BLF888 NXP | Alldatasheet
Document overview
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Technical content
1.1 General description
excellent ruggedness of this device makes it ideal for digital transmitter applications. [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
1.2 Features and benefits
Table 1. Application information during transport and handling.
1.3 Applications
Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
[1] R th(j-c) is measured under RF conditions. [1] I D is the drain current. [2] Capacitance values without internal matching. Table 5. Thermal characteristics Table 6. DC characteristics Tj =2 5 C unless otherwise specified. Table 7. RF characteristics Th =2 5 C unless otherwise specified.
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
6.1 Ruggedness in class-AB operation
power. Ruggedness is measured in the application circuit as described in Section 8. Table 7. RF characteristics …continued Th =2 5 C unless otherwise specified.
Product data sheet Rev. 04 — 29 April 2010 5 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 2. 2-Tone power gain and drain efficiency as function of load power; typical values Fig 3. 2-Tone power gain and third order intermodulation distortion as function of load power; typical values PL (W) 0 400 300100 200 001aak641 Gp (dB) η D (%) Gp ηD PL (W) 0 400 300100 200 001aak642 Gp (dB) IMD3 (dBc) −40 −20 −50 −30 −10 −60 Gp IMD3
Product data sheet Rev. 04 — 29 April 2010 6 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor
7.1.2 DVB-T
7.2 Broadband RF figures
7.2.1 2-Tone VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 4. DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values Fig 5. DVB-T peak-to-average ratio and drain efficiency as function of load power; typical values PL (W) 0 100 200 300 350 25015050 001aak643 Gp (dB) IMD shldr (dBc) −40 −20 −60 −30 −10 −50 Gp IMDshldr PL (W) 0 100 200 300 350 25015050 001aak644 PAR (dB) ηD (%) −10 −50 −30 PAR ηD PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8. PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a common source broadband test circuit as described in Section 8 Fig 6. 2-Tone power gain and drain efficiency as function of frequency; typical values Fig 7. 2-Tone power gain and third order intermodulation distortion as function of frequency; typical values f (MHz) 400 900 800600 700500 001aak645 Gp (dB) ηD (%) Gp ηD f (MHz) 400 900 800600 700500 001aak646 Gp (dB) IMD3 (dBc) −30 −40 −20 −10 −35 −45 −25 −15 −50 Gp IMD3
7.2.2 DVB-T
7.3 Impedance information
Table 8. Typical push-pull impedance i and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
Table 8. Typical push-pull impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
7.4 Reliability
TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / . Table 9. List of components For test circuit, see Figure 12, Figure 13 and Figure 14.
[1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. thickness copper plating = 35 m. Table 9. List of components …continued For test circuit, see Figure 12, Figure 13 and Figure 14.
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Product data sheet Rev. 04 — 29 April 2010 11 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor See Table 9 for a list of components. Fig 12. Class-AB common-source broadband amplifier; V D1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages 001aak650 +VG1(test) +VD1(test) +VD2(test) R3 C34 C33 L33 C32 C31 C30 C19 C20 C9 C15 C8 50 Ω50 Ω L4 C21 C22 C13 C16C14 C2 C4 C7C5 C11 C10C12 C17 C18 C36 +VG2(test) R4 C35 C37 L32 L30 L1 L31
Product data sheet Rev. 04 — 29 April 2010 12 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor See Table 9 for a list of components. Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier See Table 9 for a list of components. Fig 14. Component layout for cl ass-AB common source amplifier 001aak651 L33 L32 L32 105 mm mm L31 L30 L30 L31 001aak652 +VG1(test) +VD1(test) +VD2(test)+VG2(test) R7 R1 C19 C17 C18 6.5 mm C20 C34 C36 C37 C32 C31 C2 C4 19.5 mm 2 mm C5 C6 C11 C21 C22 C21 C12 C13 C14 C15 C16 C10 C1 C3 C30 C33 50 Ω 50 Ω 9 mm 31.5 mm C35
Product data sheet Rev. 04 — 29 April 2010 13 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 9. Package outline Fig 15. Package outline SOT979A ReferencesOutline version European projection Issue date IEC JEDEC JEITA SOT979A sot979a_po Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A E c Q B C A e q L b H p w1 A B w2 C A D F Unit(1) mm max nom min 5.77 4.80 11.81 11.56 31.55 30.94 31.37 31.12 10.29 10.03 10.29 10.03 1.969 1.689 17.50 17.25 3.86 3.35 41.28 41.02 10.29 10.03 A Dimensions bc 0.15 0.10 DD
1 EE 1
0.51 w2e 13.72 FH H 1 25.53 25.27 Lp 3.30 3.05 Q 3.02 2.77 q 35.56 U 1 U2 0.25 inches max nom min 0.227 0.189 0.465 0.455 1.242 1.218 1.235 1.225 0.405 0.395 0.405 0.395 0.078 0.067 0.689 0.679 0.152 0.132 1.625 1.615 0.405 0.395 0.006 0.004 0.020 0.25 0.010 0.540 1.005 0.995 0.130 0.120 0.119 0.109 1.400 0.010 w 0 5 10 mm scale Note 1. millimeter dimensions are derived from the original inch dimensions. 08-04-24 08-09-04
Table 10. Abbreviations Table 11. Revision history
- Table 7 on page 3: a correction was made to the minimum value of PL(PEP). BLF888_3 20100211 Product data sheet - BLF888_2 BLF888_2 20091022 Preliminary data sheet - BLF888_1 BLF888_1 20081216 Objective data sheet - -
Product data sheet Rev. 04 — 29 April 2010 15 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 04 — 29 April 2010 16 of 17 NXP Semiconductors BLF888 UHF power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
12.4 Licenses
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties.
UHF power LDMOS transistor © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 April 2010 Document identifier: BLF888_4 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents