BLV59

BLV59 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of March 1993

1998 Jan 09

UHF linear power transistor M3D076

1998 Jan 09 2

Philips Semiconductors Product specification UHF linear power transistor BLV59

FEATURES

• Internal input matching to achieve an optimum wideband capability and high power gain
• Emitter-ballasting resistors for lower junction temperatures
• Titanium-platinum-gold metallization ensures long life and excellent reliability.

APPLICATIONS

• UHF linear amplifiers in television transmitters.

DESCRIPTION

NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171A PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter Fig.1 Simplified outline and symbol. handbook, halfpage MAM141Top view e c b QUICK REFERENCE DATA RF performance at Th =2 5°C in a common emitter class-AB circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) G p (dB) ηC (%) CW, class-AB 860 25 30 >7 >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1998 Jan 09 3

Philips Semiconductors Product specification UHF linear power transistor BLV59 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC collector current (DC) − 3A IC(AV) average collector current − 3A ICM peak collector current f > 1 MHz − 9A Ptot total power dissipation T mb =2 5°C; f> 1 MHz − 70 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Fig.2 DC SOAR. handbook, halfpage MGP379 10−1 11 0 1 0 2 IC (A) VCE (V) Tamb = 25 °C Th = 70 °C R th mb-h= 0.4 K/W. (1) Continuous operation (f> 1 MHz). (2) Short-time operation during mismatch (f> 1 MHz). Fig.3 Power/temperature derating curves. handbook, halfpage 0 200 100 MGP380 100 Ptot (W) Th (°C) (2) (1)

1998 Jan 09 4

Philips Semiconductors Product specification UHF linear power transistor BLV59 THERMAL CHARACTERISTICS CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Tmb =2 5°C, Ptot= 50 W 2.3 K/W R th mb-h thermal resistance from mounting base to heatsink 0.4 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC =5 0m A 5 0 −− V V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA 27 −− V V(BR)EBO emitter-base breakdown voltage open collector; IE =1 0m A 3 . 5 −− V ICES collector leakage current V CE = 27 V; VBE =0 −− 10 mA E(SBR) second breakdown energy L = 25 mH; f = 50 Hz; R BE =1 0Ω 4 −− mJ hFE DC current gain V CE = 24 V; IC =2A 1 5 −− C c collector capacitance V CB = 25 V; IE =ie = 0; f = 1 MHz− 44 − pF C re feedback capacitance V CE = 25 V; IC = 0; f = 1 MHz − 30 − pF C cf collector-flange capacitance − 2 − pF Fig.4 DC current gain as a function of collector current; typical values. handbook, halfpage 04 8 100 MGP381 hFE VCE = 25 V 20 V IC (A) Tj=2 5°C. Fig.5 Collector capacitance as a function of collector-base voltage; typical values handbook, halfpage 0 1 02 03 0 100 MGP382 C c (pF) VCB (V) IE =ie = 0; f = 1 MHz.

1998 Jan 09 5

Philips Semiconductors Product specification UHF linear power transistor BLV59

APPLICATION INFORMATION

RF performance up to Th =2 5°C in a common emitter class-AB circuit; Rth mb-h= 0.4 K/W. Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with Ruggedness in class-AB operation The BLV59 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases at rated load power under the following conditions: VCE = 25 V; f = 860 MHz; Th =2 5°C; Rth mb-h= 0.4 K/W; IC(ZS) = 60 mA. MODE OF OPERATION f (MHz) VCE (V) IC(ZS) (mA) G p (dB) PL (W) ηC (%) ΔG p (dB)(1) CW, class-AB 860 25 60 >7 typ. 8.5 30 >50 typ. 55 typ. 0.2 handbook, full pagewidth MGP383 50 Ω 50 Ω D.U.T. +VBB +VCC L1 L2 L3 L4 L6 L11L10L9 C18 L5 L7 C4 C6 C8 C9 C19 C5C2 C7 C10 C12 C14 C16 C11 C20 C21 C13 C15 C17 Fig.6 Class-AB test circuit at 860 MHz. Temperature compensated bias (Ri< 0.1Ω ).

