BLF861 PHILIPS | Alldatasheet

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Preliminary specification 1999 Aug 26 DISCRETE SEMICONDUCTORS BLF861 UHF power LDMOS transistor M3D392

1999 Aug 26 2

Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861

FEATURES

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (UHF band).

APPLICATIONS

  • Communication transmitter applications in the UHF frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. PINNING - SOT540A PIN DESCRIPTION 1d r a i n 1 2d r a i n 2 3g a t e 1 4g a t e 2 5 source, connected to flange Fig.1 Simplified outline. Top view MBK777 QUICK REFERENCE DATA RF performance at Th =2 5 °C in a common source test circuit. Notes 1. Sync compression: input sync: ≥33%; output sync: 27 % LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) ∆Gp (dB) CW, class-AB 860 32 150 >14 >50 ≤1 PAL BG (TV), class-AB 860 (ch 69) 32 typ.170 (peak sync) >14 >40 note 1 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage −± 15 V ID drain current (DC) − 18 A Ptot total power dissipation T mb ≤ 25 °C − 318 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 THERMAL CHARACTERISTICS CHARACTERISTICS Tj =2 5 °C; per section; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base T mb =2 5 °C; Ptot = 318 W 0.55 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage V GS =0 ; ID =1 . 5m A 6 5 −− V VGSth gate-source threshold voltage V DS =1 0V ; ID = 150 mA 4 − 5V IDSS drain-source leakage current V GS =0 ; VDS =3 2V −− 10 µA IDSX drain cut-off current V GS =V GSth +9V ; VDS =1 0V 1 8 −− A IGSS gate leakage current V GS = ±15 V; VDS =0 −− 100 nA gfs forward transconductance V DS =1 0V ; ID =4A − 4 − S RDSon drain-source on-state resistance V GS =V GSth +9V ; ID =4A − 160 − mΩ Cis input capacitance V GS =0 ; VDS =3 2V ; f=1M H z − 84 − pF Cos output capacitance V GS =0 ; VDS =3 2V ; f=1M H z − 42 − pF Crs feedback capacitance V GS =0 ; VDS =3 2V ; f=1M H z − 6 − pF Fig.2 Output capacitance as a function of drain- source voltage; typical values per section. VGS =0 ; f=1M H z ; Tj =2 5 °C. 120 160 200 0 1 02 03 04 05 0 VDS (V) COS (pF)

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T h =2 5 °C; Rth mb-h = 0.15 K/W, unless otherwise specified. Notes 1. Sync compression: input sync: ≥33%; output sync: 27 % measured in narrowband testcircuit. Ruggedness in class-AB operation The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) dIM (dBc) ∆Gp (dB) CW, class-AB 860 32 1.15 150 >14 >50 −≤ 1 2-tone, class-AB f1 = 860 f1 = 860.1 32 1.15 150 (PEP) >14 >40 ≤−30 − PAL BG (TV), class-AB 860 (ch 69) 32 1.15 typ.170 (peak sync) >14 >40 − note 1 Fig.3 Input impedance as a function of frequency (series components); typical values per section. CW, class-AB operation; V DS =3 2V ; IDQ =1 . 1 5A ; PL = 170 W (total device) ; T h =2 5 °C. 400 500 600 700 800 900 f (MHz) Z i (Ω) ri xi Fig.4 Load impedance as a function of frequency (series components); typical values per section. CW, class-AB operation; V DS =3 2V ; IDQ =1 . 1 5A ; PL = 170 W (total device) ; T h =2 5 °C. 400 500 600 700 800 900 f (MHz) Z L (Ω) RL XL

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 Fig.5 Power gain and drain efficiency as functions of peak envelope load power; typical values. Th =2 5 °C; VDS =3 2 V ; IDQ = 1.15 A; 2-tone: f1 =8 6 0M H z (−6d B ) ; f2 =8 6 0 . 1M H z (−6d B ) measured in 860 MHz testcircuit. 0 100 200 300 P L (PEP) (W) GP (dB) η D (%) GP ηD -80 -60 -40 -20 0 100 200 300 PL (PEP) (W) dim (dB) Fig.6 Intermodulation distortion as a function of peak envelope output power; typical values. Th =2 5 °C; VDS =3 2V ; IDQ = 1.15 A; 2-tone: f1 =8 6 0M H z (−6d B ) ; f2 =8 6 0 . 1M H z (−6d B ) measured in 860 MHz testcircuit. Fig.7 Power gain and drain efficiency as functions of load power; typical values. Th =2 5 °C; VDS = 32 V; ; IDQ = 1.15 A; CW, class-AB; f = 860 MHz; measured in 860 MHz testcircuit. 0 50 100 150 200 P L (W) GP (dB) η D (%)GP ηD

