BLF900S-110 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 2003 Sep 22

2004 Feb 04

BLF900-110; BLF900S-110 Base station LDMOS transistors M3D379 M3D461

2004 Feb 04 2

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110

FEATURES

  • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz and I DQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at± 750 kHz: – Output power = 24 W (AV) – Gain = 15 dB – Efficiency = 27% – ACPR = −45 dBc at 750 kHz and BW = 30 kHz.
  • 110 W CW performance
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
  • Designed for broadband operation (800 to 1000 MHz)
  • Internally matched for ease of use.

APPLICATIONS

  • RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.

DESCRIPTION

110 W LDMOS power transistor for base station

applications at frequencies from 800 to 1000 MHz. PINNING - SOT502A PINNING - SOT502B PIN DESCRIPTION 1 drain 2 gate 3 source; connected to flange handbook, halfpage Top view MBK394 2 3 Fig.1 Simplified outline SOT502A (BLF900-110). PIN DESCRIPTION 1 drain 2 gate 3 source; connected to flange Top view MBL105 Fig.2 Simplified outline SOT502B (BLF900S-110). Leads are gold-plated. QUICK REFERENCE DATA Typical RF performance at Th =2 5°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) (dBc) ACPR 750 (dBc) 2-tone, class-AB f 1 = 890.0; f2 = 890.1 27 100 (PEP) 17 38 −33 − CDMA (IS95) 881.5 27 24 (AV) 15 27 −− 45

2004 Feb 04 3

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110

ORDERING INFORMATION

In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj=2 5°C unless otherwise specified. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BLF900-110 − Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF900S-110 − Earless flanged LDMOST ceramic package; 2 leads SOT502B SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage −± 15 V Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-c) thermal resistance from junction to case Th =2 5°C, PL = 160 W (AV), note 1 0.9 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 75 −− V VGSth gate-source threshold voltage V DS = 10 V; ID = 250 mA 4.5 − 5.5 V IDSS drain-source leakage current V GS = 0; VDS =2 8V −− 3 µA IDSX on-state drain current V GS =V GSth +9V ; VDS =1 0V 3 1 −− A IGSS gate leakage current V GS = ±15 V; VDS =0 −− 0.5 µA gfs forward transconductance V DS = 20 V; ID = 7.5 A − 7 − S R DSon drain-source on-state resistance VGS =V GSth + 9 V; ID =9A − 90 − m Ω

2004 Feb 04 4

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. VDS = 27 V; f = 890 MHz; Th =2 5°C; unless otherwise specified. Note 1. Refer to RF Gain grouping table. RF Gain grouping Notes 1. 0.2 dB overlap is allowed for measurement repeatability. 2. For 2-tone at f 1 = 890 MHz; f2 = 890.1 MHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Mode of operation: 2-tone CW, 100 kHz spacing, IDQ = 700 mA G p power gain P L = 100 W (PEP) 16 17 (1) − dB ηD drain efficiency 35 38 − % IRL input return loss −− 9< −6d B d3 third order intermodulation distortion −− 33 −27 dBc ruggedness VSWR = 10 : 1 through all phases; PL = 125 W (PEP) no degradation in output power Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13), IDQ = 575 mA G p power gain P L =2 4W( A V ) − 15 − dB ηD drain efficiency P L =2 4W( A V ) − 27 − % ACPR 750 adjacent channel power ratio at BW = 30 kHz −− 45 − dBc CODE (1) GAIN (2) (dB) MIN. MAX. B 16.0 16.5 C 16.5 17.0 D 17.0 17.5 E 17.5 18.0

2004 Feb 04 5

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 handbook, halfpage22 MLE343 G p (dB) G p Pout (W) 103102 ηD (%) ηD Fig.3 Power gain and efficiency as functions of load power; typical values. VDS = 27 V; IDQ = 700 mA; f = 890 MHz. handbook, halfpage 04 0 PL(PEP) (W) G p (dB) 80 120 ηD (%) MLE344 G p ηD Fig.4 Power gain and efficiency as functions of peak envelope load power; typical values. VDS = 27 V; IDQ = 700 mA; f1 = 890.0 MHz; f2 = 890.1 MHz. handbook, halfpage0 −60 −40 −20 MLE345 dim (dBc) PL(PEP) (W) 103102 (1) (2) (3) VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz. Fig.5 Third order intermodulation distortion as a function of peak envelope load power; typical values. (1) IDQ = 600 mA. (2) I DQ = 800 mA. (3) I DQ = 700 mA. handbook, halfpage0 −80 −40 −20 −60 MLE346 11 0 PL(PEP) (W) dim (dBc) 103102 (1) (3) (2) VDS =2 7V ;IDQ = 700 mA; f1 = 890.0 MHz; f2 = 890.1 MHz. Fig.6 Third order intermodulation distortion as a function of peak envelope load power; typical values.

2004 Feb 04 6

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 handbook, halfpage 0.86 0.87 ri xi f (GHz) ZI (Ω ) 0.88 0.9 1.5 0.5 −1.5 −2.5 −0.5 0.89 MLE348 Fig.7 Input impedance as a function of frequency (series components); typical values. Class-AB operation; VDS = 27 V; IDQ = 700 mA; PL = 100 W. Values comprised for different parameters. handbook, halfpage 0.86 0.87 R I XL f (GHz) ZL (Ω ) 0.88 0.9 2.5 1.5 0.89 MLE349 Fig.8 Input impedance as a function of frequency (series components); typical values. Class-AB operation; VDS = 27 V; IDQ = 700 mA; PL = 100 W. Values comprised for different parameters. 24 32 G p (dB) ηD (%) ACPR (dB) Pout (dBm) −40 −50 −70 −80 −60 mle347 ADJ G p ALT ηD Fig.9 Single carrier CDMA performance as a function of output power. VDS =2 7V ; IDQ = 575 mA; f = 881.5 MHz. Test signal: Single carrier IS-97 CDMA with PAR = 9.5 dB at 0.01 % (pilot, paging, sync, 6 traffic channels with Walsh codes 8-13). ADJ at 750 kHz offset in 30 kHz BW; ALT at 1.98 MHz offset in 30 kHz BW. handbook, halfpage MGS998 ZL drain gate ZIN Fig.10 Definition of transistor impedance.

2004 Feb 04 7

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... mle351 RF in C4 C10 C14 C15 C16 C18 C19 L6L5 C7 C11 C1 C17 D.U.T. RF out L8 L 9 L 10 L 11 L 3 Vdd L 12 C13 C12 L7 L2 R2 L1 Fig.11 Test circuit for 860 to 900 MHz operation.

2004 Feb 04 8

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 mle350 PHILIPS

900 MHz Input

Rev. 1 PHILIPS

900 MHz Output

Rev. 1 +V9 L8 L9 L10 L11 L12L7L6L5 58.5 58.5 C7 C11 C14 C16 C17 C10 C18 C19 R3 Vdd C12 C13 PHILIPS Rev. 1 PHILIPS Rev. 1 C12 C13 C14 C15 Fig.12 Component layout for 860 to 900 MHz test circuit. Dimensions in mm. The components are situated on one side of the copper-clad Ultralam 2000 printed-circuit board (εr = 2.5); thickness = 31 mm. The other side is unetched and serves as a ground plane.

2004 Feb 04 9

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 List of components(see Figs 11 and 12) Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. Mounted flat. 3. Striplines are on a double copper-clad Ultralam 2000 printed-circuit board (ε r = 2.5); thickness = 0.31 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS C1 multilayer ceramic chip capacitor; note 1 30 pF C2, C12 multilayer ceramic chip capacitor; note 1 47 pF C3, C13 multilayer ceramic chip capacitor; note 1 300 pF C4 multilayer ceramic chip capacitor; note 1 10 pF C5 multilayer ceramic chip capacitor; note 1 3 pF C6, C7, C15 trimmer capacitors (Tekelec); note 2 0.8 to 8 pF C8 multilayer ceramic chip capacitor; note 1 20 nF C9 tantalum capacitor 10 µF; 35 V C10, C11 multilayer ceramic chip capacitor; note 1 13 pF C14 multilayer ceramic chip capacitor; note 1 8.2 pF C16 trimmer capacitor 0.5 to 4.5 pF C17 multilayer ceramic chip capacitor; note 1 56 pF C18 tantalum capacitor; low ESR 10 µF; 35 V C19 electrolytic capacitor 220 µF; 40 V L1 ferrite bead (long) grade 4S2 L2 3 turn ind. copper wire 1 mm; int dia = 4.5 mm L3 4 turn ind. copper wire 1 mm; int dia = 3 mm L4 ferrite bead (short) grade 4S2 L5 stripline; note 3 Z 0 =5 0Ω 2 x 17.2 mm L6 stripline; note 3 Z 0 =5 0Ω 2 x 25.4 mm L7 stripline; note 3 Z 0 =5 0Ω 5.6 x 17.4 mm L8 stripline; note 3 Z 0 =5 0Ω 16 x 10.2 mm L9 stripline; note 3 Z 0 =1 0Ω 16 x 10.2 mm L10 stripline; note 3 Z 0 =2 5Ω 5.6 x 17.4 mm L11 stripline; note 3 Z 0 =5 0Ω 2 x 25.4 mm L12 stripline; note 3 Z 0 =5 0Ω 2 x 17.2 mm R1 SMD resistor 8.2 Ω, 0.1 W R2 SMD resistor 4.7 Ω , 0.1 W R3 metal film resistor 10 Ω , 0.6 W

2004 Feb 04 10

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 PACKAGE OUTLINES REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT502A 99-12-28 03-01-10 0 5 10 mm scale Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A p L A F b D U 2H Q c D 1 E A C q U 1 C B M Mw 2 UNIT A mm Db 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c U 2 0.25 0.5127.94 qw 2w 1F 1.14 0.89 U 1 34.16 33.91 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 EE 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 D 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) w 1 ABM M M

2004 Feb 04 11

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT502B 99-12-28 03-01-10 0 5 10 mm scale Earless flanged LDMOST ceramic package; 2 leads SOT502B A F b D U 2 L H Q c D 1 E D U 1 D M Mw 2 UNIT A mm Db 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c U 2 0.25 w 2F 1.14 0.89 U 1 20.70 20.45 L 5.33 4.32 Q 1.70 1.45 EE 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 D 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.0100.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

2004 Feb 04 12

Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified

© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R77/02/pp13 Date of release:2004 Feb 04 Document order number: 9397 750 12171