BLF6G10LS-260PRN

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Technical content

1.1 General description

260 W LDMOS power transistor for base station applications at frequencies from

1.2 Features and benefits

Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. during transport and handling.

1.3 Applications

Table 2. Pinning Table 3. Ordering information

Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics Table 6. Characteristics Tj = 25 C; values per section unless otherwise specified. Table 7. 2-carrier W-CDMA Application information VDS =2 8V ; IDq = 1800 mA; Tcase =2 5 C; unless otherwise specified.

7.1 Ruggedness in class-AB operation

7.2 Impedance information

[1] Z S and ZL defined in Figure 1. Table 8. 1 carrier W-CDMA Application information VDS =2 8V ; IDq = 1800 mA; Tcase =2 5 C; unless otherwise specified. Table 9. Typical impedance per section

Product data sheet Rev. 2 — 12 July 2013 5 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor

7.3 Typical powersweep

7.3.1 CW (1) % efficiency at 960 MHz (2) % efficiency at 940 MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz Fig 2. Typical continuous wave 1 (gain; efficiency versus PO) (1) dB return loss at 940 MHz (2) dB return loss at 920 MHz (3) dB return loss at 960 MHz Fig 3. Typical continuous wave 2 (return loss versus P O) PL (W) 0 400 300100 200 014aab123 Gp (dB) ηD (%) (1) (2) (3) (4) (5) (6) PL (W) 35025050 300 2001000 150 014aab126 RLin (dB) (2) (1) (3)

Product data sheet Rev. 2 — 12 July 2013 6 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor

7.3.2 IS95

(1) % efficiency at 960 MHz (2) % efficiency at 940 MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz (1) 885 kHz ACPR1, dBc at 960 MHz (2) 885 kHz ACPR1, dBc at 940 MHz (3) 885 kHz ACPR1, dBc at 920 MHz (4) PAR, dB at 940 MHz (5) PAR, dB at 920 MHz (6) PAR, dB at 960 MHz (7) 1980 kHz ACPR2, dBc at 940 MHz (8) 1980 kHz ACPR2, dBc 920 MHz (9) 1980 kHz ACPR2, dBc at 960 MHz a. Gain and efficiency versus P O b. ACPR1, ACPR2 and PAR versus P O IS95, PAR = 9.8 dB at 0.01% probability of the CCDF. Fig 4. Typical IS95 (gain; efficiency; ACPR1, ACPR2 and PAR versus P O) PL (AV) 0 150 10050 014aab124 20.5 22.5 24.5 G p (dB) ηD (%) 18.5 (4) (5) (6) (1) (2) (3) PL (AV) 0 160 12040 80 014aab127 −60 −50 −70 −40 −30 ACPR1, ACPR2 (dBc) PAR (dB) −80 (1) (2) (3) (9) (8) (7) (5) (6) (4)

Product data sheet Rev. 2 — 12 July 2013 7 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor 7.3.3 2C-WCDMA (5 MHz spacing) (1) % efficiency at 960 MHz (2) % efficiency at 940 MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz (1) 5 MHz ACPR1, dBc at 960 MHz (2) 5 MHz ACPR1, dBc at 940 MHz (3) 5 MHz ACPR1, dBc at 920 MHz (4) PAR, dB at 920 MHz (5) PAR, dB at 940 MHz (6) PAR, dB at 960 MHz (7) 10 MHz ACPR2, dBc at 940 MHz (8) 10 MHz ACPR2, dBc 920 MHz (9) 10 MHz ACPR2, dBc at 960 MHz a. Gain and efficiency versus P O b. ACPR1, ACPR2 and PAR versus P O 3GPP, Test Model 1, 64 DPCH, PAR=7.5 dB at 0.01% probability per carrier. 5 MHz carrier spacing. Fig 5. Typical 2C-WCDMA (gain; efficien cy; ACPR1, ACPR2 and PAR versus PO) PL (AV) 0 150 10050 014aab122 20.5 22.5 24.5 G p (dB) 18.5 η D (%) (6) (5) (4) (1) (2) (3) 014aab125 PL (AV) 0 150 10050 −44 −36 −52 −28 −20 ACPR1, ACPR2 (dBc) −60 PAR (dB) (1) (2) (3) (9) (8) (7) (6) (5) (4)

8.1 Test circuit

provide a more appropriate application demonstration for specific customer needs. Table 10. Bill of materials

Table 10. Bill of materials …continued

Product data sheet Rev. 2 — 12 July 2013 10 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor 9. Package outline Fig 7. Package outline SOT539A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT539A 12-05-02 10-02-02 0 5 10 mm scale p A F b e D L H Q c E A w1 ABM M M q C B M Mw2 C Mw3 UNIT A mm Db 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e U2 0.250.25 0.51 35.56 qw 2w1F 1.75 1.50 41.28 41.02 25.53 25.27 p 3.30 3.05 Q 2.26 2.01 EE 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 H 3.48 2.97 0.137 0.117 L DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

Product data sheet Rev. 2 — 12 July 2013 11 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor Fig 8. Package outline SOT539B ReferencesOutline version European projection Issue date IEC JEDEC JEITA SOT539B sot539b_po 12-05-02 13-05-24 Unit(1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 A Dimensions Earless flanged balanced ceramic package; 4 leads SOT539B bc 0.18 0.10 DD

1 EE 1 e

13.72 FH H 1 25.53 25.27 LQ 2.26 2.01 U 32.39 32.13 U 2 w2 0.25 inches max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 0 5 10 mm scale c E Q e H L b Dw2 1 2 3 4 D D A F Note 1. millimeter dimensions are derived from the original inch dimensions.

Table 11. Abbreviations Table 12. Revision history Modifications: • The package outline Figure 8 is updated.

• Translation disclaimer added to the legal text. BLF6G10L-260PRN_LS-260PRN v.1 20100812 Product data sheet - -

Product data sheet Rev. 2 — 12 July 2013 13 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor 12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 12 July 2013 14 of 15 NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLF6G10L(S)-260PRN Power LDMOS transistor © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 July 2013 Document identifier: BLF6G10L-260PRN_LS-260PRN Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents