from mounting base to heatsink note 1 0.15 K/W Fig.2 DC SOAR. Total device; both sections equally loaded. (1) Tmb =2 5°C. (2) Th =7 0°C. handbook, halfpage 102 MBK231 11 0 1 0 2 VCE (V) IC (A) (1) (2) Total device; both sections equally loaded. (1) Continuous operation. (2) Short time operation during mismatch. Fig.3 Power derating curves. handbook, halfpage 0 40 80 160 400 Ptot (W) 300 100 200 MGD528 120 Th (°C) (2) (1)

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 CHARACTERISTICS Values apply to either transistor section; Tj=2 5°C unless otherwise specified. Note 1. The value of Cc is that of the die only, it is not measurable because of the internal matching network.

APPLICATION INFORMATION

RF performance at Th =2 5°C in a common emitter push-pull class-AB test circuit; note 1. Note 1. See application note“AN98014 in handbook SC19b.” Ruggedness in class-AB operation The BLV862 is capable of withstanding a load mismatch corresponding to VSWR=2:1 through all phases under the conditions: Th =2 5°C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A; PL = 150 W; Rth mb-h= 0.15 K/W. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IE = 0; IC =6 0m A 6 5 −− V V(BR)CEO collector-emitter breakdown voltage IB = 0; IC = 150 mA 30 −− V V(BR)EBO emitter-base breakdown voltage I E = 3 mA; IC =0 3 −− V ICBO collector-base leakage current V CB =2 8V −− 5m A hFE DC current gain I C = 4.5 A; VCE =1 0V 3 0 − 140 − ΔhFE DC current gain ratio of both sections IC = 4.5 A; VCE = 10 V 0.67 − 1.5 − C c collector capacitance I E =ie= 0; VCE =2 8V ; f = 1 MHz; note 1 − 75 − pF MODE OF OPERATION f (MHz) VCE (V) ICQ (A) PL (W) G p (dB) ηC (%) ΔG p (dB) CW class-AB 860 28 0.8 150 ≥8 typ. 9 ≥45 typ. 52 ≤1

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 Fig.4 Power gain and collector efficiency as functions of load power; typical values. Th =2 5°C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A. handbook, halfpage 04 0 MGD529 80 120 200 160 G p (dB) G p ηC (%) PL (W) ηC Th =2 5°C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A. Fig.5 Load power as a function of drive power; typical values. handbook, halfpage 240 PL (W) 160 10 20 PD (W) MGD530 Fig.6 Intermodulation distortion as a function of output power; typical values. Th =2 5°C; VCE =2 8V ; ICQ = 0.8 A; 2-tone: fvision= 855.25 MHz (-8 dB); fsideband= 859.68 MHz (-16 dB). handbook, halfpage 0 100 500 200 300 400 MGG812 Po sync (W) −20 −30 −40 −50 −60 dim (dB) Fig.7 Intermodulation distortion as a function of output power; typical values. Th =2 5°C; VCE =2 8V ; ICQ = 0.8 A; 3-tone: fvision= 855.25 MHz (-8 dB); fsideband= 859.68 MHz (-16 dB); fsound = 860.75 MHz (-10 dB). handbook, halfpage 0 100 400 −20 −30 −40 −50 −60 200 300 MGG813 Po sync (W) dim (dB)

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... pagewidth MGG811 50 Ω output 50 Ω input L11 C11 C16 C17 L20 L19 L17 L18 L16 L14 L15 L13 C18 C13 L12 L10 C6 C7 C8 C9 C10 C12 C14 DUT R8 T2 R6 C3 C4 C19 C20 C15 /,/,/,/, /,/,/,/, /,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/, /,/,/, /,/,/, /,/,/, /,/,/, /,/,/,/, /,/,/,/, /,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/, /,/,/, /,/,/, /,/,/, +VCC = 28 V Fig.8 Class-AB test circuit at f = 860 MHz.

