BLF6G27S-45 | DigiCamel IC Datasheet

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PDF pages: 16

Technical content

1.1 General description

45 W LDMOS power transistor for base station applications at frequencies from

0.01 % probability on CCDF . Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.

1.2 Features

Table 1. Typical performance RF performance at Tcase = 25°C in a class-AB production test circuit. during transport and handling.

1.3 Applications

2500 MHz to 2700 MHz frequency range

Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

7.1 Ruggedness in class-AB operation

Table 5. Thermal characteristics Table 6. Characteristics Tj = 25°C per section; unless otherwise speciﬁed. Table 7. Application information speciﬁed; in a class-AB production circuit.

7.2 Single carrier N-CDMA performance

VDS =2 8V ; IDq = 350 mA; f = 2600 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; instantaneous bandwidth = 30 kHz. V DS = 28 V; IDq = 350 mA; f = 2600 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; instantaneous bandwidth = 30 kHz. (1) Low frequency component (2) High frequency component Fig 1. Power gain and drain efﬁciency as functions of average load power; typical values Fig 2. Adjacent channel power ratio as function of average load power; typical values 001aah406 PL(AV) (W) 10−1 102101 G p (dB) ηD (%) G p ηD PL(AV) (W) 10-1 102101 001aah407 -60 -50 -70 -40 -30 ACPR (dBc) -80 ACPR 1980k ACPR 1500k ACPR 885k (1) (2) (1) (2) (2) (1)

7.3 Two-tone

VDS =2 8V ; f1 = 2598.75 MHz; f2 = 2601.25 MHz; 2.5 MHz tone spacing. (1) IDq = 250 mA (2) IDq = 300 mA (3) IDq = 350 mA (4) IDq = 400 mA (5) IDq = 500 mA VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz; 2.5 MHz tone spacing. (1) IDq = 250 mA (2) IDq = 300 mA (3) IDq = 350 mA (4) IDq = 400 mA (5) IDq = 500 mA Fig 3. Power gain as function of peak envelope load power; typical values Fig 4. Third order intermodulation distortion as function of peak envelope load power; typical values 001aah408 17.5 18.5 19.5 G p (dB) 16.5 PL(PEP) (W) 11 0 210 (5) (4) (3) (2) (1) 001aah409 -45 -35 -55 -25 -15 IMD3 (dBc) -65 PL(PEP) (W) 11 0 210 (1) (2) (5) (3) (4)

7.4 Continuous wave

IDq = 350 mA; f = 2600 MHz; Tcase =2 5°C; VDS =2 8V . I Dq = 350 mA; f = 2600 MHz; Tcase =2 5°C. (1) VDS = 32 V (2) VDS = 28 V (3) VDS = 24 V (4) VDS = 20 V (5) VDS = 16 V (6) VDS = 12 V Fig 5. Power gain and drain efﬁciency as functions of CW load power; typical values Fig 6. Power gain as function of CW load power; typical values 001aah410 G p (dB) η D (%) PL (W) 11 0 210 G p ηD 001aah411 G p (dB) PL(CW) (W) 11 0 210 (1) (2) (3) (4) (5) (6)

7.5 Single carrier N-CDMA broadband performance at 7 W average

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. V DS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. (1) Low frequency component (2) High frequency component Fig 7. Power gain and drain efﬁciency as functions of frequency; typical values Fig 8. Adjacent channel power ratio as function of frequency; typical values VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. Fig 9. Power gain and input return loss as functions of frequency 001aah412 f (MHz) 2500 2700 26502550 2600 G p (dB) ηD (%) G p ηD 001aah413 f (MHz) 2500 2700 26502550 2600 -60 -50 -40 ACPR (dBc) -70 ACPR 1980k ACPR 1500k ACPR 885k (1) (2) (1) (2) (1) (2) 001aah417 f (MHz) 2500 2700 26502550 2600 G p (dB) −12 RL in (dB) −16 G p RL in

7.6 Single carrier N-CDMA broadband performance at 20 W average

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. V DS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. (1) Low frequency component (2) High frequency component Fig 10. Power gain and drain efﬁciency as functions of frequency; typical values Fig 11. Adjacent channel power ratio as function of frequency; typical values 001aah414 f (MHz) 2500 2700 26502550 2600 G p (dB) ηD (%) G p ηD 001aah415 f (MHz) 2500 2700 26502550 2600 -50 -40 -30 ACPR (dBc) -60 ACPR 1980k ACPR 1500k ACPR 885k (1) (2) (1) (2) (1) (2)

BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 9 of 16 NXP Semiconductors BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor 8. Test information See Table8 for list of components. Fig 12. Test circuit for operation at 2500 MHz to 2700 MHz 001aah416 C1 C2 C14C7 C12 C13 50 Ω input 50 Ω output VGG VDD +28 V C6 C5 C10 C11

BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved. [1] American Technical Ceramics type 100B or capacitor of same quality. Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) withεr = 3.5 and thickness = 0.76 mm. See Table8 for list of components. Table 8. List of components For test circuit, seeFigure12 andFigure13.

BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 12 of 16 NXP Semiconductors BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor 9. Package outline Fig 14. Package outline SOT608A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT608A 01-02-22 02-02-11 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 2 leads SOT608A p A F b D U 2H Q c D 1 E A w 1 ABM M M C q U 1 C B M Mw 2 UNIT A mm Db 7.24 6.99 0.15 0.10 10.21 10.01 10.29 10.03 15.75 14.73 9.91 9.65 4.62 3.76 c U 2 0.25 0.5115.24 qw 2w 1F 1.14 0.89 U 1 20.45 20.19 p 3.30 2.92 Q 1.70 1.35 EE 1 10.21 10.01 inches 0.285 0.275 0.006 0.004 0.402 0.394 D 1 10.29 10.03 0.405 0.395 0.405 0.395 0.620 0.580 0.390 0.380 0.182 0.035 0.805 0.795 0.130 0.115 0.067 0.053 0.402 0.394 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 13 of 16 NXP Semiconductors BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Fig 15. Package outline SOT608B REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT608B SOT608B 06-11-27 06-12-06 UNIT A mm 4.62 3.76 7.24 6.99 0.15 0.10 10.29 10.03 10.21 10.01 10.29 10.03 1.14 0.89 1.70 1.35 10.24 9.98 0.51 b DIMENSIONS (mm dimensions are derived from the original inch dimensions) Ceramic earless flanged package; 2 leads 0 5 mm scale c D 10.21 10.01 D 1 E E 1 F H 15.75 14.73 Q U 1 U 2 10.24 9.98 inch 0.182 0.148 0.285 0.275 0.006 0.004 0.405 0.395 0.402 0.394 0.405 0.395 0.045 0.035 0.067 0.053 0.403 0.393 0.0200.402 0.394 0.620 0.580 0.403 0.393 w 1 Mw 1 AM b H A D A F D 1 U 1 E U 2 c Q

Changed the maximum junction temperature inTable4 on page2. BLF6G27-45_BLF6G27S-45_2 20080207 Preliminary data sheet - BLF6G27-45_BLF6G27S-45_1 BLF6G27-45_BLF6G27S-45_1 20080129 Preliminary data sheet - -

BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 15 of 16 NXP Semiconductors BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor 12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/proﬁle/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit:http://www.nxp.com For sales ofﬁce addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Deﬁnition Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 December 2008 Document identifier: BLF6G27-45_BLF6G27S-45_3 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents

7.5 Single carrier N-CDMA broadband per

7.6 Single carrier N-CDMA broadband

Product Information

BLF6G27S-45 specifications and overview.

Summary

WiMAX power LDMOS transistor Rev. 03-15 December 2008

Description

WiMAX power LDMOS transistor Rev. 03-15 December 2008

Source title BLF6G27S-45 Datasheet(PDF) - NXP Semiconductors

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