BLV57

BLV57 PHILIPS

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Technical content

Product specification Supersedes data of August 1986

1998 Feb 09

UHF linear push-pull power transistor

1998 Feb 09 2

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57

FEATURES

• internally matched input for wideband operation and high power gain
• internal midpoint (r.f. ground) reduces negative feedback and improves power gain
• increased input and output impedances (compared with single-ended transistors) simplify wideband matching
• length of the external emitter leads is not critical
• diffused emitter ballasting resistors for an optimum temperature profile
• gold metallization ensures excellent reliability.

DESCRIPTION

Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. television transmitters and transposers. The package is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN SYMBOL DESCRIPTION 1 e emitter 2 e emitter 3 c2 collector 2 4 b2 base 2 5 c1 collector 1 6 b1 base 1 7 e emitter 8 e emitter Fig.1 Simplified outline and symbol. handbook, halfpage MBC826 Top view QUICK REFERENCE DATA R.F. performance in linear amplifier Notes 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. 2. Power gain compression is 1 dB. MODE OF OPERATION fvision MHz VCE V IC1 =IC2 A IC(ZS) A Th dim(1) dB Po sync(1) W PL W G p dB class-A 860 25 0,85 − 70 −60 −55 typ. 12 − 〉 typ. 8,0 9,0 class-AB 860 25 1,25 2 × 0,1 25 −− typ. 38(2) typ. 6,5(2) WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1998 Feb 09 3

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Note 1. Dissipation of either transistor section should not exceed half rated dissipation. Collector-emitter voltage (peak value); VBE =0 v CESM max. 50 V open base V CEO max. 27 V Emitter-base voltage (open collector) V EBO max. 3,5 V Collector current per transistor section d.c. or average I C ; IC(AV) max. 2 A (peak value); f〉1 MHz I CM max. 4 A Total power dissipation at Tmb =2 5°C (1) Ptot max. 77 W (1) R.F. power dissipation (f〉1 MHz); Tmb =2 5°C (1) Prf max. 93 W (1) Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR.(1) (1) Second breakdown limit (independent of temperature). handbook, halfpage MGP358 11 0 1 0 2 IC1 + IC2 (A) VCE (V) (1) Tmb = 25 °CTh = 70 °C

1998 Feb 09 4

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 THERMAL RESISTANCE (dissipation = 42 W; Tmb = 80,5°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j−mb(dc) = 2,43 K/W From junction to mounting base (r.f. dissipation) R th j−mb(rf) = 1,91 K/W From mounting base to heatsink R th mb−h = 0,25 K/W Fig.3 Power derating curves vs. temperature.(1) I Continuous d.c. (including r.f. class-A) operation II Continuous r.f. operation Dissipation of either transistor section should not exceed half rated dissipation. handbook, halfpage 05 0 Th (°C) 100 100 MGP359 Ptot (W) ΙΙ Ι

1998 Feb 09 5

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Example Nominal class-A push-pull operation (without r.f. signal): VCE = 25 V; IC1 =IC2 = 0,85 A; Th =7 0°C. Fig.4 shows: R th j-h max. 2,68 K/W Tj max. 184 °C Typical device: Rth j-h typ. 2,28 K/W Tj typ. 167 °C Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h= 0,25 K/W.) handbook, full pagewidth 10080 1.5 02 0 4 0 MGP360 2.5

60 Ptot (W)

(K/W) 75 °C 100 °C 125 °C 150 °C 175 °C Tj = 200 °C Th = 120 °C 100 °C 80 °C 60 °C 40 °C 20 °C 0 °C

1998 Feb 09 6

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 CHARACTERISTICS apply to either transistor section unless otherwise specified Tj=2 5°C Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. The graphs apply to either transistor section. Collector-emitter breakdown voltage VBE = 0; IC = 10 mA V (BR)CES 〉 50 V open base; IC = 25 mA V (BR)CEO 〉 27 V Emitter-base breakdown voltage open collector; IE = 5 mA V (BR)EBO 〉 3,5 V Collector cut-off current VBE = 0; VCE = 27 V I CES 〈 10 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO 〉 2m J R BE =1 0Ω ESBR 〉 2m J D.C. current gain(1) typ. 40IC = 0,85 A; VCE = 25 V h FE D.C. current gain ratio of transistor sections IC = 0,85 A; VCE = 25 V 0,67 to 1,5 Collector-emitter saturation voltage(1) IC = 1,7 A; IB = 0,17 A V CEsat typ. 0,75 V Transition frequency at f = 100 MHz(2) −IE = 0,85 A; VCB = 25 V f T typ. 2,5 GHz −IE = 1,7 A; VCB = 25 V f T typ. 2,5 GHz Collector capacitance at f = 1 MHz typ. pF pFIE =Ie = 0; VCB = 25 V C c Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 25 V C re typ. 15 pF Collector-flange capacitance C cf typ. 2 pF

