BLF545

BLF545 PHILIPS | Alldatasheet

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Technical content

Product specification October 1992 DISCRETE SEMICONDUCTORS BLF545 UHF push-pull power MOS transistor

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability
• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT268 PIN DESCRIPTION 1 drain 1 2 gate 1 3 gate 2 4 drain 2 5 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. handbook, halfpage MAM395 Top view d g s d g QUICK REFERENCE DATA RF performance at Th = 25°C in a push-pull common source circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G P (dB) ηD (%) CW, class-B 500 28 40 > 11 > 50

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 3.5 A Ptot total power dissipation up to T mb =2 5°C; total device; both sections equally loaded − 92 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded

1.9 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded

0.25 K/W

Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb =2 5°C. Total device; both sections equally loaded. handbook, halfpage 11 0 MRA995 102 102 (1) ID (A) VDS (V) (2) Fig.3 Power/temperature derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. Total device; both sections equally loaded. handbook, halfpage (1) (2) 40 80 Ptot (W) 160 120 120 MBK463 Th ( °C)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 CHARACTERISTICS (per section) Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 mA 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 1m A IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage ID = 40 mA; VDS = 10 V 1 − 4V gfs forward transconductance I D = 1.2 A; VDS = 10 V 600 900 − mS R DS(on) drain-source on-state resistance ID = 1.2 A; VGS = 10 V − 0.85 1.25 Ω IDSX on-state drain current V GS = 15 V; VDS = 10 V − 4.8 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 32 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 24 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 6.4 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS = 10 V. handbook, halfpage4 MDA504 ID (A) T.C (mV/K) 11 010−2 10−1 Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS = 10 V; Tj= 25°C. handbook, halfpage VGS (V) ID (A) 10 20 15 MDA505

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 1.2 A; VGS = 10 V. handbook, halfpage 05 0 R DSon (Ω ) 100 150 1.6 1.2 0.8 0.4 MDA506 Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 VDS (V) C (pF) 20 30 100 MDA507 C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 3 0 MDA508 C rs (pF) VDS (V)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h= 0.25 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) CW, class-B 500 28 2 × 40 40 > 11 typ. 13 > 50 typ. 60 Ruggedness in class-B operation The BLF545 is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: V DS = 28 V; f = 500 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 40 mA; ZL = 4.2+ j6.2Ω (per section); f = 500 MHz. handbook, halfpage 06 0 G p (dB) MBK464 PL (W) G p ηD ηD (%) Fig.10 Load power as a function of input power, typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 40 mA; ZL = 4.2+ j6.2Ω (per section); f = 500 MHz. handbook, halfpage PL (W) PIN (W) 648 MBK465

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 Fig.11 Test circuit for class-B operation. f = 500 MHz. handbook, full pagewidth MBK461 D.U.T. BLF545 R3 L13 L16 R8 L12 R9 L17 C10 L4 L8L6 L5 L7 L9 +VD C6 C7C5 C14 C16 C12 C13 +VD +VG C18 C17 50 Ω input C11 /,/,/, /,/,/, /,/,/, L10 L14 L20L18 L24 L26 L22 L25 L11 L15 L21L19 L23 C19 C20 C21 C22C15 50 Ω output /,/,/, /,/,/, C23 C24 /,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/,

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 List of components (class-B test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor (note 1) 5.1 pF C3, C4 multilayer ceramic chip capacitor (note 1) 16 pF C5, C7, C20, C22 film dielectric trimmer 1.8 to 10 pF 2222 809 05002 C6 multilayer ceramic chip capacitor (note 1) 22 pF C8, C11, C12, C18 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9, C10, C14, C16 multilayer ceramic chip capacitor (note 1) 390 pF C13, C17 electrolytic capacitor 10 µF, 63 V C15 multilayer ceramic chip capacitor (note 1) 18 pF C19 multilayer ceramic chip capacitor (note 1) 13 pF C21 multilayer ceramic chip capacitor (note 1) 6.2 pF C23, C24 multilayer ceramic chip capacitor (note 1) 10 pF L1, L3, L24, L26 stripline (note 2) 50 Ω 56 × 2.4 mm L2, L25 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm ext. conductor length 56 mm L4, L5 stripline (note 2) 56 Ω 13.4× 2 mm L6, L7 stripline (notes 2 and 4) 56 Ω 9.6× 2 mm L8, L9 stripline (note 2) 42 Ω 9 × 3 mm L10, L11 stripline (note 2) 42 Ω 6 × 3 mm L12, L17 grade 3B Ferroxcube RF choke 4312 020 36642 L13, L16 4 turns enamelled 1.2 mm copper wire 62 nH length 7.6 mm int. dia. 5 mm leads 2× 5 mm L14, L15 stripline (note 2) 56 Ω 8 × 2 mm L18, L19 stripline (note 2) 56 Ω 13 × 2 mm L20, L21 stripline (note 2) 56 Ω 18 × 2 mm L22, L23 stripline (note 2) 56 Ω 14 × 2 mm R1 0.4 W metal film resistor 5.11 Ω 2322 151 75118 R2, R5 10 turns cermet potentiometer 50 k Ω R3, R4 0.4 W metal film resistor 10 k Ω 2322 151 71003 R6, R7 0.4 W metal film resistor 205 k Ω 2322 151 72054 R8, R9 1 W metal film resistor 10 Ω 2322 151 71009

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness1⁄32 inch. 3. Semi-rigid cables L2 and L25 are soldered on to striplines L1 and L26. 4. Striplines L6 and L7 are used in series with a 42Ω stripline (11× 3 mm). Fig.12 Component layout for 500 MHz class-B test circuit. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. handbook, full pagewidth MBK462 C3C1 C4 C5 C10 C12 C18C11 C16 C15 R7 R8 R9 R6 R13 R17 +VD +VD C8 C14 L12 L13 L11 L10 L14 C19 C20 C21, C22 L21 L20 L23 L22 L26 C23 C24L15 L18 L19 L16 L17 L1 + L2 L24 + L25 82 103 mounting screw mounting screw rivet strap straps

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 Fig.13 Input impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 40 mA; PL = 40 W. handbook, halfpage ri xi 200 400 600 −10 −15 MDA509 Zi (Ω ) f (MHz) Fig.14 Load impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 40 mA; PL = 40 W. handbook, halfpage R L XL 200 400 600 MDA510 ZL (Ω ) f (MHz) Fig.15 Power gain as a function of frequency, typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 40 mA; PL = 40 W. handbook, halfpage 200 G p (dB) f (MHz) 400 600 MDA529

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT268A 97-06-28 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A D U 1 H 1 A U 2H EP b Q F c M C A w 3 M Cw 2 e q B w 1 ABM UNIT A mm Db 1.66 1.39 0.13 0.07 12.96 12.44 6.45 17.02 16.00 6.61 6.35 4.91 4.19 c EU 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 2.04 1.77 U 1 24.90 24.63 H 1 8.23 7.72 p 3.43 3.17 Q 2.67 2.41 e 6.48 6.22 inches 0.065 0.055 0.005 0.003 0.510 0.490 0.254 0.670 0.630 0.260 0.250 0.193 0.070 0.980 0.970 0.324 0.304 0.135 0.125 0.105 0.095 0.255 0.245 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.