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 Fig.9 Printed-circuit board and component lay-out for the 860 MHz class-AB test circuit. Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. handbook, full pagewidth 102 MBH775 50 Ω input 50 Ω output C18 C16 X2X1 T1 T2 P1 C11 C12 C10C5,C6C1 C2 R1 R3C3 C7,C8 C13 C14 R7 R8 R9 C19 C20 C17 C15 BLV862

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 List of components Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic r = 2.55); thickness 0.5 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 multilayer ceramic chip capacitor; note 1 10 pF C2. C3 multilayer ceramic chip capacitor 1 nF 2222 852 47102 C4 solid aluminium capacitor 220 µF; 16 V 2222 031 35221 C5, C7 Tekelec trimmer 1 to 5 pF C6, C8 multilayer ceramic chip capacitor; note 2 6.8 pF C9, C10 multilayer ceramic chip capacitor; note 3 10 pF C11, C13 multilayer ceramic chip capacitor; note 1 100 pF C12 multilayer ceramic chip capacitor; note 1 8.2 pF C14 multilayer ceramic chip capacitor; note 2 3.9 pF C15 solid aluminium capacitor 100 µF; 40 V 2222 031 37101 C16, C17 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C18 multilayer ceramic chip capacitor; note 1 22 pF C19 multilayer ceramic chip capacitor; note 1 100 pF C20 multilayer ceramic chip capacitor 15 nF 2222 852 47153 L1, L2 stripline; note 4 47 × 1.8 mm L3, L4 stripline; note 4 2 × 5m m L5, L6 stripline; note 4 4 × 6m m L7, L8 stripline; note 4 4 × 8m m L9, L10 stripline; note 4 8.1 × 10 mm L11, L12 stripline; note 4 15 × 2m m L13, L14 stripline; note 4 5 × 10 mm L15, L16 stripline; note 4 10 × 8m m L17, L18 stripline; note 4 12.9 × 5m m L19, L20 stripline; note 4 48.7 × 1.8 mm B1 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5Ω 47 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5Ω 48.7 mm R1, R6 SMD resistor 100 Ω 0805 2122 118 03881 R2, R3, R4, R5, R8 SMD resistor 1 Ω 0805 2122 118 04562 R7 SMD resistor 47 Ω 0805 2122 118 04598 R9 SMD resistor 1.2 k Ω 0805 2122 118 04579 P1 potentiometer 4.7 k Ω X1, X2 copper ribbon hairpin T1, T2 NPN transistor BD139 9330 912 20112

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 Fig.10 Input impedance (per section) as function of frequency (series components); typical values. Th =2 5°C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device). handbook, halfpage 400 500 900 600 700 800 MGG814 f (MHz) Zi (Ω ) xi ri Fig.11 Load impedance (per section) as function of frequency (series components); typical values. Th =2 5°C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device). handbook, halfpage 400 500 900 600 700 800 MGG815 f (MHz) ZL (Ω ) R L XL Fig.12 Power gain as a function of frequency; typical values. Th =2 5°C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device). handbook, halfpage 400 500 900 600 700 800 MGG816 f (MHz) G p (dB) Fig.13 Definition of transistor impedance. handbook, halfpage MBA451 Zi ZL

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 99-03-29 IEC JEDEC EIAJ SOT262B 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262B p A F b e D q U 1 D 1 H 1 U 2H Q c EE1 C A w 1 ABM M M B Mw 3 M Mw 2 C UNIT A mm Db 8.51 8.25 0.16 0.10 22.17 21.46 11.05 10.29 10.03 15.49 14.99 9.91 9.65 5.39 4.62 c e U 2 0.250.25 0.51 w 3 27.94 qw 2w 1F 1.78 1.52 U 1 34.17 33.90 H 1 19.69 19.17 p 3.28 3.02 Q 2.47 2.20 EE 1D 1 10.27 10.05 inches 0.335 0.325 0.006 0.004 0.873 0.845 21.98 21.71 0.865 0.855 0.435 0.405 0.396 0.61 0.59 0.390 0.380 0.212 0.060 1.345 1.335 0.775 0.755 0.129 0.119 0.097 0.087 0.404 0.396 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

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