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 C16 R5 8mm 4.5mm 4mm 10mm C24 L19 C10 C11 C12 C13 R7L18 C26 C25 C23C22 C21C20 C17 C19 C18 C15C14C9 C8C7C6C5C4C3C2 L12 L14 L16 L15L13 L11 L10 +Vs +Vbias L17

50 Ohm

Fig.8 Class-AB broadband testcircuit. List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 multilayer ceramic chip capacitor; note 1 20 pF C2 multilayer ceramic chip capacitor; note 1 4.3 pF C3, C6, C9 Tekelec trimmer 0.6 to 4.5 pF C4 multilayer ceramic chip capacitor; note 1 8.2 pF C5 multilayer ceramic chip capacitor; note 1 10 pF C7 multilayer ceramic chip capacitor; note 1 6.8 pF C8 multilayer ceramic chip capacitor; note 1 13 pF C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF C12 multilayer ceramic chip capacitor; note 2 3.3 pF C13 multilayer ceramic chip capacitor; note 2 6.8 pF C14 multilayer ceramic chip capacitor; note 2 1 pF C15 multilayer ceramic chip capacitor; note 2 30 pF C16, C17 multilayer ceramic chip capacitor 1 nF C18, C25 multilayer ceramic chip capacitor 100 nF C19, C26 multilayer ceramic chip capacitor 100 µF C20, C21, C22, C23 multilayer ceramic chip capacitor; note 3 100 pF

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 ( ε r = 2.2); thickness 0.79 mm. C24 electrolytic capacitor 1000 µF L1, L2 stripline; note 4 30.6 x 2.4 mm L3, L4 stripline; note 4 28 x 2.4 mm L5, L6 stripline; note 4 10 x 5 mm L7, L8 stripline; note 4 20 x 10 mm L9, L10 stripline; note 4 5.5 x 15 mm L11, L12 stripline; note 4 10 x 10 mm L13, L14 stripline; note 4 15 x 5 mm L15, L16 stripline; note 4 48.5 x 2.4 mm L17 stripline; note 4 10 x 2.4 mm L18 ferrite L19 wire inductor (hairpin) height = 8 mm length = 20 mm B1 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5 Ω 70 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5 Ω 48.5 mm R1, R7 resistor 10 Ω R2 resistor 1 k Ω R3 resistor 100 k Ω R4 resistor 100 Ω R5, R6 SMD resistor 3.9 Ω COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 80 mm 95 mm95 mm BLF861 +Vs+Vbias C6C3 R3C18 B1 B2 L19 C20 L18 R7 C17 C16 C1 C2 C19 R1 C14 C24 C26 C25 C23 C21 C22 C15C13C12 C10 C11 Fig.9 Printed-circuit board and component layout for the class-AB broadband testcircuit. Dimensions in mm. The components are situated on one side of the Rogers 5880 printed circuit board, the other side is unetched and serves as a gr ound plane. Earth connections from the component side to the ground plane are made by through metallization.

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 Fig.10 Power gain and drain efficiency as functions of frequency; typical values. Th =2 5 °C; VCE =3 2 V ; IDQ = 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit. 400 500 600 700 800 900 f (MHz) G P (dB) η D (%)GP ηD Fig.11 Peak envelope sync power as a function of frequency; typical values. Th =2 5 °C; VCE =3 2 V ; IDQ = 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit. 100 150 200 250 400 500 600 700 800 900 f (MHz) P o sync (W) Fig.12 Power gain and drain efficiency as functions of frequency; typical values. Th =2 5 °C; VDS=3 2 V ; IDQ = 1.15 A; CW class-AB; P L =1 5 0W measured in broadband testcircuit. 400 500 600 700 800 900 f (MHz) G P (dB) η D (%)GP ηD

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT540A 99-03-30 99-08-27 0 5 10 mm scale Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT540A p A F b e D U2H Q c E A w1 ABM M M q C B M Mw2 C Mw3 UNIT A mm Db 8.51 8.26 0.15 0.10 22.05 21.64 10.21 10.31 10.01 15.75 14.73 9.91 9.65 5.77 5.00 c e U2 0.250.25 0.51 27.94 qw 2w1F 1.78 1.52 34.16 33.91 18.72 18.47 p 3.38 3.12 Q 2.72 2.46 EE 1 10.26 10.06 inches 0.335 0.325 0.006 0.004 0.868 0.852 22.05 21.64 0.868 0.852 0.402 0.406 0.394 0.620 0.580 0.390 0.380 0.227 0.060 1.345 1.335 0.737 0.727 0.133 0.123 0.107 0.097 0.404 0.396 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

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Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 67 Philips Semiconductors – a worldwide company For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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