DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
1.2 Features and benefits
Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit.
1.3 Applications
[1] R th(j-c) is measured under RF conditions. Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics
7.1 Ruggedness in class-AB operation
Table 6. Characteristics per section Tj = 25 C; unless otherwise specified. Table 7. RF performance in a common-source class-AB circuit
Product data sheet Rev. 2 — 22 July 2011 4 of 12 NXP Semiconductors BLF642 Broadband power LDMOS transistor 8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW VDS = 32 V; IDq = 200 mA; f = 1300 MHz. VDS = 32 V; f = 1300 MHz. (1) I Dq = 50 mA (2) I Dq = 100 mA (3) I Dq = 150 mA (4) I Dq = 200 mA (5) I Dq = 250 mA (6) I Dq = 300 mA (7) I Dq = 350 mA Fig 1. Power gain and drain efficiency as function of load power; typical values Fig 2. Power gain as a function of load power; typical values PL (W) 05 0 4020 3010 001aan775 ηD (%) ηD18 GP (dB) GP PL (W) 05 04020 3010 001aan776 (1) (2) (3) (4) (5) (6) (7) GP (dB)
Product data sheet Rev. 2 — 22 July 2011 5 of 12 NXP Semiconductors BLF642 Broadband power LDMOS transistor 8.1.2 2-Tone CW
8.1.3 Pulsed CW
VDS = 32 V; IDq = 200 mA; f = 1300 MHz; carrier spacing = 100 kHz. VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz. (1) I Dq = 50 mA (2) I Dq = 100 mA (3) I Dq = 150 mA (4) I Dq = 200 mA (5) I Dq = 250 mA (6) I Dq = 300 mA (7) I Dq = 350 mA Fig 3. Power gain and drain efficiency as function of average load power; typical values Fig 4. Third order intermodulation distortion as a function of average load power; typical values 001aan777 PL(AV) (W) 03 0 2010 GP (dB) ηD (%) ηD GP PL(AV) (W) 03 0 2010 001aan778 -40 -20 IMD3 (dBc) -60 (7) (6) (5) (4) (3) (2) (1) VDS = 32 V; IDq = 200 mA; f = 1300 MHz Fig 5. Power gain and drain efficiency as a function of average power; typical values PL (W) 05 0 4020 3010 001aao319 Gp (dB) Gp ηD (%) ηD
Product data sheet Rev. 2 — 22 July 2011 6 of 12 NXP Semiconductors BLF642 Broadband power LDMOS transistor
8.1.4 DVB-T
8.2 Test circuit
VDS = 32 V; IDq = 200 mA; f = 1300 MHz. VDS = 32 V; IDq = 200 mA; f = 1300 MHz. Fig 6. Power gain and drain efficiency as function of average load power; typical values Fig 7. PAR and IMD shldr as function of average load power; typical values PL(AV) (W) 02 5 2010 155 001aao321 G p (dB) ηD (%) ηD Gp PL(AV) (W) 02 5 2010 155 001aao320 -40 -20 IMDshldr (dBc) PAR (dB) -60 IMDshldr PAR See Table 8 for a list of components. Fig 8. Component layout for class-AB amplifier 001aao322 C11 C18 C20 C13 C14 C15 C16 C17 C12 C19 BLF642 28.4 mm 40 mm 5.9 mm 6 mm 10.3 mm 24.4 mm 37.7 mm
[1] American Technical Ce ramics type 100B or capacitor of same quality. [2] American Technical Ce ramics type 100A or capacitor of same quality. [3] TDK C570X7R1H106KT000N or capacitor of same quality. Table 8. List of components For production test circuit, see Figure 8 . metallization); thickness copper plating = 35 m.
Product data sheet Rev. 2 — 22 July 2011 8 of 12 NXP Semiconductors BLF642 Broadband power LDMOS transistor 9. Package outline Fig 9. Package outline SOT467C REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT467C 99-12-06 99-12-28 0 5 10 mm scale Flanged LDMOST ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 D A U2 E p b H Q F c UNIT QcD 9.27 9.02 5.92 5.77 E 5.97 5.72 E1 FH p q mm 0.184 0.155inch b 14.27 20.45 20.19 U2U1 5.97 5.72 0.25 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w2A M MC C A w1 ABM M M q B SOT467C
Table 9. Abbreviations Table 10. Revision history
- The status of this data sheet has been changed to Product data sheet
- Table 5 on page 2: The value for Rth(j-c) has been changed.
- Table 6 on page 3: Some values have been changed.
- Section 8.1.3 on page 5: Section has been added.
- Section 8.1.4 on page 6: Section has been added.
- Section 8.2 on page 6: Section has been added. BLF642 v.1 20110308 Objective data sheet - -
Product data sheet Rev. 2 — 22 July 2011 10 of 12 NXP Semiconductors BLF642 Broadband power LDMOS transistor 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 2 — 22 July 2011 11 of 12 NXP Semiconductors BLF642 Broadband power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
12.4 Licenses
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties.
Broadband power LDMOS transistor © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 July 2011 Document identifier: BLF642 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents