BLV45-12

BLV45-12 PHILIPS

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Technical content

Product specification August 1986 DISCRETE SEMICONDUCTORS BLV45/12 VHF power transistor

Philips Semiconductors Product specification VHF power transistor BLV45/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

FEATURES

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile
• gold metallization ensures excellent reliability
• internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =2 5°C in a common-emitter class-B circuit MODE OF OPERATION V CE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 175 45 > 6,5 > 55 PIN CONFIGURATION Fig.1 Simplified outlinbe, SOT119A. handbook, halfpage MSB006 PINNING PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification VHF power transistor BLV45/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value v CBOM max. 36 V Collector-emitter voltage (open base) V CEO max. 16,5 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C max. 9 A peak value; f> 1 MHz I CM max. 27 A Total power dissipation at Tmb =2 5°C; f> 1 MHz P tot max. 90 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. soar. R th mb-h= 0,2 K/W. handbook, halfpage MGP347 IC (A) 11 0 16.5 102 VCE (V) Tmb = 25 °C Th = 70 °C Fig.3 Power/temperature derating curves; R th mb-h= 0,2 K/W. I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz) handbook, halfpage 160 Ptot (W) 200 MGP348

100 Th (°C)

ΙΙ Ι THERMAL RESISTANCE Dissipation = 68 W; Tmb =2 5°C From junction to mounting base (r.f. dissipation) R th j−mb = 1,58 K/W From mounting base to heatsink R th mb−h = 0,2 K/W

Philips Semiconductors Product specification VHF power transistor BLV45/12 CHARACTERISTICS Tj=2 5°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 50 mA V (BR)CBO > 36 V Collector-emitter breakdown voltage open base; IC = 100 mA V (BR)CEO > 16,5 V Emitter-base breakdown voltage open collector; IE = 10 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 16 V I CES < 22 mA Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR > 12,5 mJ D.C. current gain typ. 55VCE = 10 V; IC = 6 A h FE Collector capacitance at f = 1 MHz IE =ie = 0; VCB = 12,5 V C c typ. 130 pF Collector-flange capacitance C cf typ. 3 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V C re typ. 80 pF Fig.4 D.C. current gain versus collector current; Tj=2 5°C. handbook, halfpage 02 0 100 MGP349 hFE

10 IC (A)

VCE = 12.5 V 10 V Fig.5 Output capacitance versus VCB ;IE =ie =0 ; f = 1 MHz; Tj=2 5°C handbook, halfpage 400 200 C c (pF) MGP350

10 VCB (V)

Philips Semiconductors Product specification VHF power transistor BLV45/12

APPLICATION INFORMATION

R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W List of components: Note 1. American Technical Ceramics capacitor type 100B or capacitor of same quality. MODE OF OPERATION VCE V PL W G p dB ηC narrow band; c.w. 12,5 45 > 6,5 > 55 typ. 8,0 typ. 67 C1 = C11 = C12 = 4 to 40 pF film dielectric trimmer (cat.no. 2222 809 07008) C2 = C10 = 10 pF multilayer ceramic chip capacitor(1) C3 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C4 = C5 = 91 pF multilayer ceramic chip capacitor (1) C6 = 820 pF multilayer ceramic chip capacitor(1) C7 = C8 = 2 × 4,7 pF multilayer ceramic chip capacitors(1) in parallel C9 = 100 nF polyester capacitor L1 = strip, 28 mm× 4 mm L2 = 4 turns Cu wire (1,0 mm); int.dia. 4,0 mm; length 7,5 mm; leads 2× 3,5 mm L3 = strip, 22 mm× 6 mm L4 = 1 turn Cu wire (0,8 mm); int.dia. 3,0 mm; leads 2× 9 mm L5 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) L6 = strip, 12 mm× 6 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2× 5 mm L8 = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2× 3 mm L10 = strip, 18 mm× 4 mm L1, L3, L6 and L10 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 inch. R1 = 4,7 Ω± 10%, carbon resistor Fig.6 Class-B test circuit at f = 175 MHz. handbook, full pagewidth MGP351 50 Ω L1 L2 L3 C4C2 T.U.T. C12C8 +VCC C11 C10 L6 L8 L10 50 Ω

Philips Semiconductors Product specification VHF power transistor BLV45/12 The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated by the dotted line, is unetched copper serving as a ground plane. If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to raised al least 0,5 mm to minimize the dielectric losses. Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to provide a direct contact between the copper of the component side and the ground plane. Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit. handbook, full pagewidth MGP352 rivets soldered copper straps ground plane removed Cu strap L5 L9 L10 C12 C11C1 C3 C10 +VCC 162

Philips Semiconductors Product specification VHF power transistor BLV45/12 Fig.8 Load power versus source power. Typical values; VCE = 12,5 V; f = 175 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W handbook, halfpage 0 1 02 03 0 PL (W) MGP353 PS (W) Fig.9 Power gain and efficiency versus load power. Typical values; VCE = 12,5 V; f = 175 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W handbook, halfpage 02 0 4 0 8 0 MGP354 ηC G P ηC (%) PL (W) G P (dB) Ruggedness in class-B operation The BLV45/12 is capable of withstanding a load mismatch (VSWR = 20 through all phases) at rated load power up to a supply voltage of 15,5 V; T h =2 5°C; Rth mb-h= 0,2 K/W. Power slump If Th is increased from 25°C to 70°C the output power slump for constant PS amounts to typ. 7 % (VCE = 12,5 V; f = 175 MHz; Rth mb-h= 0,2 K/W).

Philips Semiconductors Product specification VHF power transistor BLV45/12 Fig.10 Input impedance (series components). Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h= 0,2 K/W. handbook, halfpage 50 100 150 200 MGP355 ri, xi (Ω ) ri xi f (MHz) Fig.11 Load impedance (series components). Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h= 0,2 K/W. handbook, halfpage 50 100 150 200 MGP356 R L XL R L, XL (Ω ) f (MHz) Fig.12 Power gain versus frequency. Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h= 0,2 K/W. handbook, halfpage 50 100 150 200 G P (dB) MGP357 f (MHz)

Philips Semiconductors Product specification VHF power transistor BLV45/12 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT119A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT119A U 2H A F A b Mw 3b1 p w 1 ABM D 1 DU 3 Q c q U 1 C B e M Cw 2H 1 UNIT A mm Db 5.59 5.33 0.18 0.07 12.86 12.59 6.48 22.10 21.08 6.48 6.07 12.76 12.06 7.39 6.32 c eU 2 0.5118.42 qw 1 0.261.02 w 3w 2U 3H 1 18.55 18.28 U 1 25.23 23.95 4.07 3.81 b2b1 5.34 5.08 p 3.31 2.97 Q 4.58 3.98 FH 12.83 12.57 D 1 2.54 2.28 inches 0.220 0.210 0.007 0.003 0.505 0.496 0.255 0.870 0.830 0.255 0.239 0.502 0.475 0.291 0.720 0.993 0.943 0.160 0.150 0.210 0.200 0.130 0.117 0.180 0.157 0.505 0.495 0.100 0.090 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power transistor BLV45/12 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.