1998 Jan 09 6

Philips Semiconductors Product specification UHF linear power transistor BLV59 List of components(see Figs 6 and 7). Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (ε r = 2.2); thickness1⁄32". COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C18 multilayer ceramic chip capacitor; note 1 33 pF C2, C14, C16 multilayer ceramic chip capacitor; note 1 3.6 pF C3, C4, C15, C17 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C5, C6 multilayer ceramic chip capacitor; note 1 1.8 pF C7, C8 multilayer ceramic chip capacitor 6.2 pF C9, C21 multilayer ceramic chip capacitor; note 1 330 pF C10, C11 multilayer ceramic chip capacitor; note 2 5.6 pF C12 multilayer ceramic chip capacitor; note 1 5.6 pF C13 multilayer ceramic chip capacitor; note 1 6.2 pF C19 multilayer ceramic chip capacitor; note 1 10 pF C20 electrolytic capacitor 6.8 µF; 63 V L1, L11 stripline; note 3 50 Ω 26 mm × 2.4 mm L2, L3 stripline; note 3 50 Ω 9.5 mm × 2.4 mm L4 stripline; note 3 42.6 Ω 6m m × 3m m L5 4 turns of closely wound 0.4 mm enamelled copper wire 60 nH int. diameter 3 mm leads 2× 5m m L6 stripline; note 3 42.6 Ω 4m m × 3m m L7 4 turns of closely wound 1 mm enamelled Cu wire 45 nH int. diameter 4 mm leads 2× 5m m L8 Ferroxcube HF choke grade 3B 4312 020 36642 L9 stripline; note 3 50 Ω 9m m × 2.4 mm L10 stripline; note 3 50 Ω 13.5 mm × 2.4 mm R1 metal film resistor 10 Ω± 5%; 1 W

1998 Jan 09 7

Philips Semiconductors Product specification UHF linear power transistor BLV59 Fig.7 Printed-circuit board and component layout for 860 MHz class-AB test circuit. handbook, full pagewidth MGP384 130 copper straps copper straps rivets rivets copper straps copper straps rivets rivets L1 L2 L3 L5 L7 +VBB +VCC C3 C4 C2 C10 L6 L9 C11 C19 L11 C13 C12 C21 L10 C15 C17 C14 C16 C18 C20 Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board, the other side is unetched and serves as a ground plane. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact between the copper on the component side and the ground plane.

1998 Jan 09 8

Philips Semiconductors Product specification UHF linear power transistor BLV59 Fig.8 Load power as a function of source power; typical values. handbook, halfpage 01 0 MGP385 2468 PL (W) PS (W) VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th =2 5°C; R th mb-h= 0.4 K/W; class-AB operation. Fig.9 Power gain and efficiency as a function of load power; typical values. handbook, halfpage 05 0 MGP386 100 G p (dB) G p PL (W) ηC (%) ηC VCE = 25 V; f = 860 MHz; IC(ZS) = 60 mA; Th =2 5°C; R th mb-h= 0.4 K/W; class-AB operation. Fig.10 Input impedance as a function of frequency (series components); typical values. VCE = 25 V; PL = 30 W; Th =2 5°C; R th mb-h= 0.4 K/W; IC(ZS) = 60 mA; class-AB operation. handbook, halfpage 400 2.2 1.4 1.8 0.6 500 900 MGP387 600 700 800 Zi (Ω ) f (MHz) xi ri Fig.11 Load impedance as a function of frequency (series components); typical values. VCE = 25 V; PL = 30 W; Th =2 5°C; R th mb-h= 0.4 K/W; IC(ZS) = 60 mA; class-AB operation. handbook, halfpage 400 500 900 MGP388 600 700 800 f (MHz) ZL (Ω ) R L XL

1998 Jan 09 9

Philips Semiconductors Product specification UHF linear power transistor BLV59 Fig.12 Power gain as a function of load power; typical values. VCE = 25 V; PL = 30 W; Th =2 5°C; R th mb-h= 0.4 K/W; IC(ZS) = 60 mA; class-AB operation. handbook, halfpage 400 600 800 1000 MGP389 G p (dB) f (MHz)

1998 Jan 09 10

Philips Semiconductors Product specification UHF linear power transistor BLV59 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT171A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT171A U 2 EE1H Q D D 1 A F c A b Mw 3 H 1 M Cw 2 e U 1 q p C w 1 ABM B UNIT A mm Db 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 D 1 9.30 8.99 E 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c E1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 9.27 9.01 p 3.43 3.17 Q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1998 Jan 09 11

Philips Semiconductors Product specification UHF linear power transistor BLV59 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

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