BLV58 PHILIPS

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Product specification September 1991 DISCRETE SEMICONDUCTORS BLV58 UHF linear push-pull power transistor

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58

FEATURES

  • High power gain
  • Double stage internal input matching for high input impedance
  • Diffused emitter-ballasting resistors enhances ruggedness
  • Gold metallization for high reliability.

DESCRIPTION

The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers. The device is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, which is utilized with the emitters connected to the flange. PINNING - SOT289 PIN DESCRIPTION 1 collector 1 2 collector 2 3 base 1 4 base 2 5 emitter QUICK REFERENCE DATA RF performance at Th = 25°C in a common emitter test circuit. Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB); zero dB corresponds to peak sync level. PIN CONFIGURATION MODE OF OPERATION fvision (MHz) VCE (V) ICQ (A) Po sync (W) G p (dB) dim (dB) (note1) c.w. class-A 860 25 2 × 1.6 25 >10 <− 45 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. handbook, halfpage MBA970 e Fig.1 Simplified outline and symbol. k, halfpage MBC043 Top view

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). Note 1. Total device, both sections equally loaded. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC ,IC(AV) collector current DC or average value − 4A ICM collector current peak value; f> 1 MHz − 8A Ptot total power dissipation DC operation; Tmb =7 0°C (note 1) − 87 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C Fig.2 DC SOAR. Total device, both sections equally loaded. handbook, halfpage MRA354 11 0 (A) o V (V)CE IC = 25 ChT T = 70 Co mb Fig.3 Power derating curve. (I) Continuous DC operation. (II) Short time operation during mismatch. Total device, both sections equally loaded. handbook, halfpage MRA355 120 160 200 0 20 40 60 80 100 120 (W) I II ( C)oTh Ptot

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 THERMAL RESISTANCE Note 1. Total device, both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25°C. SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb(DC) from junction to mounting base P dis=8 7W ; Tmb =7 0°C (note 1)

1.5 K/W

R th mb-h from mounting base to heatsink note 1 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC =2 0m A 50 −− V V(BR)CEO collector-emitter breakdown voltage open base; IC =5 0m A 27 −− V V(BR)EBO emitter-base breakdown voltage open collector; IE =1 0m A 3.5 −− V ICES collector-emitter leakage current VBE =0 ; VCE =2 7V −− 10 mA hFE DC current gain V CE =2 5V ; IC = 1.6 A 30 −− C c collector capacitance V CB =2 5V ; IE =Ie =0 ; f=1M H z − 36 45 pF

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 Fig.4 DC current gain as a function of collector current, typical values. VCE =2 5V . handbook, halfpage MRA350 120 0123 FEh (A)IC Fig.5 Collector capacitance as a function of collector-base voltage, typical values. IE =ie = 0; f = 1 MHz. handbook, halfpage 120 0 1 02 03 04 0 MRA346 (pF) cC (V)VCB

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58

APPLICATION INFORMATION

RF performance at Th =2 5°C in a common emitter push-pull test circuit; Rth mb-h= 0.2 K/W. Notes 1. Three-tone test method: vision carrier−8 dB (860 MHz), sound carrier−7 dB (865.5 MHz), sideband signal−16 dB (861 MHz); zero dB corresponds to peak sync level. 2. Two-tone test method: vision carrier 0 dB (860 MHz), sound carrier−7 dB (865.5 MHz); zero dB corresponds to peak sync level. Cross-modulation distortion (dcm ) is the voltage variation (%) of the sound carrier when the vision carrier is switched from 0 dB to−20 dB. MODE OF OPERATION fvision (MHz) VCE (V) ICQ (A) Po sync (W) G P (dB) dim (dB) (note1) dcm (%) (note2) c.w. class-A 860 25 2 × 1.6 25 > 10 typ. 11.5 <− 45 typ.−47 < 20 Fig.6 Intermodulation distortion as a function of output power. Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB,−16 dB,−7 dB); ICQ =2 × 1.6 A. handbook, halfpage -70 -60 -50 -40 01 0 2 0 3 0 (dB) MRA351 dim (W)Po sync T = 70 Co h T = 25 C o h Fig.7 Intermodulation distortion as a function of collector current. Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB,−16 dB,−7 dB); Po sync=2 5W . handbook, halfpage MRA349 -50 -48 -46 -44 -42 -40 1.6 2.4 3.2 4 (A) (dB) dim IC = 25 C oTh = 70 CoTh Ruggedness in Class-A operation The BLV58 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: V CE = 25 V, f = 860 MHz, Th =2 5°C, R th mb-h= 0.2 K/W, ICQ =2 × 1.6 A, and rated output power.

