BLU99/SL

BLU99 PHILIPS | Alldatasheet

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Product specification March 1993 DISCRETE SEMICONDUCTORS BLU99 BLU99/SL UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

FEATURES

• multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;
• gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D). QUICK REFERENCE DATA R.F. performance at T h =2 5°C in a common-emitter class-B circuit. MODE OF OPERATION VCE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 470 5 > 10,5 > 60 12,5 900 4 typ. 7,0 typ. 60 PIN CONFIGURATION Fig.1 Simplified outline. SOT122A (BLU99). age Top view MBK187 Fig.2 Simplified outline. SOT122D (BLU99/SL). fpage MSB055 PINNING - SOT122A; SOT122D PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) V CBO max. 36 V Collector-emitter voltage (open base) V CEO max. 16 V Emitter-base voltage (open collector) V EBO max. 3 V Collector current d.c. or average I C ;IC(AV) max. 0,8 A peak value; f> 1 MHz I CM max. 2,5 A R.F. power dissipation f> 1 MHz; Tmb =2 5°CP tot (r.f.) max. 19 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C R th mb-h = 0,6 K/W. Fig.3 D.C. SOAR. handbook, halfpage 10−1 MDA372

1 VCE (V)

(A) 10 10 2 Th = 70 °C Tmb = 50 °C Fig.4 Power/temperature derating curves. I Continuous d.c. operation II Continuous r.f. operation (f > 1 MHz). III Short-time r.f. operation during mismatch (f > 1 MHz). handbook, halfpage I II III 100 Ptot (W) 40 60 80 MDA373 Th (°C) THERMAL RESISTANCE (dissipation = 9 W; Tmb =2 5°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 10 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 7,5 K/W From mounting base to heatsink R th mb-h = 0,6 K/W

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL CHARACTERISTICS Tj=2 5°C unless otherwise specified Notes 1. Measured under pulse conditions: tp =5 0 µs;δ< 0,01. 2. Measured under pulse conditions: tp = 300µs;δ< 0,01. Collector-base breakdown voltage open emitter; IC = 10 mA V (BR)CBO > 36 V Collector-emitter breakdown voltage open base; IC = 20 mA V (BR)CEO > 16 V Emitter-base breakdown voltage open collector; IE = 1 mA V (BR)EBO > 3V Collector cut-off current VBE = 0; VCE = 16 V I CES < 5m A Second breakdown energy; L = 25 mH; f = 50 Hz R BE =1 0Ω ESBR > 1m J D.C. current gain(2) typ. 100IC = 0,6 A; VCE = 10 V h FE Transition frequency at f = 500 MHz(1) IC = 0,6 A; VCE = 12,5 V f T typ. 4,0 GHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 12,5 V C c typ. 7,5 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V C re typ. 5 pF Collector-stud capacitance C cs typ. 1,2 pF

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.5 V CE = 10 V; Tj=2 5°C; typ. values. handbook, halfpage 120 0.8 hFE IC (A) 1.6 2.4 MDA374 Fig.6 V CB = 12,5 V; f = 500 MHz; Tj=2 5°C; typ. values. handbook, halfpage 0.4 0.8 1.2 fT (GHz) 1.6 MDA375 IE (A) Fig.7 IE =ie = 0; f = 1 MHz; typ. values. handbook, halfpage 02 0 48 1 2 C c (pF) VCB (V) MDA376

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL APPLICATION INFORMATION (part I) List of components: Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality. MODE OF OPERATION VCE V PL W PS W G p dB IC A ηC narrow band; c.w. 12,5 5 < 0,45 > 10,5 < 0,665 > 60 typ. 0,32 typ. 12 typ. 0,60 typ. 66 C1 = 2,7 pF multilayer ceramic chip capacitor(1) C2 = C7 = C8 = 1,4-5,5 pF film dielectric trimmer (cat.no. 2222 809 09001) C3 = 7,5 pF multilayer ceramic chip capacitor(1) C4 = 2-9 pF film dielectric trimmer (cat.no. 2222 809 09002) C5 = 100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101) C6 = 100 nF metallized film capacitor (cat. no. 2222 352 45104) L1 = stripline, 22,5 mm× 6,0 mm L2 = 1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2× 5 mm L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L5 = 4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2× 5 mm L6 = stripline, 10,0 mm× 6,0 mm L7 = 1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2× 5 mm R1 = R2 = 10 Ω metal film resistor, 0,25 W L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (ε r = 2,74) and a thickness of1⁄16 inch. Fig.8 Class-B test circuit at f = 470 MHz. handbook, full pagewidth MDA365 T.U.T. C3C4 C5 C6 L3 R1 50 Ω 50 Ω +VCC /,/, /,/, /,/,

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.9 Printed circuit board and component layout for 470 MHz. handbook, full pagewidth 100 mm 58 mm rivets +VCC MDA366 L2C1 C3 C2 C8 C7L4 L1 L6 The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as ground plane. Earth connections are made by hollow rivets.

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.10 Output power. f = 470 MHz; class-B operation; Th =2 5°C; typ. values. handbook, halfpage 0 0.4 PL (W) PS (W)0.8 1.2 MDA377 VCE = 12.5 V 7.5 V Fig.11 Power gain and efficiency; f = 470 MHz; class-B operation; Th =2 5°C; typ. values. handbook, halfpage PL (W) 100 0 0 G p (dB) ηC (%) ηC ηC MDA378 G p G p RUGGEDNESS: The device is capable of withstanding a load mismatch with VSWR = 50 (all phases) up to a supply voltage of 15,5 V at rated load power.

