BLF571_15 PHILIPS | Alldatasheet
Document overview
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Technical content
1.1 General description
1.2 Features
1.3 Applications
Table 1. Production test performance during transport and handling.
BLF571_2 © NXP B.V. 2009. All rights reserved. Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics
BLF571_2 © NXP B.V. 2009. All rights reserved. Table 6. DC characteristics Tj = 25°C unless otherwise specified. Table 7. RF characteristics unless otherwise specified; in a class-AB production test circuit.
BLF571_2 © NXP B.V. 2009. All rights reserved.
6.1 Ruggedness in class-AB operation
7.1 Impedance information
Table 8. Typical impedance Simulated ZS and ZL test circuit impedances.
BLF571_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 5 of 13 NXP Semiconductors BLF571 HF / VHF power LDMOS transistor
7.2 Reliability
TTF (0.1 % failure fraction). (1) Tj = 100°C (2) Tj = 110°C (3) Tj = 120°C (4) Tj = 130°C (5) Tj = 140°C (6) Tj = 150°C (7) Tj = 160°C (8) Tj = 170°C (9) Tj = 180°C (10) Tj = 190°C (11) Tj = 200°C Fig 3. BLF571 electromigration 001aaj173 102 104 103 105 Y ears IDS(DC) (A) 0 1.61.20.80.4
BLF571_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 6 of 13 NXP Semiconductors BLF571 HF / VHF power LDMOS transistor 8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW VDS = 50 V; IDq = 50 mA; f = 225 MHz. V DS = 50 V; f = 225 MHz. (1) IDq = 20 mA (2) IDq = 40 mA (3) IDq = 50 mA (4) IDq = 60 mA (5) IDq = 80 mA Fig 4. Power gain and drain efficiency as function of load power; typical values Fig 5. Power gain as a function of load power; typical values 001aaj174 PL (W) 03 0 2010 25 155 G p (dB) hD (%) G p hD 001aaj175 PL (W) 03 0 2010 25 155 G p (dB) (4) (3) (2) (1) (5)
BLF571_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 7 of 13 NXP Semiconductors BLF571 HF / VHF power LDMOS transistor 8.1.2 2-Tone CW VDS = 50 V; IDq = 50 mA; f = 225 MHz. (1) PL(1dB) = 43.3 dBm (21.4 W) (2) PL(3dB) = 44 dBm (25.1 W) Fig 6. Load power as function of input power; typical values Pi (dBm) 13 21 1915 17 001aaj176 PL (dBm) (1) (2) ideal PL PL VDS = 50 V; IDq = 50 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 20 mA (2) IDq = 40 mA (3) IDq = 50 mA (4) IDq = 60 mA (5) IDq = 80 mA Fig 7. Power gain and drain efficiency as function of peak envelope load power; typical values Fig 8. Third order intermodulation distortion as a function of peak envelope load power; typical values 001aaj177 PL(PEP) (W) 03 0 2010 G p (dB) hD (%) G p hD PL(PEP) (W) 03 0 2010 001aaj178 -40 -20 IMD3 (dBc) -60 (2) (3) (4) (5) (1)
BLF571_2 © NXP B.V. 2009. All rights reserved.
8.2 Test circuit
[1] American Technical Ceramics type 100B or capacitor of same quality. thickness copper plating = 35µm. Table 9. List of components All capacitors should be soldered vertically. For test circuit, seeFigure9 andFigure10.
BLF571_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 9 of 13 NXP Semiconductors BLF571 HF / VHF power LDMOS transistor Fig 9. Class-AB common-source production test circuit input 50 Ω C14 output 50 Ω VGG L13 L11 L12C6C5 L10 L2 L17L16 L4 L20L19 L5L8L7 L1 L9 L18 L21L6 L14 C11 VDD 001aaj179 L15C4C3C2 C12 C13C10 Fig 10. Component layout for class-AB production test circuit 001aaj180 C11 C9C7 C10 C12C6C5C4C2 C3 C13 C14 L3R1 L4L2L1 L5 9 mm NXP BLF571 225 MHz INPUT PCB REV1 NXP BLF571 225 MHz OUTPUT PCB REV2 5.5 mm 6.5 mm 5 mm3 mm
BLF571_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 10 of 13 NXP Semiconductors BLF571 HF / VHF power LDMOS transistor 9. Package outline Fig 11. Package outline SOT467C REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT467C 99-12-06 99-12-28 0 5 10 mm scale Flanged LDMOST ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 D D 1 U 1 A U 2 E p b H Q F c UNIT QcD 9.27 9.02 D 1 5.92 5.77 E 5.97 5.72 E1 FH p q mm 0.184 0.155inch b 14.27 20.45 20.19 U 2U 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2A M MC C A w 1 w 2 ABM M M q B SOT467C
BLF571_2 © NXP B.V. 2009. All rights reserved. Table 10. Abbreviations Table 11. Revision history
- Data sheet status updated from Preliminary to Product BLF571_1 20081211 Preliminary data sheet - -
BLF571_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 February 2009 12 of 13 NXP Semiconductors BLF571 HF / VHF power LDMOS transistor 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
HF / VHF power LDMOS transistor © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 February 2009 Document identifier: BLF571_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents