BLF881 | DigiCamel IC Datasheet

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BLF881 NXP | Alldatasheet

Document overview

Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 18

Technical content

1.1 General description

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

1.2 Features

Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. during transport and handling.

1.3 Applications

Table 2. Pinning Table 3. Ordering information

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. [1] R th(j-c) is measured under RF conditions. [1] I D is the drain current. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Table 7. RF characteristics Th = 25 °C unless otherwise specified.

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. Table 7. RF characteristics …continued Th = 25 °C unless otherwise specified.

7.1 Narrowband RF figures

7.1.1 CW 7.1.2 2-Tone VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 2. CW power gain and drain efficiency as function of load power; typical values PL (W) 0 200 16080 12040 001aal07523 Gp (dB) ηD (%) Gp ηD VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. Fig 3. 2-Tone power gain and drain efficiency as function of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values PL(AV) (W) 0 160 12040 80 0001aal07623 Gp (dB) η D (%) Gp ηD PL(AV) (W) 0 160 12040 80 001aal077 −40 −20 IMD3 (dBc) −60

7.1.3 DVB-T

VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. (1) Lower adjacent channel (2) Upper adjacent channel Fig 5. DVB-T power gain and drain efficiency as function of average load power; typical values Fig 6. DVB-T shoulder distance as a function of average load power; typical values PL(AV) (W) 09 0 6030 001aal07823 Gp (dB) η D (%) Gp ηD 001aal079 PL(AV) (W) 09 0 6030 −30 −20 −40 −10 IMDshldr (dBc) −50 (1) (2)

7.2 Broadband RF figures

7.2.1 DVB-T

7.3 Ruggedness in class-AB operation

The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. Fig 7. DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values Fig 8. DVB-T power gain and shoulder distance as function of frequency; typical values f (MHz) 400 900 800600 700500 001aal080 7.0 8.0 9.0 PAR (dB) 6.0 η D (%) PAR ηD f (MHz) 400 900 800600 700500 001aal081 Gp (dB) −30 −20 −40 −10 IMDshdr (dBc) −50 Gp IMDshdr

7.4 Reliability

TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ. (1) T j = 100 °C (2) T j = 110 °C (3) T j = 120 °C (4) T j = 130 °C (5) T j = 140 °C (6) T j = 150 °C (7) T j = 160 °C (8) T j = 170 °C (9) T j = 180 °C (10) T j = 190 °C (11) T j = 200 °C Fig 9. BLF881 electromigration 001aal082 103 102 105 104 106 Y ears IDS(DC) (A) 0 642

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. thickness copper plating = 35 μm. Table 8. List of components For test circuit, see Figure 10, Figure 11 and Figure 12.

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 10 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor See Table 8 for a list of components. Fig 10. Class-AB common-source broadband amplifier 001aaj288 L20 L1 L2 L3 L4 L5L21L22 L23 C20 C23 C22C24 C21 C25 C850 Ω 50 Ω C27 C26 VGG VDD C10 C11 C12 C4 C5 C6 C7

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 11 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier 001aaj289 40 mm 40 mm 76.2 mm

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 12 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor See Table 8 for a list of components. Fig 12. Component layout for class-AB common source amplifier 001aaj290 C26 C25 C23 C21 C20 C22 C24 L23 L23 L21 L20 L1 L2 C27 C11 C12 C4 C8 C10

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 13 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 9. Package outline Fig 13. Package outline SOT467C REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT467C 99-12-06 99-12-28 0 5 10 mm scale Flanged LDMOST ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 D A U2 E p b H Q F c UNIT QcD 9.27 9.02 5.92 5.77 E 5.97 5.72 E1 FH p q mm 0.184 0.155inch b 14.27 20.45 20.19 U2U1 5.97 5.72 0.25 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w2A M MC C A w1 ABM M M q B SOT467C

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 14 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor Fig 14. Package outline SOT467B ReferencesOutline version European projection Issue date IEC JEDEC JEITA SOT467B sot467b_po 08-12-09 09-10-27 Unit(1) mm max nom min 4.67 3.94 5.59 5.33 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 18.29 17.27 2.92 2.16 9.78 9.53 A Dimensions Note 1. millimeter dimensions are derived from the original inch dimensions. Earless LDMOST ceramic package; 2 leads SOT467B bc 0.15 0.10 DD 1 EE 1 F 1.65 1.40 HL Q 2.21 1.96 U1 U2 5.97 5.72 0.25 inches max nom min 0.184 0.155 0.22 0.21 0.364 0.356 0.365 0.355 0.233 0.227 0.235 0.225 0.72 0.68 0.115 0.085 0.385 0.375 0.006 0.004 0.065 0.055 0.087 0.077 0.235 0.225 0.01 0 5 10 mm scale w2 Ab H L c Q E D D A F

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 17 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2010 Document identifier: BLF881_BLF881S_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents

Product Information

BLF881 specifications and overview.

Summary

UHF power LDMOS transistor Rev. 02-10 February 2010

Description

UHF power LDMOS transistor Rev. 02-10 February 2010

Source title BLF881 Datasheet(PDF) - NXP Semiconductors

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