BLV857

BLV857 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1995 Oct 04

1997 Jan 16

UHF linear push-pull power transistor

1997 Jan 16 2

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857

FEATURES

• Internal input matching for an optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability. APPLICATION
• Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.

DESCRIPTION

NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange. PINNING SOT324B PIN SYMBOL DESCRIPTION 1 c1 collector 1 2 c2 collector 2 3 b1 base 1 4 b2 base 2 5 e common emitters Fig.1 Simplified outline and symbol. handbook, halfpage 3 4 MAM217Top view e QUICK REFERENCE DATA RF performance at Th =2 5°C in a common emitter push-pull test circuit. Note 1. Three-tone test signal (−8,−16 and−10 dB); dim = −54 dB. MODE OF OPERATION f (MHz) VCE (V) ICQ (A) Po sync (W) G p (dB) CW class-A 860 25 2 × 1.1 ≥10(1) ≥10(1) WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to Limiting values and Thermal characteristics 1. Total device; both sections equally loaded. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 7.4 A IC(AV) average collector current − 7.4 A Ptot total power dissipation T mb =7 0°C; note 1; see Fig.2 − 80 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting-base Ptot=8 0W ;Tmb =7 0°C note 1 1.6 K/W R th mb-h thermal resistance from mounting-base to heatsink note 1 0.4 K/W Fig.2 Power derating curve. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage 04 0 Ptot (W) 80 160 200 160 120 Tmb (°C) 120 MBH754 (1) (2)

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 CHARACTERISTICS Values apply to either transistor section; Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 15 mA; IE =0 6 0 −− V V(BR)CEO collector-emitter breakdown voltage IC = 30 mA; IB =0 2 8 −− V V(BR)EBO emitter-base breakdown voltage IE = 0.6 mA; IC = 0 2.5 −− V ICBO collector-base leakage current VCB =2 7V ; VBE =0 −− 1.5 mA ICEO collector-emitter leakage current VCE =2 0V −− 3m A hFE DC current gain V CE =2 5V ; IC = 1.1 A; see Fig.3 30 − 140 C c collector capacitance V CB =2 5V ; IE =ie = 0; f = 1 MHz; see Fig.4 − 18 − pF C re feedback capacitance V CE =2 5V ; IC = 0; f = 1 MHz − 11 − pF Fig.3 DC current gain as a function of collector current; typical values. VCE = 25 V; tp = 500µs;δ =< 1% . handbook, halfpage hFE 160 120

23 Ic (A)

Fig.4 Collector capacitance as a function of collector-base voltage; typical values. IE =ie = 0; f = 1 MHz. handbook, halfpage 01 0 C c (pF) 20 30 VCB (V)40 MBH755

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857

APPLICATION INFORMATION

RF performance at Th =2 5°C in a common emitter push-pull class-A test circuit. Notes 1. Three-tone test method: fvision= 855.25 MHz (vision carrier−8 dB); fsound = 860.75 MHz (sound carrier−10 dB); fsideband= 859.68 MHz (sideband signal−16 dB); 0 dB corresponds to peak sync level. 2. Three-tone test method: fvision= 855.25 MHz (vision carrier−8 dB); fsound = 860.75 MHz (sound carrier−7 dB); fsideband= 859.68 MHz (sideband signal−16 dB); 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLV857 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the conditions: VCE = 25 V; ICQ =2 × 1.1 A; f = 860 MHz; Th =2 5°C; Po sync=1 0W . MODE OF OPERATION f (MHz) VCE (V) ICQ (A) Po sync (W) G p (dB) dim (dB) Fig.5 Output power as a function of input power; typical values. VCE = 25 V; ICQ =2 × 1.1 A; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage Po sync (W)

46 Pi sync (W)

(1) (2) Fig.6 Power gain as a function of output power; typical values. VCE = 25 V; ICQ =2 × 1.1 A; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage 02 0 G p (dB) 40 60Po sync (W) MBH758 (1) (2)

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 Fig.7 Intermodulation distortion as a function of output power; typical values. VCE = 25 V; ICQ =2 × 1.1 A; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =7 0°C. (2) Th =2 5°C. handbook, halfpage 02 0 dim (dB) −30 −40 −50 −60 −70 −80 40 60Po sync (W) MBH759 (1) (2) Fig.8 Intermodulation distortion as a function of collector current; typical values. VCE = 25 V; f = 860 MHz; (3-tone;−8/−16/−10 dB). (1) Th =7 0°C. (2) Th =2 5°C. handbook, halfpage 1.4 1.8 dim (dB) −40 −45 −50 −55 −60 2.62.2 3 IC (A) MBH760 (1) (2)

