BLU60-12

BLU60-12 PHILIPS

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Technical content

Product specification March 1986 DISCRETE SEMICONDUCTORS BLU60/12 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLU60/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

FEATURES

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
• internal matching to achieve an optimum wideband capability and high power gain.
• gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =2 5°C in a common-emitter class-B circuit MODE OF OPERATION V CE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 470 60 > 4,4 > 55 PIN CONFIGURATION Fig.1 Simplified outline, SOT119A. handbook, halfpage MSB006 PINNING PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLU60/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) MAXIMUM THERMAL RESISTANCE Dissipation = 72 W; Tamb =2 5°C Collector-base voltage (open emitter) peak value V CBOM max. 36 V Collector-emitter voltage (open base) V CEO max. 16,5 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C max. 12 A (peak value); f> 1 MHz I CM max. 36 A Total power dissipation at Tmb = 25°C; f> 1 MHz P tot max. 110 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C From junction to mounting base (r.f. operation) R th j-mb max. 1,4 K/W From mounting base to heatsink R th mb-h max. 0,2 K/W Fig.2 Power/temperature derating curves. I Continuous operation (f > 1 MHz). II Short-time operation during mismatch (f > 1 MHz). handbook, halfpage 04 0 I 200 200 150 100 80 120 160 MDA345 Prf (W) Th ( °C) II

Philips Semiconductors Product specification UHF power transistor BLU60/12 CHARACTERISTICS Tj=2 5°C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA V (BR)CBO min. 36 V Collector-emitter breakdown voltage open base; IC = 200 mA V (BR)CEO min. 16,5 V Emitter-base breakdown voltage open collector; IE =2 0m A V (BR)EBO min. 4 V Collector cut-off current VBE = 0; VCE =1 6V I CES max. 44 mA Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR min. 15 mJ D.C. current gain VCE = 10 V; IC =8 A h FE min. 15 typ. 60 Collector capacitance at f = 1 MHz IE = ie =0 ;VCB = 12,5 V C c typ. 170 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 C re typ. 100 pF Collector-flange capacitance C cf typ. 3 pF Fig.3 D.C. current gain versus collector current; Tj=2 5°C. handbook, halfpage 01 0 2 0 hFE IC (A) 100 MDA336 VCE = 12.5 V 10 V Fig.4 Output capacitance versus VCB ; IE =ie =0 ; f = 1 MHz. handbook, halfpage 04 2 0 400 300 100 200 81 21 6 MDA337 C c (pF) VCB (V)

Philips Semiconductors Product specification UHF power transistor BLU60/12

APPLICATION INFORMATION

R.F. performance at Th =2 5°C in a common-emitter class-B circuit List of components: Notes 1. American Technical Ceramics capacitor type B or capacitor of the same quality. 2. Idem type A. MODE OF OPERATION V CE V f MHz PL W G p dB ηC narrow band; c.w. 12,5 470 60 > 4,4 typ. 5,5 > 55 typ. 62 C1 = C13 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 12 pF multilayer ceramic chip capacitor (1) C4 = C5 = 8, 2 pF multilayer ceramic chip capacitor(2) C6 = C7 = 15 pF multilayer ceramic chip capacitor(1) C8 = 110 pF multilayer ceramic chip capacitor(1) C9 = 3× 100 nF multilayer ceramic chip capacitor in parallel C10 = 2,2µF (35 V) electrolytic capacitor C12 = 5,6 pF multilayer ceramic chip capacitor(1) L1 = 34,6Ω stripline (17 mm× 4 mm) L2 = L5 = 25,3 stripline (6 mm× 6 mm) L3 = 45 nH; 4 turns, closely wound enamelled Cu-wire (0,5 mm); int. dia. 2,5 mm; leads 2× 5 mm L4 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = 29,2Ω stripline (25,5 mm× 5 mm) L7 = 10 nH; 1 turn Cu-wire (1,0 mm); int. dia. 5 mm; leads 2× 5 mm R1 = 1Ω± 5% (0,4 W) metal film resistor R2 = 10Ω± 5% (1,0 W) metal film resistor handbook, full pagewidth MDA338 D.U.T. C4C2 L1 L2 50 Ω 50 Ω C12 C13 C11 C10 +VCC R2C9 /,/, /,/, /,/, /,/, /,/, /,/,/, Fig.5 Class-B test circuit at f = 470 MHz.

Philips Semiconductors Product specification UHF power transistor BLU60/12 Fig.6 Printed circuit board and component layout for 470 MHz class-B test circuit. handbook, full pagewidth 97 mm 70 mm MDA339 rivets rivets Cu - straps L5L2 C5C3 C7 C12 C13 C6C4 C11C2 +VCC C10 The circuit and the components are on one side of the PTFE fibre-glass board; the other side is unetched copper serving as a ground plane. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact between the copper on the component side and the ground plane.

Philips Semiconductors Product specification UHF power transistor BLU60/12 Fig.7 Load power versus source power. Typical values; VCE = 12,5 V; f = 470 MHz; Th =2 5°C ( ) and 70°C (− − −); Rth mb-h= 0,2 K/W; class-B operation. handbook, halfpage 01 0 PS (W) 20 40 100 PL (W) MDA346 Fig.8 Power gain and efficiency versus load power. Typical values; VCE = 12,5 V; f = 470 MHz; Th =2 5°C ( ) and 70°C (− − −); Rth mb-h= 0,2 K/W; class-B operation. handbook, halfpage PL (W) G p (dB) 50 90 70 MDA347 G p ηC (%) ηC RUGGEDNESS The BLU60/12 is capable of withstanding a full load mismatch (VSWR = 50 through all phases) up to 70 W under the following conditions; V CE = 15,5 V; f = 470 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W.

Philips Semiconductors Product specification UHF power transistor BLU60/12 Fig.9 Input impedance (series components). Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W; class-B operation. handbook, halfpage 400 440 480 520 MDA348 xi ri f (MHz) Zi (Ω ) Fig.10 Load impedance (series components). Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W; class-B operation. handbook, halfpage 400 440 480 520 MDA349 xi ri f (MHz) ZL (Ω ) Fig.11 Power gain versus frequency. Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W; class-B operation. handbook, halfpage 400 450 500 G p (dB) f (MHz) 600 550 MDA350

Philips Semiconductors Product specification UHF power transistor BLU60/12 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT119A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT119A U 2H A F A b Mw 3b1 p w 1 ABM D 1 DU 3 Q c q U 1 C B e M Cw 2H 1 UNIT A mm Db 5.59 5.33 0.18 0.07 12.86 12.59 6.48 22.10 21.08 6.48 6.07 12.76 12.06 7.39 6.32 c eU 2 0.5118.42 qw 1 0.261.02 w 3w 2U 3H 1 18.55 18.28 U 1 25.23 23.95 4.07 3.81 b2b1 5.34 5.08 p 3.31 2.97 Q 4.58 3.98 FH 12.83 12.57 D 1 2.54 2.28 inches 0.220 0.210 0.007 0.003 0.505 0.496 0.255 0.870 0.830 0.255 0.239 0.502 0.475 0.291 0.720 0.993 0.943 0.160 0.150 0.210 0.200 0.130 0.117 0.180 0.157 0.505 0.495 0.100 0.090 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLU60/12 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.