BLF871 | DigiCamel IC Datasheet

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Document overview

Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 18

Technical content

1.1 General description

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

1.2 Features

Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit. during transport and handling.

1.3 Applications

Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

BLF871_2 © NXP B.V. 2009. All rights reserved. [1] R th(j-c) is measured under RF conditions. [1] ID is the drain current. Table 5. Thermal characteristics Table 6. Characteristics Tj=2 5°C unless otherwise speciﬁed.

BLF871_2 © NXP B.V. 2009. All rights reserved. [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. Table 7. RF performance in a common-source narrowband 860 MHz test circuit Th =2 5°C unless otherwise speciﬁed.

7.1 Narrowband RF ﬁgures

7.1.1 CW 7.1.2 2-Tone VDS =4 0V ; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. Fig 2. CW power gain and drain efﬁciency as a function of load power; typical values 001aaj277 PL (W) 0 180 12060 G p (dB) hD (%) G p hD VDS =4 0V ; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 3. 2-Tone power gain and drain efﬁciency as functions of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values 001aaj278 PL(AV) (W) 0 120 8040 G p (dB) hD (%) G p hD PL(AV) (W) 0 120 8040 001aaj279 -40 -20 IMD3 (dBc) -60 (1) (2)

7.1.3 DVB-T

VDS =4 0V ; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 5. DVB-T power gain and drain efﬁciency as functions of average load power; typical values Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values PL(AV) (W) 06 0 4020 001aaj280 G p (dB) hD (%) G p hD 001aaj281 PL(AV) (W) 06 0 4020 −35 −45 −25 −15 IMD3 (dBc) −55 (1) (2)

7.2 Broadband RF ﬁgures

7.2.1 2-Tone IDq = 0.5 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W IDq = 0.5 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W Fig 7. 2-Tone power gain and drain efﬁciency as a function of frequency; typical values Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values f (MHz) 400 900 800600 700500 001aaj282 G p (dB) hD (dB) (2) (1) (2) (1) G p hD f (MHz) 400 900 800600 700500 001aaj283 -40 -20 IMD3 (dBc) -60 (2) (1)

7.2.2 DVB-T

IDq = 0.5 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V; PL(AV) = 22 W (2) VDS = 42 V; PL(AV) = 24 W IDq = 0.5 A; measured in a common source broadband test circuit as described inSection8. (1) VDS = 40 V; PL(AV) = 22 W (2) VDS = 42 V; PL(AV) = 24 W Fig 9. DVB-T power gain and drain efﬁciency as functions of frequency; typical values Fig 10. DVB-T third order intermodulation distortion as a function of frequency; typical values IDq = 0.5 A; measured in a common source broadband test circuit as described inSection8. PAR of input signal = 9.5 dB at 0.01 % probability on CCDF . (1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W (2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W (3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W (4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values f (MHz) 400 900 800600 700500 001aaj284 G p (dB) h D (%) (2) (1) (1) (2) G p hD f (MHz) 400 900 800600 700500 001aaj285 -40 -20 IMD3 (dBc) -60 (2) (1) f (MHz) 400 900 800600 700500 001aaj286 PAR (dB) (1) (2) (3) (4)

7.3 Ruggedness in class-AB operation

7.4 Impedance information

Table 8. Typical impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.

7.5 Reliability

Simulated Zi and ZL device impedance; impedance info at VDS = 42 V. TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)× 1 /δ.

BLF871_2 © NXP B.V. 2009. All rights reserved. [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. thickness copper plating = 35µm. Table 9. List of components For test circuit, seeFigure14,Figure15 andFigure16.

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 12 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor See Table9 for a list of components. Fig 14. Class-AB common-source broadband ampliﬁer 001aaj288 L20 L1 L2 L3 L4 L5L21L22 L23 C20 C23 C22C24 C21 C25 C850 W 50 W C27 C26 VGG VDD C10 C11 C12 C4 C5 C6 C7

BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 13 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor Fig 15. Printed-Circuit Board (PCB) for class-AB common source ampliﬁer 001aaj289 40 mm 40 mm 76.2 mm

BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 14 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor See Table9 for a list of components. Fig 16. Component layout for class-AB common source ampliﬁer 001aaj290 C26 C25 C23 C21 C20 C22 C24 L23 L23 L21 L20 L1 L2 C27 C11 C12 C4 C8 C10

BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 15 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 9. Package outline Fig 17. Package outline SOT467C REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT467C 99-12-06 99-12-28 0 5 10 mm scale Flanged LDMOST ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 D D 1 U 1 A U 2 E p b H Q F c UNIT QcD 9.27 9.02 D 1 5.92 5.77 E 5.97 5.72 E1 FH p q mm 0.184 0.155inch b 14.27 20.45 20.19 U 2U 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2A M MC C A w 1 w 2 ABM M M q B SOT467C

Table1 on page1: corrected some values
Section1.2 on page1: corrected some values
Table6 on page3: corrected some values
Table6 on page3: removed gfs speciﬁcation
Table7 on page4: corrected some values. BLF871_1 20081218 Objective data sheet - -

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/proﬁle/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit:http://www.nxp.com For sales ofﬁce addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Deﬁnition Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

UHF power LDMOS transistor © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 March 2009 Document identifier: BLF871_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents

Product Information

BLF871 specifications and overview.

Summary

UHF power LDMOS transistor Rev. 02-5 March 2009

Description

UHF power LDMOS transistor Rev. 02-5 March 2009

Source title BLF871 Datasheet(PDF) - NXP Semiconductors

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