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 Fig.9 Class-A test circuit at f = 860 MHz. handbook, full pagewidth /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, C24C22 C23C21 L11 L12 L10 C31 L13 L14 L15 L16 C26 C25 C27 C28 C29 /,/,/,/, /,/,/,/, /,/,/,/, B1C20 C10 C15 C13 C14 C11 C12 /,/,/,/, /,/,/,/, /,/,/,/, input 50 Ω output 50 Ω /,/, /,/, L17 Vsupply C6 C2 T2 T2 DUT C30 /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, +VCC +VBB MBH764

1997 Jan 16 8

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit. Dimensions in mm. The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. MBH765 handbook, full pagewidth 115 T2P1T1 E C B C30 BLV857 C31 C11 C15 L17 C13 C12 C14 C29 L13 L14L4 L3 L5 L11 L12 L10 C25 & C26C21 & C22 C27 & C28 L15 L16 C23 & C24 C10 C20 L1 & L2 inner lead and outer lead are shorted (each balun).wire jumper VCC 50 Ω output 50 Ω input

1997 Jan 16 9

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 List of components Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board: Rogers ULTRALAM 2000 (B0300M1046QB) r = 2.55); thickness 0.76 mm. 3. Position of C25 and C26: distance of centre capacitor to transistor BLV857 = 7.5 mm. Position of C27 and C28: distance of centre capacitor to balun B2 = 1.5 mm. 4. The sense resistor on the bias unit is implemented as a stripline L17, in this way we obtain a small sense resistor (approximately 80 mΩ ) which can handle the dissipated power. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C3, C5, C6, C7, C8, C9, C10 multilayer ceramic chip capacitor 10 nF 805 2222 590 16627 C4 solid aluminium capacitor 47 µF; 25 V 2222 030 36479 C11, C12, C13, C14, C30, C31 multilayer ceramic chip capacitor 100 nF 1206 2222 591 16641 C15 solid aluminium capacitor 10 µF; 63 V 2222 030 38109 C20 multilayer ceramic chip capacitor; note 1 18 pF C21 multilayer ceramic chip capacitor; note 1 3 pF C22, C24, C26, C28 Tekelec Giga trim 37271; note 3 0.6 to 4.5 pF C23 multilayer ceramic chip capacitor; note 1 7.5 pF C25 multilayer ceramic chip capacitor; notes 1 and 3 11 pF C27 multilayer ceramic chip capacitor; notes 1 and 3 9.1 pF C29 multilayer ceramic chip capacitor; note 1 100 pF L1, L2, L15, L16 stripline; note 2 50 Ω 30.6× 2m m L3, L4 stripline; note 2 50 Ω 10 × 2m m L5, L6 stripline; note 2 26.5 Ω 3 × 5m m L7, L8 stripline; note 2 15 Ω 3 × 10 mm L9, L10 stripline; note 2 104 Ω 6 × 0.5 mm L11, L12 stripline; note 2 38.8 Ω 3 × 3m m L13, L14 stripline; note 2 50 Ω 22.5× 2m m L17 stripline; notes 2 and 4 76.2 Ω 120 × 1m m B1, B2 Semi rigid coax balun UT70-25 Z = 25 Ω ±1.5Ω 70 mm R1 SMD resistor 220 Ω 805 2322 734 22201 R2 SMD resistor 1.8 Ω 805 2322 734 21808 R3 SMD resistor 4.3 k Ω 805 2322 734 24302 R4 SMD resistor 33 Ω 805 2322 734 23309 R5, R6 SMD resistor 3.3 Ω 805 2322 734 23308 P1 potentiometer 2 k Ω T1 NPN transistor BD139 9330 912 20112 T2 double PNP transistor BCV62 5322 130 60505

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Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 Fig.11 Input impedance (per section) as a function of frequency (series components); typical values. VCE = 25 V; ICQ =2 × 1.1 A; Po sync= 10 W (total device); Th =2 5°C. handbook, halfpage 400 600 800 1000 Zi (Ω ) ri xi f (MHz) MBH761 Fig.12 Load impedance (per section) as a function of frequency (series components); typical values. VCE = 25 V; ICQ =2 × 1.1 A; Po sync= 10 W (total device); Th =2 5°C. handbook, halfpage 400 600 800 1000 ZL (Ω ) XL R L f (MHz) MBH762 Fig.13 Gain as a function of frequency; typical values. VCE = 25 V; ICQ =2 × 1.1 A; Po sync= 10 W (total device); Th =2 5°C. handbook, halfpage 400 600 800 1000 G p (dB) f (MHz) MBH763 Fig.14 Definition of transistor impedance. handbook, halfpage MBA451 Zi ZL

1997 Jan 16 11

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification. Fig.15 SOT324B. Dimensions in mm. Heatsink compound must be applied sparingly and evenly distributed. handbook, full pagewidth MSA451 3.43 3.17 6.43 6.17 5.59 4.57 5.59 4.57 19.03 18.77 8.26 8.0 1.66 1.39 5.0 max 2.32 2.20 0.1 1.66 1.39 (3x) 14.22 1 2 3 4

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