1998 Feb 09 7

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Fig.5 Typical values; VCE = 25 V. handbook, halfpage 20.5 1 IC (A) 10−1 10−2 MGP361

1.5 VBE (V)

Th = 70 °C 25 °C Fig.6 Typical values; Tj=2 5°C. handbook, halfpage 012 MGP362 IC (A) hFE VCE = 25 V 5 V

1998 Feb 09 8

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Fig.7 VCB = 25 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 0123 MGP363 typ fT (GHz) −IE (A) Fig.8 IE =Ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 0 1 02 03 0 100 MGP364 typ C c (pF) VCB (V)

1998 Feb 09 9

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57

APPLICATION INFORMATION

1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. fvision(MHz) V CE (V) I C1 =IC2 (A) T h (°C) d im (1) (dB) P o sync (1) (W) G p (dB) 860 25 0,85 70 −60 〉 6 〉 8,0 70 −60 typ. 7,5 typ. 8,5 70 −55 typ. 10 typ. 8,5 25 −55 typ. 12 typ. 9,0 Fig.9 Class-A test circuit at fvision= 860 MHz. h T.U.T. C11 C15 C17 C18 C14 L10L6 C9 C13 C16 C19 C22 C23 C20 C21 50 Ω50 Ω MGP365 C12C10 L11 L13 L14 L12 +VCC1+VBB1 +VBB2 +VCC2 C4C1

1998 Feb 09 10

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 List of components: Note 1. ATC means American Technical Ceramics. C1 = C6 = C16 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC(1)) C2 = C3 = C20 = C21 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339) C4 = C9 = C13 = C19 = 1,2 to 3,5 pF film dielectric trimmer (cat.no. 2222 809 05001) C5 = C7 = C15 = C17 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221) C14 = C18 = 6,8µF/40 V solid aluminium electrolytic capacitor C22 = C23 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC (1)) C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively. L1 = L2 = L13 = L14 = 50Ω semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on 75 Ω striplines (1,1 mm× 28,0 mm). The centre conductors of the cables L1 and L13 are not connected. L3 = L4 = 52Ω stripline (2,0 mm× 16,5 mm) L5 = L8 = 470 nH microchoke L6 = L7 = 39Ω stripline (3,1 mm× 8,0 mm) L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2× 3,5 mm L10 = L11 = 39Ω stripline (3,1 mm× 34,0 mm) L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric r = 2,74); thickness 1/32”. R1 = 10Ω carbon resistor

1998 Feb 09 11

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.10 Component layout and printed-circuit board for 860 MHz class-A test circuit. handbook, full pagewidth 1164 73 +VBB1 +VCC1 +VCC2+VBB2 input C14 C15 C11C8C5 L3C4 C9 L7 L11 L10 L12 L9 C13 C16 C19 C20 C22 C21C17 C18 C12C10C7 C23 L14 L13 R1L10 L11 output MGP366

1998 Feb 09 12

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Fig.11 Intermodulation distortion (dim)(1) and power gain as a function of output power. handbook, halfpage 5 1 01 52 0 −50 −70 −60 MGP367 dim (dB) Po sync (W) G p (dB) G p dim Fig.12 Cross-modulation distortion (dcm )(2) as a function of output power. handbook, halfpage 01 0 2 0 MGP368 Po sync (W) dcm (%)

1998 Feb 09 13

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Conditions for Figs 11and 12: Typical values; VCE = 25 V; IC =2 × 0,85 A;− − −Th =2 5°C;  Th =7 0°C; fvision= 860 MHz. Ruggedness in push-pull class-A operation The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following conditions: Notes 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal≤− 70 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier−7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (d cm ) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to−20 dB. VCE = 25 V; IC =2 × 0,85 A; Th =7 0°C; Po sync(1)≤ 12,5 W; f = 860 MHz; Rth mb-h= 0,25 K/W. At any other composition of the output signal: PL (r.m.s. value)≤ 5 W. Fig.13 Input impedance (series components). handbook, halfpage 400 650 900 MGP369 f (MHz) xi ri ri, xi (Ω )

1998 Feb 09 14

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Fig.14 Load impedance (series components). handbook, halfpage 400 650 900 MGP370 f (MHz) R L, XL (Ω ) R L XL Fig.15 handbook, halfpage 400 650 900 MGP371 f (MHz) G p (dB)

1998 Feb 09 15

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Conditions for Figs 13, 14 and 15: The graphs apply to either transistor section assuming class-A push-pull operation. Typical values; VCE = 25 V; IC = 0,85 A; Th =7 0°C.

