BLF878 | DigiCamel IC Datasheet

Online Datasheet

Read BLF878 online.

BLF878 NXP | Alldatasheet

Document overview

Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 18

Technical content

1.1 General description

device makes it ideal for digital transmitter applications. [1] Black video signal, sync expansion: input sync = 33 %; output sync≥ 27 %. [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

1.2 Features

Table 1. Typical performance RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit. during transport and handling.

1.3 Applications

Table 2. Pinning Table 3. Ordering information

BLF878_1 © NXP B.V. 2008. All rights reserved. [1] R th(j-c) is measured under RF conditions. [2] R th(c-h) is dependent on the applied thermal compound and clamping/mounting of the device. [1] ID is the drain current. [2] Capacitance values without internal matching. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics Table 6. Characteristics Tj=2 5°C unless otherwise speciﬁed.

BLF878_1 © NXP B.V. 2008. All rights reserved. [1] IDq = 1.4 A for total device. [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. Table 7. RF performance in a common-source narrowband 860 MHz test circuit Tcase =2 5°C unless otherwise speciﬁed.

7.1 Narrowband RF ﬁgures

7.1.1 CW IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V Fig 2. CW power gain and drain efﬁciency as a function of load power; typical values PL (W) 0 400 200 300100 001aai076 G p (dB) hD (%) G p hD (2) (1) (2) (1)

BLF878_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 15 December 2008 6 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor 7.1.2 2-Tone IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V Fig 3. 2-Tone power gain and drain efﬁciency as functions of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values PL(AV) (W) 0 400 300100 200 001aai077 G p (dB) h D (%) G p hD (1) (2) (2) (1) PL(AV) (W) 0 400 300100 200 001aai078 -30 -40 -20 -10 IMD3 (dBc) -50 (1) (2)

7.1.3 DVB-T

IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V Fig 5. DVB-T power gain and drain efﬁciency as functions of average load power; typical values Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values PL(AV) (W) 0 250 200100 15050 001aai079 G p (dB) h D (%) G p hD (1) (2) (2) (1) PL(AV) (W) 0 250 200100 15050 001aai080 -35 -25 -15 IMD3 (dBc) -45 (1) (2)

7.2 Broadband RF ﬁgures

7.2.1 2-Tone PL(AV) = 150 W; IDq = 1.4 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V (2) VDS = 42 V PL(AV) = 150 W; IDq = 1.4 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V (2) VDS = 42 V Fig 7. 2-Tone power gain and drain efﬁciency as a function of frequency; typical values Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values f (MHz) 400 900 800600 700500 001aai081 G p (dB) h D (%) (1) (2) (2) (1) G p hD f (MHz) 400 900 800600 700500 001aai082 -40 -20 IMD3 (dBc) -60 (1) (2)

7.2.2 DVB-T

PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V (2) VDS = 42 V PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V (2) VDS = 42 V Fig 9. DVB-T power gain and drain efﬁciency as functions of frequency; typical values Fig 10. DVB-T third order intermodulation distortion as a function of frequency; typical values PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described inSection8. PAR of input signal = 9.5 dB at 0.01 % probability on CCDF . (1) VDS = 40 V (2) VDS = 42 V Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values f (MHz) 400 900 800600 700500 001aai083 G p (dB) h D (%) (1) (2) (2) (1) G p hD f (MHz) 400 900 800600 700500 001aai084 -40 -20 IMD3 (dBc) -60 (1) (2) f (MHz) 400 900 800600 700500 001aai085 PAR (dB) (2) (1)

7.3 Ruggedness in class-AB operation

7.4 Impedance information

Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W.

7.5 Reliability

Table 8. Typical push-pull impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W. TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)× 1 /δ.

BLF878_1 © NXP B.V. 2008. All rights reserved. [1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. thickness copper plating = 35µm. Table 9. List of components For test circuit, seeFigure14,Figure15 andFigure16.

BLF878_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 15 December 2008 13 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor See Table9 for a list of components. Fig 14. Class-AB common-source broadband ampliﬁer; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages 001aai088+ VG2(test) + VG1(test) + VD1(test) + VD2(test) C24C25 C10L4 C29 C28 C30 C31 R2 C27 C26 C14 C16 C18 C13 C12 C11R1

50 W 50 WC22

Fig 15. Printed-Circuit Board (PCB) for class-AB common source ampliﬁer 001aai089 95 mm 80 mm 95 mm L22 L23 L21 L20

BLF878_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 15 December 2008 14 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor See Table9 for a list of components. Fig 16. Component layout for class-AB common source ampliﬁer 001aai090 +VG1(test) +VG2(test) +V D1(test) +V D2(test) BLF878 mm mm mm mm 3.6 mm mm mm C16 C18 C12 C11 C4C21 C20 C22 C23 C24 B2R4R6 C27 C31 C28 C30 C26 C29 C25 C13 C15 C17 C10 C14

BLF878_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 15 December 2008 15 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor 9. Package outline Fig 17. Package outline SOT979A ReferencesOutline version European projection Issue date IEC JEDEC JEITA SOT979A sot979a_po Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A E c Q B C A e q L b U 2 H 1 U 1 H p w1 A B w2 C A D 1 D F Unit(1) mm max nom min 5.77 4.80 11.81 11.56 31.55 30.94 31.37 31.12 10.29 10.03 10.29 10.03 1.969 1.689 17.50 17.25 3.86 3.35 41.28 41.02 10.29 10.03 A Dimensions bc 0.15 0.10 DD 1 EE 1 0.51 w 2e 13.72 FH H 1 25.53 25.27 Lp 3.30 3.05 Q 3.02 2.77 q 35.56 U 1 U 2 0.25 inches max nom min 0.227 0.189 0.465 0.455 1.242 1.218 1.235 1.225 0.405 0.395 0.405 0.395 0.078 0.067 0.689 0.679 0.152 0.132 1.625 1.615 0.405 0.395 0.006 0.004 0.020 0.25 w 3 0.010 0.540 1.005 0.995 0.130 0.120 0.119 0.109 1.400 0.010 w 1 0 5 10 mm scale Note 1. millimeter dimensions are derived from the original inch dimensions. 08-04-24 08-09-04

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/proﬁle/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit:http://www.nxp.com For sales ofﬁce addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Deﬁnition Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

UHF power LDMOS transistor © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 December 2008 Document identifier: BLF878_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents

Product Information

BLF878 specifications and overview.

Summary

UHF power LDMOS transistor Rev. 01-15 December 2008

Description

UHF power LDMOS transistor Rev. 01-15 December 2008

Source title BLF878 Datasheet(PDF) - NXP Semiconductors

Related Parts

More parts from the same family.

Browse manufacturer