BLV33 PHILIPS
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Technical content
Product specification Supersedes data of November 1995
1996 Oct 10
VHF linear power transistor
1996 Oct 10 2
Philips Semiconductors Product specification VHF linear power transistor BLV33
FEATURES
- Diffused emitter ballasting resistors for an optimum temperature profile
- Gold sandwich metallization ensures excellent reliability.
APPLICATIONS
- Primarily intended for use in linear VHF amplifiers for television transmitters and transposers.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 1⁄16" 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. PINNING - SOT147 PIN SYMBOL DESCRIPTION 1 c collector 2 e emitter 3 b base 4 e emitter Fig.1 Simplified outline and symbol. handbook, halfpage MAM270 e c b Top view QUICK REFERENCE DATA RF performance in a common emitter push-pull test circuit. Notes 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. MODE OF OPERATION fvision (MHz) VCE (V) IC , IC(ZS) (A) Th (°C) dim(1) (dB) Po sync(1) (W) G P (dB) sync compr.(2) sync in/sync out (%) CW, class-A 224.25 25 3.2 70 −55 >16.5 >9 25 −55 typ. 26 typ. 9.7 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10 3
Philips Semiconductors Product specification VHF linear power transistor BLV33 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter voltage V BE =0 − 65 V VCEO collector-emitter voltage open base − 33 V VEBO emitter-base voltage open collector − 4V IC collector current (DC) − 12.5 A IC(AV) average collector current − 12.5 A ICM peak collector current f > 1 MHz − 20 A Ptot total power dissipation (DC) T mb =2 5°C − 132 W Prf RF power dissipation f > 1 MHz; T mb =2 5°C − 165 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb(dc)thermal resistance from junction to mounting base (DC dissipation) Pdiss=8 0W ; Tmb =8 2°C; Th =7 0°C 1.46 K/W R th j-mb(rf)thermal resistance from junction to mounting base (RF dissipation) Pdiss=8 0W ; Tmb =8 2°C; Th =7 0°C 1.17 K/W R th mb-h thermal resistance from mounting base to heatsink Pdiss=8 0W ; Tmb =8 2°C; Th =7 0°C 0.15 K/W Fig.2 DC SOAR. (1) Tmb =2 5°C. (2) Th =7 0°C. (3) Second breakdown limit (independent of temperature). handbook, halfpage MGG120 102 (1) 11 0 1 0 2 VCE (V) IC (A) (2) (3) Fig.3 Power derating curves. (1) Continuous DC (including RF class-A) operation. (2) Continuous RF operation. handbook, halfpage200 150 100 (2) (1) MGG119 0 100 50 Ptot (W) Th (°C)
1996 Oct 10 4
Philips Semiconductors Product specification VHF linear power transistor BLV33 Example Nominal class-A operation: VCE = 25 V; IC = 3.2 A; Th =7 0°C. Figure 4 shows: R th j-h= max. 1.60 K/W Tj= max. 198°C. Typical device: R th j-h= typ.1.50 K/W Tj= typ. 190°C. Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. R th mb-h= 0.15 K/W. handbook, full pagewidth 150 2.0 R th j-h (K/W) 1.0
0 Ptot (W)
1.2 1.4 1.6 1.8 10050 T h = 120 100 °C 80 °C 60 °C 40 °C 20 °C 0 °C 75 °C 100 °C 125 °C 150 °C 175 °C Tj = 200 °C
1996 Oct 10 5
Philips Semiconductors Product specification VHF linear power transistor BLV33 CHARACTERISTICS Tj=2 5°C; unless otherwise specified. Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0.02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0.01. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CES collector-emitter breakdown voltage VBE = 0; IC =2 5m A 6 5 −− V V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA 33 −− V V(BR)EBO emitter-base breakdown voltage open collector; IE =1 0m A 4 −− V ICES collector cut-off current V BE = 0; VCE =3 0V −− 1m A hFE DC current gain V CE =2 5V ; IC = 3 A; note 1 15 50 100 VCEsat collector-emitter saturation voltage IC = 6 A; IB = 0.6 A; note 1 − 0.75 − V fT transition frequency V CB =2 5V ;IE = −3A ; f = 100 MHz; note 2 − 680 − MHz transition frequency V CB =2 5V ;IE = −6A ; f = 100 MHz; note 2 − 750 − MHz C c collector capacitance V CB =2 5V ; IE =ie = 0; f = 1 MHz− 155 − pF C re feedback capacitance I C = 100 mA; VCE =2 5V ; f = 1 MHz − 88 − pF C cs collector-stud capacitance − 3 − pF
1996 Oct 10 6
