BLV75

BLV75 PHILIPS | Alldatasheet

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Technical content

Product specification August 1986 DISCRETE SEMICONDUCTORS BLV75/12 VHF power transistor

Philips Semiconductors Product specification VHF power transistor BLV75/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

FEATURES

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile
• gold metallization ensures excellent reliability
• internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =2 5°C in a common-emitter class-B circuit MODE OF OPERATION V CE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 175 75 > 6,5 > 55 PIN CONFIGURATION Fig.1 Simplified outlinbe, SOT119A. handbook, halfpage MSB006 PINNING PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification VHF power transistor BLV75/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value v CBOM max. 36 V Collector-emitter voltage (open base) V CEO max. 16,5 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C max. 15 A peak value; f> 1 MHz I CM max. 45 A Total power dissipation at Tmb =2 5°C; f> 1 MHz P tot max. 150 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C handbook, halfpage MGP390 102 11 0 16.5 102 Tmb = 25 °C Th = 70 °C IC (A) VCE (V) Fig.3 Power/temperature derating curves; R th mb-h= 0,2 K/W. I Continuous operation (f> 1 MHz) II Short-time operation during mismatch; (f> 1 MHz). handbook, halfpage 0 100 200 200 100 MGP391 Ptot (W) Th (°C) ΙΙ Ι THERMAL RESISTANCE Dissipation = 96 W; Tmb =2 5°C From junction to mounting base (r.f. operation) R th j−mb = 1,05 K/W From mounting base to heatsink R th mb−h = 0,2 K/W

Philips Semiconductors Product specification VHF power transistor BLV75/12 CHARACTERISTICS Tj=2 5°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA V (BR)CBO min. 36 V Collector-emitter breakdown voltage open base; IC = 200 mA V (BR)CEO min. 16,5 V Emitter-base breakdown voltage open collector; IE = 20 mA V (BR)EBO min. 4 V Collector cut-off current VBE = 0; VCE = 16 V I CES max. 44 mA Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR min. 20 mJ D.C. current gain min. typ. 55VCE = 10 V; IC = 10 A h FE Collector capacitance at f = 1 MHz IE =ie = 0; VCB = 12,5 V C c typ. 240 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V C re typ. 150 pF Collector-flange capacitance C cf typ. 3 pF Fig.4 D.C. current gain versus collector current; Tj=2 5°C. handbook, halfpage 01 0 2 0 4 0 MGP392 hFE IC (A) VCE = 12.5 V 10 V Fig.5 Output capacitance versus VCB ;IE = ie =0 ; f = 1 MHz; Tj=2 5°C. handbook, halfpage 800 400 MGP393 C c (pF) VCB (V)

Philips Semiconductors Product specification VHF power transistor BLV75/12 APPLICATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W MODE OF OPERATION V CE V PL W G p dB ηC narrow band; c.w. 12,5 75 > 6,5 > 55 typ. 7,5 typ. 63 Fig.6 Class-B test circuit at f = 175 MHz. handbook, full pagewidth MGP394 +VCC 50 Ω L1 L2 L3 L7 C7C5 C6 C8C4C2 L4 T.U.T. C13 C14 C12 L10 C10 C18 C19C11 L11 C17C15 C16C1 C3 50 Ω C20

