BLU97 PHILIPS | Alldatasheet

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLU97 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLU97

DESCRIPTION

N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band.

FEATURES

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability. The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to T h = 25°C in a common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 470 7 > 8,5 > 55 PIN CONFIGURATION Fig.1 Simplified outline. SOT122A. handbook, halfpage Top view MBK187 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLU97 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) V CBO max. 36 V Collector-emitter voltage (open base) V CEO max. 16 V Emitter-base voltage (open collector) V EBO max. 3 V Collector current d.c. or average I C max. 1,2 A (peak value); f> 1 MHz I CM max. 3,6 A Total power dissipation at Tmb =5 2°CP tot(d.c.) max. 17 W f> 1 MHz; Tmb =5 2°CP tot(r.f.) max. 22,5 W Storage temperature T stg −65 to+150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. R th mb-h= 0,6 K/W. handbook, halfpage 10−1 MDA360 11 0 VCE (V) IC (A) 102 Th = 70 °C Tmb = 52 °C Fig.3 Power/temperature derating curves. I Continuous operation II Continuous operation (f > 1 MHz). III Short-time operation during mismatch (f > 1 MHz). handbook, halfpage I II III 40 80 Th (°C) Ptot (W) 160 120 MDA361 THERMAL RESISTANCE Dissipation = 15 W; Tmb = 25°C From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 7,5 K/W (r.f. dissipation) R th j-mb(rf) = 5,6 K/W From mounting base to heatsink R th mb-h = 0.6 K/W

Philips Semiconductors Product specification UHF power transistor BLU97 CHARACTERISTICS Tj=2 5°C unless otherwise specified Note 1. Measured under pulse conditions: tp = 50µs;δ< 1%. Collector-base breakdown voltage, open emitter; IC = 15 mA V (BR)CBO > 36 V Collector-emitter breakdown voltage, open base; IC = 30 mA V (BR)CEO > 16 V Emitter-base breakdown voltage, open collector; IE = 1,5 mA V (BR)EBO > 3V Collector cut-off current, VBE = 0; VCE = 16 V I CES < 7,5 mA Second breakdown energy, L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR > 2,3 mJ D.C. current gain, IC = 0,9 A; VCE = 10 V h FE > 25 typ. 100 Transition frequency at f = 500 MHz(1),−IE = 0,9 A; VCB = 12,5 V f T typ. 4,0 GHz Collector capacitance at f = 1 MHz, IE =ie = 0; VCB = 12,5 V C c typ. 10 pF Feed-back capacitance at f = 1 MHz, IC = 0; VCE = 12,5 V C re typ. 7 pF Collector-stud capacitance C cs typ. 1,2 pF Fig.4 Tj=2 5°C; VCE = 10 V; typical values. handbook, halfpage 120 0.8 IC (A) hFE 1.6 3.2 2.4 MDA362 Fig.5 V CB = 12,5 V; f = 500 MHz; tp =5 0µs; Tj=2 5°C; typical values. handbook, halfpage 4.8 3.2 1.6 0.8 −IE (A) fT (GHz) 1.6 3.2 2.4 MDA363

Philips Semiconductors Product specification UHF power transistor BLU97

APPLICATION INFORMATION

R.F. performance in common-emitter circuit; class-B: f = 470 MHz; Th = 25°C MODE OF OPERATION VCE V PL W PS W G p dB IC A ηC narrow band; c.w. 12,5 7 < 0,99 > 8,5 < 1,0 > 55 typ. 0,55 typ. 11,0 typ. 0,8 typ. 70 Fig.6 IE =ie = 0; f = 1 MHz; typical values. handbook, halfpage 02 0 48 1 2 C c (pF) VCB (V) MDA364 Fig.7 Class-B test circuit at f = 470 MHz. handbook, full pagewidth MDA365 T.U.T. C3C4 C5 C6 L3 R1 50 Ω 50 Ω +VCC /,/, /,/, /,/,

Philips Semiconductors Product specification UHF power transistor BLU97 List of components: Note 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. C1 = 2,7 pF multilayer ceramic chip capacitor(1) C2 = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 7,5 pF multilayer ceramic chip capacitor(1) C4 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C5 = 100 pF multilayer ceramic chip capacitor C6 = 100 nF metallized film capacitor L1 = 38 Ω stripline (22,5 mm× 6,0 mm) L2 = 15 nH; 1 turn Cu wire (1,0 mm); int. dia. 5 mm; leads 2× 5 mm L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L5 = 29 nH; 2 turns enamelled Cu wire (1,0 mm); int. dia. 6 mm; length 3,5 mm; leads 2× 5 mm L6 = 38 Ω stripline (10,0 mm× 6,0 mm) L7 = 7 nH; 1/2 turn Cu wire (1,0 mm); int. dia. 5,0 mm; leads 2× 5 mm R1 = R2 = 10 Ω± 10%; 0,25 W metal film resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric r = 2,74); thickness1⁄16 inch.

Philips Semiconductors Product specification UHF power transistor BLU97 Fig.8 Printed circuit board and component lay-out for 470 MHz class-B test circuit. handbook, full pagewidth 100 mm 58 mm rivets +VCC MDA366 L2C1 C3 C2 C8 C7L4 L1 L6 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by hollow rivets and also by copper straps under the emitters.

Philips Semiconductors Product specification UHF power transistor BLU97 Fig.9 Load power vs. source power. VCE = 12,5 V; f = 470 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 0 0.4 PS (W) PL (W) 0.8 1.2 MDA367 Fig.10 Power gain and efficiency vs. load power. VCE = 12,5 V; f = 470 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 01 0 24 6 G p (dB) 100 ηC (%) ηC MDA368 PL (W) G p RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and T h =2 5°C.

Philips Semiconductors Product specification UHF power transistor BLU97 Fig.11 Input impedance (series components). VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 400 440 600 480 520 560 MDA369 Zi (Ω ) f (MHz) xi ri Fig.12 Load impedance (series components). VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 400 440 600 480 520 560 MDA370 ZL (Ω ) f (MHz) XL R L Fig.13 Power gain vs. frequency. VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th =2 5°C; class-B operation; typical values. handbook, halfpage 400 440 600 480 520 560 MDA371 G p (dB) f (MHz)

Philips Semiconductors Product specification UHF power transistor BLU97 PACKAGE OUTLINE UNIT A D 1 W REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 8-32 UNC α 90° SOT122A 97-04-18 H b H L detail X Db 5.85 5.58 0.18 0.14 5.97 4.74 cM 1 M 1.02 NN 3 11.82 11.04 w 1 0.381 Q 3.38 2.74 3.86 2.92 H 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 7.50 7.23 6.48 6.22 7.24 6.93 L N 1 max. 0 5 10 mm scale D 2 M ceramic BeO metal W Q A N N 1 N 3 M 1 D c X Studded ceramic package; 4 leads SOT122A α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A w 1 AM D 1 D 2

Philips Semiconductors Product specification UHF power transistor BLU97 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.