1. Typical values are based on 1 dB gain compression. Using a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% sync input/25% sync output compression in television service (negative f vision(MHz) V CE (V) I C(ZS) (A) T h (°C) P L (W) I C1 =IC2 (A) η (%) G p(1) (dB) 860 25 2 × 0,1 25 12,5 typ. 7,5 38 typ. 1,25 typ. 60 typ. 6,5 860 25 2 × 0,1 70 12,5 typ. 7,0 30 typ. 1,10 typ. 55 typ. 6,0 width T.U.T. C11C8 C14 C16 L10L6 C9 C13 C15 C17 C20 C21 C18 C19 50 Ω50 Ω MGP372 C12C10 L11 L13 L14 L12 +VCC1+VBB1 +VBB2 +VCC2 C4C1 Fig.16 Class-AB test circuit at fvision= 860 MHz.

1998 Feb 09 16

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 List of components: Note 1. ATC means American Technical Ceramics. C1 = C6 = C15 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC(1)) C2 = C3 = C18 = C19 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339) C4 = C9 = C13 = C17 = 1,2 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) C5 = C7 = C14 = C16 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221) C20 = C21 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC (1)) C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively. L1 = L2 = L13 = L14 = 50Ω semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on 75 Ω striplines (1,1 mm× 28,0 mm). The centre conductors of the cables L1 and L13 are not connected. L3 = L4 = 52Ω stripline (2,0 mm× 16,5 mm) L5 = L8 = 470 nH microchoke L6 = L7 = 39Ω stripline (3,1 mm× 8,0 mm) L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2× 3,5 mm L10 = L11 = 39Ω stripline (3,1 mm× 34,0 mm) L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric r = 2,74); thickness 1/32” R1 = 10Ω carbon resistor.

1998 Feb 09 17

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.17 Component layout and printed-circuit board for 860 MHz class-AB test circuit. handbook, full pagewidth 1164 73 +VBB1 +VCC1 +VCC2+VBB2 input C14C11C8C5 L3C4 C9 L7 L11 L10 L12 L9 C13 C15 C17 C18 C20 C19 C16 C12C10C7 C21 L14 L13 R1L10 L11 output MGP373

1998 Feb 09 18

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Fig.18 Typical values; VCE = 25 V; IC(ZS) =2 × 0,1 A; fvision= 860 MHz. handbook, halfpage 05 1 0 MGP374 PS (W) PL (W) Th = 25 °C 70 °C Fig.19 Typical values; VCE = 25 V; IC(ZS) =2 × 0,1 A;−−− Th =2 5°C;  Th =7 0°C; fvision= 860 MHz. handbook, halfpage 02 0 4 0 7.5 2.5 MGP375 PL (W) G p (dB) η (%) G p η

1998 Feb 09 19

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Ruggedness in class-AB operation The BLV57 is capable of withstanding a load mismatch (VSWR≤ 2 through all phases) up to 30 W (r.m.s. value) or (VSWR ≤ 50 through all phases) up to 19 W under the following conditions: VCE = 25 V; Th =7 0°C; f = 860 MHz; Rth mb-h= 0,25 K/W. Fig.20 Input impedance (series components). handbook, halfpage 400 650 900 MGP376 f (MHz) xi ri ri, xi (Ω )

1998 Feb 09 20

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 Fig.21 Load impedance (series components). handbook, halfpage 400 650 900 MGP377 f (MHz) R L, XL (Ω ) XL R L Conditions for Figs 20; 21 and 22: The graphs apply to either transistor section assuming class-AB push-pull operation. Typical values; VCE = 25 V; IC(ZS) = 0,1 A; PL = 17,5 W (P.E.P); Th =7 0°C. Fig.22 handbook, halfpage 400 650 900 MGP378 f (MHz) G p (dB)

1998 Feb 09 21

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT161A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 8 leads SOT161A U 2H D A F A b Mw 3 H 1 M Cw 2 w 1p ABM E Q c q U 1 ee1 C B UNIT A mm Db 2.04 1.77 2.93 2.66 0.18 0.10 10.22 10.00 E 10.22 10.00 e 3.50 17.00 16.00 10.34 10.08 7.27 6.47 c e1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 2.70 2.08 U 1 24.97 24.71 H 1 12.83 12.57 p 3.36 2.92 Q 4.32 4.063.80 inches 0.080 0.070 0.115 0.105 0.007 0.004 0.402 0.394 0.402 0.394 0.138 0.669 0.630 0.407 0.397 0.286 0.082 0.983 0.973 0.505 0.495 0.132 0.120 0.170 0.1600.150 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1998 Feb 09 22

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

1998 Feb 09 23

Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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