Philips Semiconductors Product specification VHF power transistor BLV75/12 List of components: Note 1. American Technical Ceramics capacitor type 100B or capacitor of the same quality. C1 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C2 = 10 pF multilayer ceramic chip capacitor(1) C3 = C16 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C4 = C5 = 75 pF multilayer ceramic chip capacitor C6 = C7 = 100 pF multilayer ceramic chip capacitor (1) C8 = C9 = 2 × 75 pF multilayer ceramic chip capacitors(1) in parallel C10 = C13 = 39 pF multilayer ceramic chip capacitor(1) C11 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C12 = 2 × 820 pF multilayer ceramic chip capacitors in parallel (1) C14 = 100 nF polyester capacitor C15 = C17 = 12 pF multilayer ceramic chip capacitor(1) C18 = C19 = 470 pF multilayer ceramic chip capacitor(1) C20 = 820 pF multilayer ceramic chip capacitor(1) L1 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 10 mm; leads 2× 4 mm L2 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 1 mm; leads 2× 6 mm L3 = strip (14 mm × 6 mm) L4 = strip (8 mm × 6 mm) L5 = 100 nH, 7 turns closely wound enamelled Cu-wire (0,5 mm); int. dia. 3 mm; leads 2× 7 mm L6 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) L7 = strip (12 mm × 6 mm) L8 = silver-plated copper U-shaped inductance (7+ 15+ 7) mm× 4 mm × 0,5 mm L9 = silver-plated copper U-shaped inductance (8+ 8,5+ 6) mm× 4 mm × 0,5 mm L10 = modified Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) with 3 parallel connected Cu wires (0,8 mm) L11 = 2 turns silver-plated Cu-wire (2,0 mm); int. dia. 9 mm; length 7,5 mm; leads 2× 3,5 mm L3, L4 and L7 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric (ε r = 4,5), thickness 1/16 inch). R1 = 10 Ω± 10%, carbon resistor R2 = 4,7 Ω± 10%, carbon resistor

Philips Semiconductors Product specification VHF power transistor BLV75/12 The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated by the dotted line, is unetched copper serving as a ground plane. If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to be raised al least 0,5 mm to minimize the dielectric losses. Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to provide a direct contact between the copper of the component side and the ground plane. Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit. handbook, full pagewidth MGP395 192 rivets C20 C2 C4 L3 L4 L7 L11 C11 C16 C15 C17 C18 C19 C13 C10 C14R2 L10 +VCC C12 C1 C3 L2 C5 C7 Cu strap soldered copper straps ground plane removed

Philips Semiconductors Product specification VHF power transistor BLV75/12 Fig.8 Load power versus source power. Typical values; VCE = 12,5 V; f = 175 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W handbook, halfpage 01 0 3 0 120 MGP396 PL (W) PS (W) Fig.9 Power gain and efficiency versus load power. Typical values; VCE = 12,5 V; f = 175 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W handbook, halfpage 0 40 120 120 MGP397

80 PL (W)

(dB) ηC ηC (%) G P Ruggedness in class-B operation The BLV75/12 is capable of withstanding a load mismatch (VSWR = 20 through all phases) at rated load power up to a supply voltage of 12,5 V; T h =2 5°C; Rth mb-h= 0,2 K/W. Power slump If Th is increased from 25°C to 70°C the output power slump for constant PS amounts to typ. 7% (VCE = 12,5; f = 175 MHz; Rth mb-h= 0,2 K/W).

Philips Semiconductors Product specification VHF power transistor BLV75/12 Fig.10 Input impedance (series components). Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h= 0,2 K/W handbook, halfpage 50 100 150 200 MGP398 ri xi ri, xi (Ω ) f (MHz) Fig.11 Load impedance (series components). Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h= 0,2 K/W handbook, halfpage 50 100 150 200 MGP399 R L XL R L, XL (Ω ) f (MHz) Fig.12 Power gain versus frequency. Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h= 0,2 K/W handbook, halfpage 0 50 100 200 MGP400 150 G P (dB) f (MHz)

Philips Semiconductors Product specification VHF power transistor BLV75/12 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT119A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT119A U 2H A F A b Mw 3b1 p w 1 ABM D 1 DU 3 Q c q U 1 C B e M Cw 2H 1 UNIT A mm Db 5.59 5.33 0.18 0.07 12.86 12.59 6.48 22.10 21.08 6.48 6.07 12.76 12.06 7.39 6.32 c eU 2 0.5118.42 qw 1 0.261.02 w 3w 2U 3H 1 18.55 18.28 U 1 25.23 23.95 4.07 3.81 b2b1 5.34 5.08 p 3.31 2.97 Q 4.58 3.98 FH 12.83 12.57 D 1 2.54 2.28 inches 0.220 0.210 0.007 0.003 0.505 0.496 0.255 0.870 0.830 0.255 0.239 0.502 0.475 0.291 0.720 0.993 0.943 0.160 0.150 0.210 0.200 0.130 0.117 0.180 0.157 0.505 0.495 0.100 0.090 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power transistor BLV75/12 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.