Philips Semiconductors Product specification VHF linear power transistor BLV33 Fig.5 DC current gain as a function of collector current; typical values. Tj=2 5°C. (1) VCE =2 5V . (2) VCE =5V . handbook, halfpage 05 1 5 MGG130
10 IC (A)
(1) (2) Fig.6 Collector capacitance as a function of collector-base voltage; typical values. IE =ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 02 0 4 0 600 200 400 MGG129 VCB (V) C c (pF) Fig.7 Transition frequency as a function of emitter current; typical values. VCB = 25 V; f = 100 MHz; Tj=2 5°C. handbook, halfpage −0 −5 −15 1000 MGG131 −10 200 400 600 800 IE (A) fT (MHz) Fig.8 Collector current as a function of base-emitter voltage; typical values. VCE =2 5V . (1) Th =7 0°C. (2) Th =2 5°C. handbook, halfpage 20.5 1 1.5 10−1 MGG118 VBE (V) IC (A) (1) (2)
1996 Oct 10 7
Philips Semiconductors Product specification VHF linear power transistor BLV33
APPLICATION INFORMATION
RF performance in VHF class-A operation (linear power amplifier) Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. MODE OF OPERATION fvision (MHz) VCE (V) IC (A) Th (°C) dim(1) (dB) Po sync(1) (W) G P (dB) CW, class-A 224.25 25 3.2 70 −55 >16.5 >9 70 −55 typ. 17.5 typ. 9.3 70 −52 typ. 26.5 typ. 9.3 25 −55 typ. 23 typ. 9.7 Fig.9 Class-A test circuit at fvision= 224.25 MHz. handbook, full pagewidth MGG148 +VBB C14 C13 C10 C11 +VCC R2 C9 D.U.T. L2 L5 C12 50 Ω input 50 Ω output
1996 Oct 10 8
Philips Semiconductors Product specification VHF linear power transistor BLV33 List of components used in test circuit(see Figs 9 and 10). Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (ε r = 4.5); thickness1⁄16". COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C14 multilayer ceramic chip capacitor; note 1 680 pF, 500 V C2, C11, C13 film dielectric trimmer 4 to 40 pF 2222 809 08002 C3 film dielectric trimmer 2 to 18 pF 2222 809 09003 C4, C9 multilayer ceramic chip capacitor 680 pF, 50 V 2222 852 13681 C5, C6 multilayer ceramic chip capacitor; note 1 68 pF, 500 V placed 2 mm from transistor edge C7, C8 multilayer ceramic chip capacitor 470 nF, 50 V 2222 856 48474 C10 multilayer ceramic chip capacitor; note 1 24 pF, 500 V C12 solid aluminium electrolytic capacitor 10 µF, 40 V L1 1 1⁄2 turns of closely wound 1.6 mm enamelled Cu wire int. diameter 4.5 mm leads 2× 3m m L2 stripline 30 Ω 6m m × 32.7 mm L3 microchoke 1 µH 4322 057 01080 L4 2 turns of 1.1 mm enamelled Cu wire 27 nH int. diameter 4.5 mm length 2.9 mm leads 2× 5m m L5 stripline 30 Ω 6m m × 24 mm L6 2 turns of 1.1 mm enamelled Cu wire 19 nH int. diameter 3.5 mm length 3.5 mm leads 2× 5m m L2, L5 stripline; note 2 R1, R2 carbon resistor 10 Ω
1996 Oct 10 9
Philips Semiconductors Product specification VHF linear power transistor BLV33 Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit. Dimensions in mm. The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. (1) C10 positioned under C11. handbook, full pagewidth MGG150 C12 L2 L5 C11 C14 C13 C10 (1) +VBB +VCC 117 50 Ω input 50 Ω output
1996 Oct 10 10
Philips Semiconductors Product specification VHF linear power transistor BLV33 Fig.11 Intermodulation distortion and power gain as a functions of output power. VCE = 25 V; IC = 3.2 A; fvision= 224.25 MHz. (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage 10 20 30 40 −44 −64 −48 MGG115 −52 −56 −60 G p (dB) dim (dB) Po sync (W) (2) (2) G p dim (1) (1) Fig.12 Cross-modulation distortion as a function of output power. VCE = 25 V; IC = 3.2 A; fvision= 224.25 MHz. (1) Th =2 5°C. (2) Th =7 0°C. handbook, halfpage 02 0 4 0 (1)(2) MGG116 Po sync (W) dcm (%) Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level (see Fig.11). Two-tone test method (vision carrier 0 dB, sound carrier−7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm ) is the voltage variation (%) of sound carrier when vision carrier is switched from 0d Bt o−20 dB (see Fig.12). Ruggedness in class-A operation The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to 30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th =7 0°C; f = 224.25 MHz; R th mb-h= 0.15 K/W.
1996 Oct 10 11
Philips Semiconductors Product specification VHF linear power transistor BLV33 Fig.13 Input impedance as a function of frequency (series components); typical values. Class-A operation; VCE = 25 V; IC = 3.2 A; Th =7 0°C. handbook, halfpage2 MGG128 50 250 150 Zi (Ω ) ri xi f (MHz) Fig.14 Load impedance as a function of frequency (series components); typical values. Class-A operation; VCE = 25 V; IC = 3.2 A; Th =7 0°C. handbook, halfpage6 MGG126 50 250 150 ZL (Ω ) R L XL f (MHz) Fig.15 Power gain as a function of frequency; typical values. Class-A operation; VCE = 25 V; IC = 3.2 A; Th =7 0°C. handbook, halfpage30 MGG127 50 250 150 f (MHz) G p (dB)
1996 Oct 10 12
Philips Semiconductors Product specification VHF linear power transistor BLV33 RF performance in VHF class-AB operation (C.W) Note 1. Gain compression point of 1 dB is at typical 90 W (minimum 80 W). Using a 3rd-order amplitude transfer characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television MODE OF OPERATION f (MHz) V CE (V) IC , IC(ZS) (A) Th (°C) PL (W) IC (A) ηC (%) G P (dB)(1) Fig.16 Class-AB test circuit at fvision= 224.25 MHz. handbook, full pagewidth MGG145 +VBB C17 C16 C14 C11 C12 +VCC C10 C13 C15 D.U.T. L3 L5 50 Ω input 50 Ω output
1996 Oct 10 13
Philips Semiconductors Product specification VHF linear power transistor BLV33 List of components used in test circuit(see Fig.16). Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (ε r = 4.5); thickness1⁄16". COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C17 multilayer ceramic chip capacitor; note 1 680 pF, 500 V C2 multilayer ceramic chip capacitor; note 1 39 pF, 500 V C3, C16 film dielectric trimmer 2 to 18 pF 2222 809 09003 C4 multilayer ceramic chip capacitor; note 1 43 pF, 500 V C5 film dielectric trimmer 4 to 40 pF 2222 809 08002 C6, C10 polyester capacitor 330 nF C7, C13 multilayer ceramic chip capacitor 680 pF, 50 V 2222 852 13681 C8, C9 multilayer ceramic chip capacitor; note 1 68 pF, 500 V placed 2.5 mm from transistor edge C11, C12 multilayer ceramic chip capacitor; note 1 27 pF, 500 V placed 7 mm from transistor edge C14 film dielectric trimmer 5 to 60 pF 2222 809 08003 C15 solid aluminium electrolytic capacitor 10 µF, 40 V L1 2 turns of 1.6 mm enamelled Cu wire 25 nH int. diameter 4.3 mm length 3.4 mm leads 2× 5m m L2 4 turns closely wound 1.1 mm enamelled Cu wire 120 nH int. diameter 6 mm leads 2× 5m m L3 stripline; note 2 30 Ω 6m m × 48.8 mm L4 stripline; note 2 48 Ω 3m m × 27 mm at 3 mm from transistor edge L5 stripline; note 2 30 Ω 6 × 42.9 mm L6 2 turns of 1.6 mm enamelled Cu wire 24 nH int. diameter 4 mm length 3.4 mm leads 2× 5m m R1, R2 carbon resistor 10 Ω
1996 Oct 10 14
Philips Semiconductors Product specification VHF linear power transistor BLV33 Fig.17 Load power as a function of source power; typical values. VCE = 28 V; IC(ZS) = 0.1 A; Th =7 0°C; fvision= 224.25 MHz. handbook, halfpage 0 1 02 03 0 120 MGG117 PS (W) PL (W) Fig.18 Power gain and efficiency as functions of load power; typical values. VCE = 28 V; IC(ZS) = 0.1 A; Th =7 0°C; fvision= 224.25 MHz. handbook, halfpage 0 100 7.5 2.5 MGG125 G p (dB) G p PL (W) ηc (%) ηc Ruggedness in class-AB operation The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR≤ 2 through all phases) up to 60 W (RMS) and 90 W (PEP) under the following conditions: VCE = 28 V; Th =7 0°C; f = 224.25 MHz; Rth mb-h= 0.15 K/W.
1996 Oct 10 15
Philips Semiconductors Product specification VHF linear power transistor BLV33 Fig.19 Input impedance (series components); typical values. Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th =7 0°C. handbook, halfpage2 MGG124 50 250 150 Zi (Ω ) xi ri f (MHz) Fig.20 Load impedance (series components); typical values. Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th =7 0°C. handbook, halfpage4 MGG123 50 250 150 ZL (Ω ) R L f (MHz) XL Fig.21 Power gain as a function of frequency; typical values. Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th =7 0°C. handbook, halfpage 50 250 MGG122 150 G p (dB) f (MHz)
1996 Oct 10 16
Philips Semiconductors Product specification VHF linear power transistor BLV33 PACKAGE OUTLINE Fig.22 SOT147. handbook, full pagewidth MBC850 e c b e 13 max 6.5 min (4x) (4x)5.9 5.5 1.9 max 5.30 4.85 13.4 12.6 8.3 max 1/4"x 28 UNF 0.14 5.5 metal BeO ceramic Dimensions in mm. Diameter of clearance hole in heatsink: max. 6.4 mm. Mounting hole to have no burrs at either end. De-burring must leave surface flat; do not chamfer or countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer.
1996 Oct 10 17
Philips Semiconductors Product specification VHF linear power transistor BLV33 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.
1996 Oct 10 18
Philips Semiconductors Product specification VHF linear power transistor BLV33 NOTES
1996 Oct 10 19
Philips Semiconductors Product specification VHF linear power transistor BLV33 NOTES
Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1996 SCA52 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 247 9145, Fax. +7 095 247 9144 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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