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.12 Input impedance (series components). VCE = 12,5 V; PL = 5 W; Th =2 5°C; f = 400-520 MHz; typical values. handbook, halfpage 400 440 xi ri f (MHz) Zi (Ω ) 480 560 520 MDA379 Fig.13 Load impedance (series components). VCE = 12,5 V; PL = 5 W; Th =2 5°C; f = 400-520 MHz; typical values. handbook, halfpage 400 440 480 ZL (Ω ) f (MHz) 560 520 MDA380 XL R L Fig.14 Power gain. VCE = 12,5 V; PL = 5 W; Th =2 5°C; f = 400-520 MHz; typical values. handbook, halfpage 400 440 480 G p (dB) f (MHz) 560 520 MDA381

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL APPLICATION INFORMATION (part II) R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 900 MHz; Th =2 5°C MODE OF OPERATION VCE V PL W PS W G P dB IC A ηC Fig.15 Class-B test circuit at f = 900 MHz. handbook, full pagewidth MDA382 BLU99 C2 C3 C5 L1 L2 L5 L4R1 50 Ω 50 Ω C6 C10 L7 L10 C12 +VCC = 12.5 V /,/, /,/, /,/,/, /,/,/, /,/, C11 C13

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL List of components: Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality. C1 = C12 = 33 pF multilayer ceramic chip capacitor(1) C2 = C13 = 1,4-5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = C11 = 1,2-3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) C4 = C5 = C10 = 6,2 pF multilayer ceramic chip capacitor (1) C6 = 1 pF multilayer ceramic chip capacitor(1) C7 = 10 pF ceramic feed-through capacitor C8 = 330 pF ceramic feed-through capacitor C9 = 2,2 µF tantalum electrolytic capacitor L1 = stripline, 21,0 mm× 1,85 mm L2 = stripline, 5,0 mm× 1,85 mm L3 = 60 nH, 4 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm L4 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 4312 020 36642) L5 = stripline, 11,3 mm× 6,0 mm L6 = stripline, 10,0 mm× 6,0 mm L7 = stripline, 15,9 mm× 1,85 mm L8 = 280 nH, 15 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm L10 = stripline, 28,0 mm× 1,85 mm R1 = R2 = 10 Ω metal film resistor, 0,25 W L1, L2, L5, L6, L7 and L10 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric r = 2,74) and thickness of1⁄32 inch.

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.16 Printed circuit board and component layout for a 900 MHz test circuit. handbook, full pagewidth VCC 128.5 mm 80 mm rivets E E soldered copperstraps E E C1 C12 C2 C13 L3 C4 C7 C8 C10 C11 R1L4 C5 C6 BC BC MDA383 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane. RUGGEDNESS The device is capable of withstanding a load mismatch with VSWR = 50 (all phases) up to a supply voltage of 15,5 V at rated load power.

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.17 Output power. f = 900 MHz; VCE = 12,5 V; class-B operation; Th =2 5°C; typ. values. handbook, halfpage 0 0.4 0.8 PL (W) PS (W) 1.6 1.2 MDA384 Fig.18 Power gain and efficiency. f = 900 MHz; VCE = 12,5 V; class-B operation; Th =2 5°C; typ. values. handbook, halfpage 100 G p (dB) MDA385 PL (W) G p ηC ηC (%)

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL Fig.19 Input impedance (series components). f = 800-960 MHz; VCE = 12,5 V; PL = 4 W; Th =2 5°C; typ. values. handbook, halfpage 800 1000 840 Zi (Ω ) 880 920 960 MDA386 f (MHz) xi ri Fig.20 Load impedance (series components). f = 800-960 MHz; VCE = 12,5 V; PL = 4 W; Th =2 5°C; typ. values. handbook, halfpage 800 1000 840 ZL (Ω ) 880 920 960 MDA387 f (MHz) XL R L Fig.21 Power gain. handbook, halfpage 800 850 900 G p (dB) f (MHz) 1000 950 MDA388

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL PACKAGE OUTLINES UNIT A D 1 W REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 8-32 UNC α 90° SOT122A 97-04-18 H b H L detail X Db 5.85 5.58 0.18 0.14 5.97 4.74 cM 1 M 1.02 NN 3 11.82 11.04 w 1 0.381 Q 3.38 2.74 3.86 2.92 H 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 7.50 7.23 6.48 6.22 7.24 6.93 L N 1 max. 0 5 10 mm scale D 2 M ceramic BeO metal W Q A N N 1 N 3 M 1 D c X Studded ceramic package; 4 leads SOT122A α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A w 1 AM D 1 D 2

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL UNIT A D 2 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm α 90° SOT122D 97-04-18 H b H L Db 5.85 5.58 4.17 3.27 0.18 0.14 7.50 7.23 7.24 6.98 cQ 1.58 1.27 H 27.56 25.78 9.91 9.14 L 0 5 10 mm scale Q A D 2 D c Studless ceramic package; 4 leads SOT122D α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLU99 BLU99/SL DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.