BLV861

BLV861 PHILIPS | Alldatasheet

Document overview

• Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

Product specification Supersedes data of 1998 Jan 14

1998 Jan 16

UHF linear push-pull power transistor book, halfpage M3D099

1998 Jan 16 2

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861

FEATURES

• Double stage internal input and output matching networks for an optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz).

DESCRIPTION

NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. PINNING Notes 1. Collectors c1 and c2 are internally connected. 2. Common emitters are connected to the flange. PIN SYMBOL DESCRIPTION 1 c1 collector 1; note 1 2 c2 collector 2; note 1 3 b1 base 1 4 b2 base 2 5 e common emitters; note 2 Fig.1 Simplified outline (SOT289A) and symbol. handbook, halfpage MAM374 e Top view QUICK REFERENCE DATA RF performance at Th =2 5°C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) G p (dB) ηC (%) ΔG p (dB) CW class-AB 860 28 100 ≥8.5 ≥55 ≤1 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1998 Jan 16 3

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Thermal resistance is determined under specified RF operating conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 15 A Ptot total power dissipation T mb =2 5°C − 220 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Ptot= 220 W; note 1 0.8 K/W R th mb-h thermal resistance from mounting base to heatsink 0.2 K/W Fig.2 DC SOAR. Total device; both sections equally loaded. (1) Tmb =2 5°C. (2) Th =7 0°C. handbook, halfpage 102 MGK766 11 0 1 0 2 VCE (V) IC (A) (2) (1)

1998 Jan 16 4

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 CHARACTERISTICS Values apply to either transistor section; Tj=2 5°C unless otherwise specified. Note 1. The value of Cc is that of the die only; it is not measurable because of the internal matching network.

APPLICATION INFORMATION

RF performance at Th =2 5°C in a common emitter push-pull class-AB test circuit. Ruggedness in class-AB operation The BLV861 is capable of withstanding a load mismatch corresponding to VSWR=3:1 through all phases under the conditions: Th =2 5°C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A; PL = 100 W; Rth mb-h= 0.2 K/W. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IE = 0; IC =3 5m A 6 5 −− V V(BR)CEO collector-emitter breakdown voltage IB = 0; IC =9 0m A 3 0 −− V V(BR)EBO emitter-base breakdown voltage I E = 2 mA; IC =0 3 −− V ICBO collector-base leakage current V CB =2 8V −− 3m A hFE DC current gain I C = 2.8 A; VCE =1 0V 3 0 − 120 − ΔhFE DC current gain ratio of both sections IC = 4.5 A; VCE = 10 V 0.67 − 1.5 − C c collector capacitance I E =ie= 0; VCE =2 8V ; f = 1 MHz; note 1 − 47 − pF MODE OF OPERATION f (MHz) VCE (V) ICQ (A) PL (W) G p (dB) ηC (%) ΔG p (dB) CW class-AB 860 28 0.1 100 ≥8.5 ≥55 ≤1

1998 Jan 16 5

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 Fig.3 Power gain and collector efficiency as functions of load power; typical values. Th =2 5°C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A. handbook, halfpage MGK768 0 40 80 160 120 PL (W) G p (dB) G p ηC (%) ηC Th =2 5°C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A. Fig.4 Load power as a function of drive power; typical values. handbook, halfpage 01 0 3 0 MGK769 150 100 PD (W) PL (W) Fig.5 Intermodulation distortion as a function of output power; typical values. Th =2 5°C; VCE =2 8V ; ICQ = 0.1 A; 2-tone: f vision= 855.25 MHz (−8 dB); fsideband= 859.68 MHz (−16 dB). handbook, halfpage 0 200 100 300 400 −60 −20 −30 −40 −50 MGK770 Po sync (dB) dim (dB) Fig.6 Intermodulation distortion as a function of output power; typical values. Th =2 5°C; VCE =2 8V ; ICQ = 0.1 A; 3-tone: f vision= 855.25 MHz (−8 dB); fsideband= 859.68 MHz (−16 dB); fsound = 860.75 MHz (−10 dB). handbook, halfpage 0 200 100 15050 250 −60 −20 −30 −40 −50 MGK771 Po sync (W) dim (dB)

1998 Jan 16 6

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 Fig.7 Class-AB test circuit at 860 MHz. handbook, full pagewidth MGK775 /,/, /,/,/, /,/,/,/, /,/,/,/, /,/,/, /,/,/, /,/,/,/, /,/,/,/, /,/,/, /,/,/, C6C5 C9C8C7 TR1 VCE = 28 V VCE = 28 V 50 Ω output 50 Ω input C10 C11 C12 C13 C2 C3 C14 C15 Vbias Vbias R5P1 TR3 TR2

1998 Jan 16 7

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 Fig.8 Printed-circuit board and component layout for the 860 MHz class-AB test circuit. Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. handbook, full pagewidth 50 Ω input 50 Ω output X2X1 TR1 R1C1 C13 C10 MGK776 C11 C12 TR3 VCE TR2 P1 R3 R4 R5 C14 C15 140

1998 Jan 16 8

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 List of components Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic r = 2.55); thickness 0.5 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C13 multilayer ceramic chip capacitor; note 1 15 pF C2, C11, C15 multilayer ceramic chip capacitor 15 nF 0805 2222 590 16629 C3, C12 multilayer ceramic chip capacitor 100 nF 1206 2222 581 16641 C4, C10 solid aluminium capacitor 100 µF; 40 V 2222 031 37101 C5 multilayer ceramic chip capacitor; note 2 8.2 pF C6 multilayer ceramic chip capacitor + Tekelek trimmer; note 2 10 pF; 0.6 to 4.5 pF C7 multilayer ceramic chip capacitor; note 3 10 pF C8 multilayer ceramic chip capacitor; note 3 2.7 pF C9 multilayer ceramic chip capacitor; note 2 3 pF C14 multilayer ceramic chip capacitor; note 1 100 nF L1, L8 stripline; note 4 46 × 1.8 mm L2, L3 stripline; note 4 20 × 5m m L4, L5 stripline; note 4 10 × 10 mm L6, L7 stripline; note 4 21 × 5m m B1 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5Ω 46 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5Ω 46 mm R1, R2, R4 SMD resistor 1 Ω 0805 2122 118 04562 R3 SMD resistor 47 Ω 0805 2122 118 04598 R5 SMD resistor 1.2 k Ω 0805 2122 118 04579 P1 potentiometer 4.7 k Ω X1, X2 copper ribbon hairpin TR1 NPN push-pull RF transistor BLV861 9340 542 40112 TR2, TR3 NPN transistor BD139 9330 912 20112

1998 Jan 16 9

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 Fig.9 Input impedance (per section) as a function of frequency (series components); typical values. Th =2 5°C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device). handbook, halfpage5 MGK772 Zi (Ω ) ri xi 400 600 800500 700 900 f (MHz) Fig.10 Load impedance (per section) as a function of frequency (series components); typical values. Th =2 5°C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device). handbook, halfpage 400 600 800500 700 900 MGK773 ZL (Ω ) f (MHz) R L XL Fig.11 Power gain and collector efficiency as functions of frequency; typical values. Th =2 5°C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device). handbook, halfpage 400 600 800 900 MGK774 f (MHz) G p (dB) ηC (%) 500 700 G p ηC Fig.12 Definition of transistor impedance. handbook, halfpage MBA451 Zi ZL

1998 Jan 16 10

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT289A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT289A D U 1 H 1 A U 2H Ep b Q F c M A w 3 M Cw 2 q e C B w 1 ABM UNIT A mm Db 3.33 3.07 0.10 0.05 13.10 12.90 4.60 19.81 19.05 11.81 11.56 4.65 3.92 c EU 2 0.250.51 1.02 w 3 21.44 qw 2w 1F 1.65 1.40 U 1 28.07 27.81 H 1 4.85 4.34 p 3.43 3.17 Q 2.31 2.06 e 11.53 11.33 inches 0.131 0.121 0.004 0.002 0.516 0.508 0.181 0.780 0.750 0.465 0.455 0.183 0.055 1.105 1.095 0.191 0.171 0.135 0.125 0.091 0.081 0.454 0.446 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1998 Jan 16 11

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Printed in The Netherlands 127047/00/05/pp12 Date of release: 1998 Jan 16 Document order number: 9397 750 03212