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 Fig.8 Output power as a function of input power. Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB,−16 dB,−7 dB); ICQ =2 × 1.6 A. handbook, halfpage MRA356 0123 (W) o syncP (W)Pi sync T = 25 Co h T = 70 Co h Fig.9 Gain as a function of output power, typical values. Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB,−16 dB,−7 dB); ICQ =2 × 1.6 A. handbook, halfpage MRA348 01 0 2 0 3 0 T = 70 C o mb T = 25 Co h(dB) G P P (W)o sync

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 Fig.10 Class-A test circuit at f = 860 MHz. handbook, full pagewidth MBC048 C34 C35 50 Ω output L22 L20 L21 50 Ω input L1 C1 BLV58 C10 L13 T.U.T. C5C4 VBB C11 C12 C14 C13 VBB L10 V CC C29 C30 C33 C31 C32 L16 L18 L11 L17 L19 C22 C23 C25 C24 C26 L15 R2 C28 C27 C20 C21 C19 C17 C18 L12 R1 C16 C15 VCC

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 List of components (see test circuit) Notes 1. American Technical Ceramics type 100B or capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE microfibre-glass dielectric (ε r = 2.2), thickness1⁄32 inch, thickness of copper sheet 2× 35 µm. 3. Cables L2 and L21 are soldered to striplines L1 and L20, respectively. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C34, C35 multilayer ceramic chip capacitor (note 1) 15 pF C3 multilayer ceramic chip capacitor (note 1) 3.9 pF C4, C6 film dielectric trimmer 5.5 pF 2222 809 09005 C5 multilayer ceramic chip capacitor (note 1) 7.5 pF C7, C12, C17, C26 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C8, C14, C19, C25 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9, C11, C16, C20, C22, C28

63 V electrolytic capacitor 10 µF

C10, C13, C15, C21, C23, C27 multilayer ceramic chip capacitor (note 1) 330 pF C18, C24 63 V electrolytic capacitor 1 µF C29 multilayer ceramic chip capacitor (note 1) 12 pF C30 multilayer ceramic chip capacitor (note 1) 5.6 pF C31, C33 film dielectric trimmer 3.5 pF 2222 809 05001 C32 multilayer ceramic chip capacitor (note 1) 2.7 pF L1, L3, L20, L22 stripline (note 2) 35 Ω 39 mm × 4m m L2, L21 semi-rigid cable (note 3) 50 Ω ext. dia. 3.6 mm; length 39 mm L4, L5 stripline (note 2) 38 Ω 19 mm × 3.5 mm L6, L7 RF choke 470 nH L8, L9 stripline (note 2) 38 Ω 7.5 mm × 3.5 mm L10, L11 stripline (note 2) 38 Ω 4.5 mm × 3.5 mm L12, L15 grade 3B RF choke 4312 020 36642 L13, L14 1 turn 1.5 mm copper wire 14 nH int. dia 7 mm; leads 2× 6m m L16, L17 stripline (note 2) 38 Ω 7m m × 3.5 mm L18, L19 stripline (note 2) 38 Ω 18 mm × 3.5 mm R1, R2 1 W metal film resistor 10 Ω

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 Fig.11 Component layout for 860 MHz class-A test circuit. The components are mounted on one side of a copper clad PTFE microfibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by hollow rivets and copper straps. handbook, full pagewidth MBC046 170 mm 80 mmrivet (2x) copper strap (6x) handbook, full pagewidth MBC047 L2 + L3 C11 C14 C13 C12 C26 C25 C23 C22 C24 L15 L14 C27 C28 L17 L16 L13 C30 C31 C32 C33 C34 C35 L12 C20C18C7 C10 C17 C19 C21 C16 C15 L21 + L22 L20 L10 C29 L11 L18 L19

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 Fig.12 Input impedance per section (series components) as a function of frequency, typical values. Class-A operation; VCE =2 5V ; ICQ = 1.6 A (per section); PL = 25 W (total device); Th =2 5°C. handbook, halfpage MRA352 400 500 600 700 800 900 f (MHz) Z i (Ω ) xi ri Fig.13 Load impedance per section (series components) as a function of frequency, typical values. Class-A operation; VCE =2 5V ; ICQ = 1.6 A (per section); PL = 25 W (total device); Th =2 5°C. handbook, halfpage MRA353 400 500 600 700 800 900 f (MHz) ZL (Ω ) R L X L Fig.14 Definition of transistor impedance. handbook, halfpage MBA451 Zi ZL Fig.15 Power gain as a function of frequency, typical values. Class-A operation; VCE =2 5V ; ICQ = 1.6 A (per section); PL = 25 W (total device); Th =2 5°C. handbook, halfpage MRA347 400 500 600 700 800 900 (dB) f (MHz) G P

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT289A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT289A D U 1 H 1 A U 2H Ep b Q F c M A w 3 M Cw 2 q e C B w 1 ABM UNIT A mm Db 3.33 3.07 0.10 0.05 13.10 12.90 4.60 19.81 19.05 11.81 11.56 4.65 3.92 c EU 2 0.250.51 1.02 w 3 21.44 qw 2w 1F 1.65 1.40 U 1 28.07 27.81 H 1 4.85 4.34 p 3.43 3.17 Q 2.31 2.06 e 11.53 11.33 inches 0.131 0.121 0.004 0.002 0.516 0.508 0.181 0.780 0.750 0.465 0.455 0.183 0.055 1.105 1.095 0.191 0.171 0.135 0.125 0.091 0.081 0.454 0.446 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.